S DM40N02
S amHop Microelectronics C orp. M a y , 2 0 0 4 ve r 1 . 1
N -C ha nne l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor
P R O D U C T S U MMA R Y
V DS S
20V
F E AT U R E S
( m W ) Max
ID
3 .8A
R DS (ON)
S upe r high de ns e c e ll de s ign for low R D S (O N ) .
44 @ V G S = 4 .5V 55 @ V G S = 2 .5V
R ugge d a nd re lia ble . S urfa c e Mount P a c ka ge .
S O-8 1
A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d)
P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =1 2 5 C b -P uls e d ( 3 0 0 us P uls e W idth) D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG L imit 20 12 3. 8 10. 5 1. 7 2. 5 -5 5 to 1 5 0 U nit V V A A A W C
T H E R MA L C H A R A C T E R I S T I C S
T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 50 C /W
1
S DM40N02
E L E C T R I C A L C H A R A C T E R I S T I C S ( T A = 2 5 C unle s s othe rwis e note d)
P a ra me te r O F F C H A R A C T E R IS T IC S
D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S
c
S ymbol
C ondition
V G S = 0 V , I D = 2 5 0 uA V D S = 2 0 V, V G S = 0 V V G S = 8V, V DS =0V V D S = V G S , I D = 2 5 0 uA V G S =4 . 5 V , I D = 2 . 0 A V G S =2 . 5 V , I D = 1 . 0 A V D S = 5 V, V G S = 4 . 5 V V D S = 1 0 V, I D = 4 . 0 A
Min Typ C Ma x U nit
20 1 V uA 1 0 0 nA 0. 7 30 40 8 17 710 300 80 V 44 m-ohm 55 m-ohm A S
PF PF PF
O N C H A R A C T E R IS T IC S b
G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e
D Y N A MI C C H A R A C T E R I S T I C S
Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e
C IS S C OS S CRSS
c
V DS =8V, V G S = 0V f =1. 0MH Z
S W IT C H IN G C H A R A C T E R IS T IC S
T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge
tD(O N) tr tD(O F F ) tf Qg Q gs Q gd
V DD = 10V ID = 1A V G E N = 4. 5V R L = 1 0 o hm R G E N = 6 ohm V DS =10V, ID = 4A V G S =4. 5V
2
10 15 26 20 12 4 2
ns ns ns ns nC nC nC
S DM40N02
E L E C T R I C A L C H A R A C T E R I S T I C S ( T A=2 5 C unle s s othe rwis e note d)
P a ra me te r
5
D iode F orwa rd V olta ge
S y m bo l
VSD
C ondition
V G S = 0 V , I s =1 . 7 A
M in T y p M a x U n it
0. 72 1. 2 V
C
D R A IN -S O U R C E D IO D E C H A R A C T E R IS T IC S b
N ote s a . S urfa c e Mounte d on F R 4 B oa rd, t
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