JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Power management Dual-transistors
UMZ1N
DUAL TRANSISTOR (NPN+PNP)
SOT-363
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
2SA1037AK and 2SC2412K are housed independently
in a package
z
Transistor elements independent, eliminating interference
Mounting cost and area can be cut in half
z
z
MARKING: Z1
Z1
TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted
Symbol
Parameter
Value
Unit
VCBO
Collector- Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
0.15
A
PC
Collector Power Dissipation
0.15
W
TJ,Tstg
Operation Junction and
Storage Temperature Range
-55~+150
℃
TR2 MAXIMUM RATINGS Ta=25℃ unless otherwise noted
Symbol
Parameter
Value
Unit
VCBO
Collector- Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-0.15
A
PC
Collector Power Dissipation
0.15
W
TJ,Tstg
Operation Junction and
Storage Temperature Range
-55~+150
℃
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1
Rev. - 2.0
TR1 NPN ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=1mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
120
560
0.4
IC=50mA,IB=5mA
VCE=12V,IC=2mA,f=100MHz
180
VCB=12V,IE=0,f=1MHz
2.0
V
MHz
3.5
pF
Max
Unit
TR1 PNP ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-1mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
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VCE(sat)
fT
Cob
120
560
IC=-50mA,IB=-5mA
VCE=-12V,IC=-2mA,f=100MHz
VCB=-12V,IE=0,f=1MHz
2
-0.5
140
V
MHz
5
pF
Rev. - 2.0
SOT-363 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.100
0.150
2.000
2.200
1.150
1.350
2.150
2.400
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.004
0.006
0.079
0.087
0.045
0.053
0.085
0.094
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
SOT-363 Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
3
Rev. - 2.0
SOT-363 Tape and Reel
www.jscj-elec.com
4
Rev. - 2.0
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