RU3091M

RU3091M N-Channel Advanced Power MOSFET Features Pin Description • 30V/90A, D D D D RDS (ON) =2.8mΩ(Typ.)@VGS=10V RDS (ON) =3.4mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S G SS PIN1 PIN1 PDFN5060 D Applications • DC/DC Converters • Load switch • Synchronous rectification G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 50 A TC=25°C 360 A TC=25°C 90 TC=100°C 57 TA=25°C 28 TA=70°C 21 TC=25°C 54 TC=100°C 22 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID ③ Continuous Drain Current@TA(VGS=10V) Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 ③ 1 A W www.ruichips.com RU3091M Symbol RqJC RqJA ③ Parameter Rating Unit Thermal Resistance-Junction to Case 2.3 °C/W Thermal Resistance-Junction to Ambient 30 °C/W 156 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3091M Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) VGS=0V, IDS=250µA V 1 VDS=30V, VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 30 30 1 µA 2.5 V ±100 nA VGS=4.5V, IDS=35A 3.4 4.5 mΩ VGS=10V, IDS=50A 2.8 3.5 mΩ 1.2 V Diode Characteristics VSD ⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 30 ns 36 nC 1.3 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance VGS=0V, 3280 Coss Output Capacitance 580 Crss Reverse Transfer Capacitance VDS=15V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time VDD=15V,IDS=20A, 12 td(OFF) Turn-off Delay Time VGEN=10V,RG=4.7Ω 35 tf 290 8 Turn-off Fall Time Gate Charge Characteristics pF ns 9 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 VDS=24V, VGS=10V, IDS=20A 2 60 15 nC 22 www.ruichips.com RU3091M Notes: ① ② ③ ④ ⑤ ⑥ Max current is limited to 50A by the package. Pulse width limited by safe operating area. When mounted on 1 inch square copper board, t 10sec. Limited by TJmax, IAS =25A, VDD =24V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width300s, duty cycle2%. Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU3091M RU3091M PDFN5060 Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 13'' 12mm www.ruichips.com RU3091M Typical Characteristics VGS=10V RDS(ON) limited Ids=50A DC 10µs 100µs 1ms 10ms TC=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse RθJC=2.3°C/W Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 4 www.ruichips.com RU3091M Typical Characteristics Vgs=8,9,10V 5V 3V 10V 2V VGS=10V IDS=50A TJ=150°C TJ=25°C TJ=25°C Rds(on)=2.8mΩ VDS=24V IDS=50A Frequency=1.0MHz Ciss Coss Crss Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 5 www.ruichips.com RU3091M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 6 www.ruichips.com RU3091M Package Information PDFN5060 D2 0.04R E F H C L K E E1 E2 1.20R E F L1 L1 A e b a Land P attern ( O nly for R eference) 4.32 6.61 3.81 4.52 D1 3.91 1.27 0.61 1.27 4.42 Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 7 www.ruichips.com