RU3415EB

RU3415EB P-Channel Advanced Power MOSFET Features Pin Description • -20V/-4A, RDS (ON) =38mΩ(Typ.)@VGS=-4.5V RDS (ON) =50mΩ(Typ.)@VGS=-2.5V D • Low On-Resistance • ESD protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S SOT23 Applications • Load Switch • Power Management • Battery Protection P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1 A TA=25°C -16 A TA=25°C -4 TA=70°C -3.2 TA=25°C 1.3 TA=70°C 0.8 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation IDP RJC RJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 125 °C/W TBD mJ Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 1 www.ruichips.com RU3415EB Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3415EB Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA ⑤ V VDS=-20V, VGS=0V -1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±12V, VDS=0V Drain-Source On-state Resistance -20 µA -30 -0.4 -1 V ±10 µA VGS=-4.5V, IDS=-4A 38 45 mΩ VGS=-2.5V, IDS=-3A 50 60 mΩ -1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs 19 ns 26 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.6 Ciss Input Capacitance 640 Coss Output Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 75 td(ON) Turn-on Delay Time 9 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics 16 ns 29 19 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=-10V, IDS=-4A, VGEN=-4.5V,RG=6Ω pF 115 VDS=-16V, VGS=-4.5V, IDS=-4A 9.5 nC 1.8 2.9 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 2 www.ruichips.com RU3415EB Ordering and Marking Information Device Marking Package RU3415EB RU3415E SOT23 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 7’’ 8mm www.ruichips.com RU3415EB Typical Characteristics Power Dissipation 1 0 4 3 2 1 0 0 25 50 75 100 Drain Current 5 -ID - Drain Current (A) PD - Power (W) 2 125 150 VGS=-4.5V 25 50 TJ - Junction Temperature (°C) 75 100 125 150 TJ - Junction Temperature (°C) Drain Current RDS(ON) limited -ID - Drain Current (A) 10 1 RDS(ON) - On - Resistance (mΩ) Safe Operation Area 100 10µs 100µs 1ms 10ms DC 160 Ids=-4A 120 80 40 0.1 TA=25°C 0.01 0.01 0.1 0 1 10 100 0 1000 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 0.1 Single Pulse RθJA=125°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 4 www.ruichips.com RU3415EB Typical Characteristics Output Characteristics -4.5V -5V 16 120 -4V -3V 12 -2V 8 4 -1V 0 0 1 2 Drain-Source On Resistance 160 RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 20 3 4 5 80 -2.5V 40 -4.5V 0 0 2 4 -VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=38mΩ 1 TJ=150°C -25 0 25 50 75 100 125 TJ=25°C 0.1 0.01 0.0 -50 0.2 150 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz Ciss 600 400 Coss Crss 0 1 10 -VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 5 0.8 1 1.2 1.4 Gate Charge 1000 200 0.6 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 800 10 Source-Drain Diode Forward 10 VGS=-4.5V ID=-4A 0.5 8 -ID - Drain Current (A) -IS - Source Current (A) Normalized On Resistance 2.5 6 100 10 VDS=-16V IDS=-4A 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 QG - Gate Charge (nC) www.ruichips.com RU3415EB Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 6 www.ruichips.com RU3415EB Package Information Db SOT23 θ 5 2 . 0 1 L 1 E E L C e 1 e 1 A 2A A SYMBOL A A1 A2 b c D E E1 e e1 L L1 θ MM MIN 0.900 0.050 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.400 0° NOM 1.025 0.075 0.975 0.400 0.115 2.900 1.300 2.400 0.950 TYP 1.900 0.540 REF 0.500 * INCH MAX 1.150 0.100 1.020 0.500 0.150 3.000 1.400 2.550 MIN 0.035 0.002 0.035 0.012 0.003 0.110 0.047 0.089 2.000 0.071 0.600 8° 0.016 0° Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 7 NOM 0.040 0.003 0.038 0.016 0.005 0.114 0.051 0.094 0.037 TYP 0.075 0.021 REF 0.018 * MAX 0.045 0.004 0.040 0.020 0.006 0.118 0.055 0.100 0.079 0.020 8° www.ruichips.com RU3415EB Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 8 www.ruichips.com