RU1HC2H

RU1HC2H Complementary Advanced Power MOSFET MOSFET Features • N-Channel 100V/3.5A, RDS (ON) =75mΩ (Type) @ VGS=10V RDS (ON) =80mΩ (Type) @ VGS=4.5V • P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Type) @ VGS=-10V RDS (ON) =175mΩ (Type) @ VGS=-4.5V • Reliable and Rugged • ESD Protected • Lead Free and Green Available Pin Description SOP-8 Applications • Power Management in Notebook Computer. Complementary MOSFET Absolute Maximum Ratings Symbol Parameter N -Channel 100 ±20 150 -55 to 150 3.5 ① P Channel -100 ±20 150 -55 to 150 -2.5 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C V °C °C A Mounted on Large Heat Sink I DP ID 300μs Pulse Drain Current Tested TC=25°C Continuous Drain Current TC=25°C TC=70°C PD RθJA ② 14 -10 A A 3.5 2.9 2 1.3 62.5 -2.5 -2 Maximum Power Dissipation TC=25°C TC=70°C W °C/W Thermal Resistance-Junction to Ambient Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 www.ruichips.com RU1HC2H Electrical Characteristics Symbol Static Characteristics BVDSS VGS=0V,IDS=250µA Drain-Source Breakdown Voltage VGS=0V,IDS=-250µA VDS=100V, V GS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VDS=-100V, V GS=0V TJ=85°C VGS(th) IGSS Gate Threshold Voltage VDS=VGS,IDS=250µA VDS=VGS,IDS=-250µA VGS=±20V, VDS=0V VGS=±20V, VDS=0V VGS=10V, IDS=2A N RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU1HC2H Min. Typ. Max. Parameter Test Condition Unit N P N P N P N P 100 -100 1 30 -1 -30 1.5 -1.5 2 -2 2.7 -2.7 ±10 ±10 75 80 155 85 95 170 195 V µA V µA µA Gate Leakage Current VGS=4.5V, IDS=1.5A Drain-Source On-state Resistance VGS=-10V, IDS=-2A P VGS=-4.5V, IDS=-1.5A mΩ 175 Diode Characteristics VSD ③ ISD=1A, VGS=0V Diode Forward Voltage ISD=-1A, VGS=0V N-Channel ISD=3.5A, dlSD/dt=100A/µs P-Channel ISD=-2.5A, dlSD/dt=100A/µs N P N P N P 42 1.2 -1.2 V V trr Reverse Recovery Time ns 52 43 nC 75 Qrr Reverse Recovery Charge Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 2 www.ruichips.com RU1HC2H Electrical Characteristics Dynamic Characteristics Ciss Coss Crss td(ON) tr td(OFF) tf ④ (TA=25°C Unless Otherwise Noted) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ N-Channel VGS=0V, VDS=50V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-50V, Frequency=1.0MHz N-Channel VDD=50V, RL=30Ω, IDS=3.5A, VGEN= 10V, RG=6Ω P-Channel VDD=-50V, RL=30Ω, IDS=-2.5A, VGEN= -10V, RG=6Ω N P N P N P N P N P N P N P 1520 1630 134 191 62 83 12 16 24 28 34 45 18 24 ns pF Gate Charge Characteristics Qg Qgs Total Gate Charge Gate-Source Charge N-Channel VDS=80V, VGS= 10V, IDS=3.5A P-Channel VDS=-80V, VGS= -10V, IDS=-2.5A N P N P N P 18 23 4 7 5 6 nC Qgd Gate-Drain Charge Notes: Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 3 www.ruichips.com RU1HC2H Typical Characteristics（N-Channel） Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 4 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU1HC2H Typical Characteristics(N-Channel) Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 5 Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU1HC2H Typical Characteristics(N-Channel) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 6 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU1HC2H Typical Characteristics(P-Channel) Power Dissipation Drain Current Tj - Junction Temperature (°C) -ID - Drain Current (A) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 7 Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 -ID - Drain Current (A) www.ruichips.com RU1HC2H Typical Characteristics(P-Channel) Output Characteristics Drain-Source On Resistance -VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage -VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 8 Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU1HC2H Typical Characteristics(P-Channel) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) -IS - Source Current (A) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge -VDS - Drain-Source Voltage (V) -VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 9 www.ruichips.com RU1HC2H Ordering and Marking Information RU1HC2 Package (Available) H : SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 10 www.ruichips.com RU1HC2H Package Information SOP-8 SYMBOL A A1 A2 b c D MM MIN 1.350 0.100 1.350 0.330 0.170 4.700 MAX 1.750 0.250 1.550 0.510 0.250 5.100 MIN INCH MAX 0.069 0.010 0.061 0.020 0.010 0.200 SYMBOL E E1 e L θ MIN 3.800 5.800 0.400 0° 0.053 0.004 0.053 0.013 0.006 0.185 MM MAX 4.000 6.200 1.270 8° INCH MIN 0.150 0.228 0.016 0° MAX 0.157 0.244 0.050 8° 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 11 www.ruichips.com RU1HC2H Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011 12 www.ruichips.com