STM4460

STM4460 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 7A R DS(ON) (m Ω) Max 32 @ VGS=10V 45 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a TA=25°C TA=70°C d Limit 40 ±20 7 5.6 28 9 Units V V A A A mJ W W °C -Pulsed Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Jun,18,2008 1 www.samhop.com.tw STM4460 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS= ±20V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=7A VGS=4.5V , ID=6A VDS=10V , ID=7A 1 1.9 26 33 16 3 32 45 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 635 95 55 11 12 17 11 11 5.1 1.7 3 7 0.98 1.3 VDD=20V ID=7A VGS=10V RGEN=3.3 ohm VDS=20V,ID=7A,VGS=10V VDS=20V,ID=6A,VGS=4.5V VDS=20V,ID=7A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage VGS=0V,IS=7A A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,RG=25Ω,VDD=20V.(See Figure13) Jun,18,2008 2 www.samhop.com.tw S TM4460 Ver 1.0 30 VGS=4.5V VGS=10V 20 I D, Drain Current(A) I D, Drain Current(A) 24 VGS=4V 18 VGS=3.5V 15 10 25 C 5 Tj=125 C -55 C 0 12 VGS=3V 6 VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 40 30 VGS=10V 20 10 1 Figure 2. Transfer Characteristics 1.5 1.4 R DS(on), On-Resistance Normalized 1.3 1.2 1.1 1.0 0.0 RDS(on)(m Ω) VGS=4.5V VGS=4.5V ID=6A VGS=10V ID=7A 1 6 12 18 24 30 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 VDS=VGS ID=250uA 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature 3 Figure 6. Breakdown Voltage Variation with Temperature Jun,18,2008 www.samhop.com.tw S TM4460 Ver 1.0 72 60 75 C 20.0 Is, Source-drain current(A) ID=7A 10.0 25 C R DS(on)(m Ω) 48 125 C 36 25 C 24 12 0 125 C 75 C 0 2 4 6 8 10 1.0 0.2 0.5 0.8 1.1 1.4 1.7 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 900 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 750 C, Capacitance(pF) Ciss 600 450 300 150 0 0 Crss 5 10 15 20 25 30 Coss 8 6 4 2 0 0 VDS=20V ID=7A 2 4 6 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 220 60 ) ON Li m it 1m 10 m s 10 s TD(off ) I D, Drain Current(A) Switching Time(ns) 100 60 10 10 R 0u DS ( s Tr TD(on) Tf 1 V G S =10V S ingle P ulse T c=25 C DC 1 1 VDS=20V,ID=7A VGS=10V 0.1 60 100 300 600 0.1 6 10 1 10 100 Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jun,18,2008 4 www.samhop.com.tw STM4460 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 1 0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 Single Pulse 1. 2. 3. 4. t1 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.001 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jun,18,2008 5 www.samhop.com.tw S TM4460 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1 .35 0.10 4.80 3.81 5.79 0.41 0 MAX 1 .75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 Jun,18,2008 6 www.samhop.com.tw S TM4460 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V Jun,18,2008 7 www.samhop.com.tw