RU2060L

RU2060L N-Channel Advanced Power MOSFET Features Pin Description • 20V/55A, D RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V RDS (ON) =4.5mΩ(Typ.)@VGS=2.5V • Low On-Resistance • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S TO252 Applications D • Switching Application Systems G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 55 A TC=25°C 200 A TC=25°C 55 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation IDP RqJC Thermal Resistance-Junction to Case RqJA Thermal Resistance-Junction to Ambient TC=100°C TC=25°C 50 TC=100°C 25 A W 3 °C/W 100 °C/W 49 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2019 1 www.ruichips.com RU2060L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2060L Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) VGS=0V, IDS=250µA V VDS=20V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±12V, VDS=0V Drain-Source On-state Resistance 20 30 0.4 µA 1 V ±100 nA VGS=4.5V, IDS=55A 3.5 4.5 mΩ VGS=2.5V, IDS=45A 4.5 6 mΩ 1.2 V Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=55A, VGS=0V ISD=55A, dlSD/dt=100A/µs 27 ns 13 nC Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.8 Ciss Input Capacitance VGS=0V, 790 Coss Output Capacitance 195 Crss Reverse Transfer Capacitance VDS=10V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time VDD=10V,IDS=55A, 8 td(OFF) Turn-off Delay Time VGEN=4.5V,RG=0.5Ω 19 tf ns 13 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 85 6 Turn-off Fall Time Gate Charge Characteristics pF VDS=16V, VGS=4.5V, IDS=55A 19 6 nC 5 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =14A, VDD = 16V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2019 2 www.ruichips.com RU2060L Typical Characteristics VGS=10V RDS(ON) limited Ids=55A DC 100µs 1ms 10ms TC=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse RθJC=3°C/W Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2019 3 www.ruichips.com RU2060L Typical Characteristics Vgs=3.5,4.5,6V 2V 1.5V 2.5V 1V 4.5V TJ=150°C TJ=125°C TJ=25°C TJ=25°C Frequency=1.0MHz VDS=16V IDS=55A Ciss Coss Crss Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2019 4 www.ruichips.com RU2060L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU2060L RU2060L TO252 Tape&Reel 2500 13'' 16mm Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2019 5 www.ruichips.com RU2060L Package Information TO252 θ1 θ1 θ1 θ θ2 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2019 6 www.ruichips.com