RU20P4C

RU20P4C P-Channel Advanced Power MOSFET MOSFET Features • -20V/-4A, RDS (ON) =40mΩ (Typ.) @ VGS=-4.5V RDS (ON) =55mΩ (Typ.) @ VGS=-2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged Pin Description SOT-23-3 • Lead Free and Green Available Applications • Power Management • Load Switch Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current P-Channel MOSFET Rating -20 ±12 150 -55 to 150 TA=25°C -1.5 ① Unit V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TA=25°C TA=25°C TA=70°C PD RθJA ② -16 A A -4 -3.2 1.3 0.8 100 Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 www.ruichips.com RU20P4C Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU20P4C Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=-250µA VDS=-20V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-4A VGS=-2.5V, IDS=-3A -20 -1 -30 -0.4 -0.7 -1.1 ±100 40 55 60 100 V µA V nA mΩ mΩ Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs 15 8 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=2.5Ω, IDS=-4A, VGEN=-4.5V, RG=6Ω 7.5 585 95 50 8 11 30 10 -1 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=-16V, VGS=-4.5V, IDS=-4A 9 1.8 2.9 13 nC Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 2 www.ruichips.com RU20P4C Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) -ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com -ID - Drain Current (A) RU20P4C Typical Characteristics Output Characteristics Drain-Source On Resistance -VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage -VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU20P4C Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) -IS - Source Current (A) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge -VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 5 -VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU20P4C Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 6 www.ruichips.com RU20P4C Ordering and Marking Information RU20P4 Package (Available) C : SOT-23-3 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 7 www.ruichips.com RU20P4C Package Information SOT-23-3 SYMBOL A A1 A2 b c D MM MIN 1.050 0.0000 1.050 0.300 0.100 2.820 MAX 1.250 0.100 1.150 0.500 0.200 3.020 MIN INCH MAX 0.049 0.004 0.045 0.020 0.008 0.119 SYMBOL E E1 e e1 L θ MIN 1.500 2.650 1.800 0.300 0° 0.041 0.000 0.041 0.012 0.004 0.111 MM MAX 1.700 2.950 2.000 0.600 8° INCH MIN 0.059 0.104 0.071 0.012 0° MAX 0.067 0.116 0.079 0.024 8° 0.950(BSC) 0.037(BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 8 www.ruichips.com RU20P4C Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2011 9 www.ruichips.com