RU8080R

RU8080R N-Channel Advanced Power MOSFET MOSFET Features • 80V/80A, RDS (ON) =9mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested Pin Description TO-220 • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 80 ±25 175 -55 to 175 TC=25°C 80 ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink I DP ID 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 320 ② A A W W °C/W 80 59 ① Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 125 62.5 1.2 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 410 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 www.ruichips.com RU8080R Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TC=25°C Unless Otherwise Noted) RU8080R Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 80V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 80 1 30 2 3 4 ±100 9 11 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs 62 183 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 40V, Frequency=1.0MHz VDD=40V, RL=1Ω, IDS=40A, VGEN= 10V, RG=4.7Ω 1.3 4120 520 200 34 95 103 33 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=64V, VGS= 10V, IDS=40A 58 15 19 nC Calculated continuous current based on maximum allowable junction temperature. Pulse width limited by safe operating area. Limited by TJmax, IAS =29A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 2 www.ruichips.com RU8080R Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 ID - Drain Current (A) www.ruichips.com RU8080R Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) Drain-Source On Resistance RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Gate Threshold Voltage VGS - Gate-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 4 Normalized Threshold Voltage Tj - Junction Temperature (°C) www.ruichips.com RDS(ON) - On - Resistance (m) RU8080R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) Capacitance IS - Source Current (A) VSD - Source-Drain Voltage (V) Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) 5 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 www.ruichips.com RU8080R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 6 www.ruichips.com RU8080R Ordering and Marking Information RU8080 Package (Available) R : TO220 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 7 www.ruichips.com RU8080R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 8 www.ruichips.com RU8080R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2011 9 www.ruichips.com