RU207C

RU207C N-Channel Advanced Power MOSFET Features Pin Description • 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) SOT23-3 Applications • Power Management N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1.7 A TA=25°C 24 A TA=25°C 6 TA=70°C 4.5 TA=25°C 1.25 TA=70°C 0.75 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation IDP RJC RJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 100 °C/W TBD mJ Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 1 www.ruichips.com RU207C Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU207C Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, IDS=250µA ⑤ V VDS=20V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±10V, VDS=0V Drain-Source On-state Resistance 20 µA 30 0.5 0.7 1.5 V ±100 nA VGS=4.5V, IDS=6A 10 13 mΩ VGS=2.5V, IDS=5A 15 18 mΩ 1 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs 15 ns 8 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.5 Ciss Input Capacitance 590 Coss Output Capacitance VGS=0V, VDS=10V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 90 td(ON) Turn-on Delay Time 8 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics 15 ns 33 13 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=10V, IDS=6A, VGEN=4.5V,RG=6Ω pF 125 VDS=16V, VGS=4.5V, IDS=6A 10 nC 1.6 3.4 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 2 www.ruichips.com RU207C Ordering and Marking Information Device Marking① Package RU207C 4XYWW SOT23-3 Packaging Quantity Reel Size Tape width Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X         =Assembly site code Y         =Year WW     =Work Week Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 3 www.ruichips.com RU207C Typical Characteristics Power Dissipation 1.4 8.0 ID - Drain Current (A) 1.2 PD - Power (W) Drain Current 9.0 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS=4.5V 0.0 175 25 Safe Operation Area RDS(ON) limited ID - Drain Current (A) 100 10 10µs 100µs 1ms 10ms 1 0.1 DC TA=25°C 0.01 0.01 0.1 1 10 75 100 125 150 175 TJ - Junction Temperature (°C) 100 RDS(ON) - On - Resistance (mΩ) TJ - Junction Temperature (°C) 50 Drain Current 50 Ids=6A 40 30 20 10 0 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 0.1 Single Pulse RθJA=100°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 4 www.ruichips.com RU207C Typical Characteristics Output Characteristics 4V 4.5V 25 3V 2.5V 20 15 2V 10 5 1.5V 0 0 1 2 3 Drain-Source On Resistance 50 4 5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 30 40 30 2.5V 20 4.5V 10 0 0 2 4 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=10mΩ 1 TJ=150°C -25 0 25 50 75 100 125 TJ=25°C 0.1 0.01 0.0 -50 0.2 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 600 Ciss 400 Coss Crss 1 10 100 1 1.2 1.4 10 VDS=16V IDS=6A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 0.8 Gate Charge 1000 0 0.6 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 200 10 Source-Drain Diode Forward 10 VGS=4.5V IDS=6A 0.5 8 ID - Drain Current (A) -IS - Source Current (A) Normalized On Resistance 2.5 6 5 10 15 QG - Gate Charge (nC) 5 www.ruichips.com RU207C Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 6 www.ruichips.com RU207C Package Information SYMBOL A A1 A2 b c D E E1 e e1 L θ SOT23-3 MM MIN 0.950 0.000 0.900 0.300 0.080 2.800 1.500 2.650 1.800 0.300 0° NOM 1.150 * 1.100 0.400 0.150 2.925 1.600 2.800 0.950 BSC 1.900 0.450 4° Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 INCH MAX 1.450 0.150 1.300 0.500 0.200 3.050 1.750 3.000 MIN 0.037 0.000 0.035 0.012 0.003 0.110 0.059 0.104 2.000 0.600 8° 0.071 0.012 0° 7 NOM 0.045 * 0.043 0.016 0.006 0.115 0.063 0.110 0.037 BSC 0.075 0.018 4° MAX 0.057 0.006 0.051 0.020 0.008 0.120 0.069 0.118 0.079 0.024 8° www.ruichips.com RU207C Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 8 www.ruichips.com