RU1H190R

RU1H190R N-Channel Advanced Power MOSFET MOSFET Features • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Pin Description TO-220 TO-220F TO-263 TO-247 Applications • Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 100 ±25 175 -55 to 175 TC=25°C 190 ① ② Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 720 A A 190 Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 120 250 125 ② W °C/W 0.55 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 1240 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 www.ruichips.com RU1H190R Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU1H190R Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 100V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=80A 100 1 30 2 3 4 ±100 5 6.5 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=80 A, VGS=0V ISD=80A, dlSD/dt=100A/µs 89 175 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz VDD=30V, RL=30Ω, IDS=80A, VGEN= 10V, RG=6Ω 1.2 6500 940 650 29 38 80 125 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=80V, VGS= 10V, IDS=80A 158 35 52 208 nC Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.. Limited by TJmax, IAS =65A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 2 www.ruichips.com RU1H190R Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 3 Normalized Effective Transient Square Wave Pulse Duration (sec) ID - Drain Current (A) www.ruichips.com RU1H190R Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 RDS(ON) - On - Resistance (m) www.ruichips.com RU1H190R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU1H190R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 6 www.ruichips.com RU1H190R Ordering and Marking Information RU1H190 Package (Available) R : TO-220; S: TO-263 ; P: TO-220F Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 7 www.ruichips.com RU1H190R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 8 www.ruichips.com RU1H190R TO-263-2L SYMBOL A A1 A2 b b1 c C1 D E e H MM MIN 4.40 0 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.57 0.10 2.69 8.70 10.16 2.54BSC 15.10 15.50 0.579 MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 MIN 0.173 0 0.102 0.030 0.048 0.013 0.048 0.338 0.394 INCH NOM 0.180 0.004 0.106 0.343 0.4 0.1BSC 0.594 0.610 MAX 0.185 0.010 0.110 0.035 0.052 0.019 0.052 0.346 0.404 SYMBOL L L3 L1 L4 L2 MIN 2.00 1.17 - MM NOM 2.30 1.27 0.25BSC 2.50REF. 0° 5° 1° 0.05 1.40 7° 3° 0.10 1.50 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 MAX 2.60 1.40 1.70 MIN 0.079 0.046 - INCH NOM 0.090 0.050 0.01BSC 0.098REF. 7° 3° 0.004 0.059 8° 9° 5° 0.008 0.063 MAX 0.102 0.055 0.067 θ θ1 θ2 DEP Øp1 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 9 www.ruichips.com RU1H190R TO-220F-3L SYMBOL E A A1 A2 A3 A4 c D Q H1 e Øp L D1 Øp1 Øp2 MM MIN 9.96 4.50 2.34 0.95 0.42 2.65 15.67 8.80 6.48 12.78 8.99 1.40 1.15 NOM 10.16 4.70 2.54 1.05 0.52 2.75 0.50 15.87 9.00 6.68 2.54BSC 3.183 12.98 9.19 1.50 1.20 13.18 9.39 1.60 1.25 0.503 0.354 0.055 0.045 MAX 10.36 4.90 2.74 1.15 0.62 2.85 16.07 9.20 6.88 MIN 0.392 0.177 0.092 0.037 0.017 0.104 0.617 0.346 0.255 INCH NOM 0.400 0.185 0.100 0.041 0.020 0.108 0.020 0.625 0.354 0.263 0.1BSC 0.125 0.511 0.362 0.059 0.047 0.519 0.370 0.063 0.049 MAX 0.408 0.193 0.108 0.045 0.024 0.112 0.633 0.362 0.271 SYMBOL Øp3 MIN 5° 0.05 1.90 13.61 3.20 3.25 5.90 6.90 1.17 0.77 1.10 9.8 0.75 MM NOM 3.450 7° 45° 0.10 2.00 13.81 3.30 3.45 6.00 7.00 1.20 0.8 1.30 10.00 0.8 MAX 9° 0.15 2.10 14.01 3.40 3.65 6.10 7.10 1.24 0.85 1.50 10.20 0.85 MIN 5° 0.002 0.075 0.536 0.126 0.128 0.232 0.272 0.046 0.030 0.043 0.386 0.030 INCH NOM 0.136 7° 45° 0.004 0.079 0.544 0.130 0.136 0.236 0.276 0.047 0.031 0.051 0.394 0.031 MAX 9° 0.006 0.083 0.552 0.134 0.144 0.240 0.280 0.048 0.033 0.059 0.412 0.033 θ1 θ2 DEP F1 F2 F3 G G1 G2 b1 b2 b3 E1 K1 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 10 www.ruichips.com RU1H190R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 11 www.ruichips.com