RU60E6D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/6A, RDS (ON) =32mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V • ESD Protected • Reliable and Rugged • Ultra Low On-Resistance • Lead Free and Green Available
Pin Description
SOT-223
Applications
• Power Management • DC-DC Converter
N-Channel MOSFET
Absolute Maximum Ratings
Symbol Parameter Rating 60 ±20 150 -55 to 150 TA=25°C TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 3 24 6 5
①
Unit
Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A W °C/W
Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested ID PD RθJA
②
Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient
2.5 1.6 50
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RU60E6D
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
③
(TA=25°C Unless Otherwise Noted) RU60E6D Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS= 10V, IDS=5.5A VGS= 4.5V, IDS=3A
60 1 30 1.5 2.0 2.7 ±10 32 40 40 60
V µA V µA mΩ mΩ
Diode Characteristics VSD
trr Qrr
③
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
④
ISD=1A, VGS=0V ISD=3A, dlSD/dt=100A/µs 40 60 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz VDD=30V, RL=10Ω, IDS=3A, VGEN= 10V, RG=25Ω 0.7 360 44 24 8 18 28 17
1
V ns nC Ω pF
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
④
ns
Gate Charge Characteristics Qg Qgs Qgd
Notes:
Total Gate Charge Gate-Source Charge Gate-Drain Charge
①Current limited by maximum junction temperature. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing.
16 VDS=48V, VGS= 10V, IDS=3A 3 5
20 nC
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2011
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RU60E6D
Typical Characteristics
Power Dissipation Drain Current
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Ptot - Power (W)
Safe Operation Area
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
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Normalized Effective Transient
Square Wave Pulse Duration (sec)
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ID - Drain Current (A)
RU60E6D
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
VDS - Drain-Source Voltage (V)
RDS(ON) - On Resistance (mΩ)
ID - Drain Current (A)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
VGS - Gate-Source Voltage (V)
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Normalized Threshold Voltage
Tj - Junction Temperature (°C)
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RDS(ON) - On - Resistance (m)
RU60E6D
Typical Characteristics
Drain-Source On Resistance Source-Drain Diode Forward
Normalized On Resistance
Tj - Junction Temperature (°C)
IS - Source Current (A)
VSD - Source-Drain Voltage (V) Capacitance
Gate Charge
VDS - Drain-Source Voltage (V)
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
QG - Gate Charge (nC)
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2011
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RU60E6D
Ordering and Marking Information
RU60E6
Package (Available) D : SOT-223; Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2011
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RU60E6D
Package Information
SOT-223
SYMBOL A A1 A2 b c D D1
MM MIN 1.520 0.000 1.500 0.660 0.250 6.200 2.900 MAX 1.800 0.100 1.700 0.820 0.350 6.400 3.100 MIN
INCH MAX 0.071 0.004 0.067 0.032 0.014 0.252 0.122 SYMBOL E E1 e e1 L θ MIN 3.300 6.830 4.500 0.900 0° 0.060 0.000 0.059 0.026 0.010 0.244 0.114
MM MAX 3.700 7.070 4.700 1.150 10°
INCH MIN 0.130 0.269 0.177 0.035 0° MAX 0.146 0.278 0.185 0.045 10°
2.300(BSC)
0.091(BSC)
ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
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RU60E6D
Customer Service
Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact:
Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com
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