STM8306

S T M8306 S amHop Microelectronics C orp. M a r. 0 6 , 2 0 0 6 v e r1 . 1 D ua l E nha nc e me nt Mode F ie ld E ffe c t T ra ns is tor ( N a nd P C ha nne l) P R O D U C T S U MMA R Y (N-C hannel) V DS S 30V P R O D U C T S U MMA R Y (P -C hannel) V DS S -30V ID 7A R DS (ON) ( m W ) Max ID -6A R DS (ON) ( m W ) Max 26 @ V G S = 1 0V 35 @ V G S = 4 .5 D1 8 38 @ V G S = -10V 52 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 A B S O L U T E MA X IMU M R AT IN G S ( T A=2 5 C unle s s othe rwis e note d) P a ra me te r D ra in-S ourc e V olta ge G a te -S ourc e V olta ge D ra in C urre nt-C ontinuous a @ T J =2 5 C b -P uls e d D ra in-S ourc e D iode F orwa rd C urre nt a Ma ximum P owe r D is s ipa tion a O pe ra ting J unc tion a nd S tora ge Te mpe ra ture R a nge S ymbol V DS VGS ID IDM IS PD TJ, TS TG N - C ha nne l P - C ha nne l 30 20 7 28 1. 7 2. 0 -5 5 to 1 5 0 -30 20 -6 -24 -1 . 7 U nit V V A A A W C T H E R MA L C H A R A C T E R I S T I C S T he rma l R e s is ta nc e , J unc tion-to-A mbie nt a R JA 62. 5 C /W 1 S T M8306 N-C hannel E L E C T R IC AL C HAR AC T E R IS T IC S (T A = 25 C unles s otherwis e noted) P a ra me te r 5 S ymbol B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c C ondition V G S = 0 V , I D = 2 5 0 uA V D S = 2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = 2 5 0 uA V G S =10V, ID =7A V G S =4. 5V, ID =5A V D S = 1 5 V, V G S = 1 0 V V DS = 10V, ID =7A Min Typ C Ma x U nit 30 1 V uA 1 0 0 nA 1. 0 1. 7 20 25 20 14 610 142 95 3 V O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 26 m ohm 35 m ohm A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =15V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd 2 V D D = 1 5 V, ID = 7A , R L =2. 1 ohm, V G S = 1 0 V, R G E N = 6 ohm V DS =15V, ID =7A , V G S =10V V DS =15V, ID =7A , V G S =4. 5V V DS =15V, ID = 7A , V G S =10V 10 11 25 4 14. 6 7. 5 1. 7 4 ns ns ns ns nC nC nC nC S T M8306 P -C hannel E L E C T R IC AL C HAR AC T E R IS T IC S (T A =25 C unles s otherwis e noted) P a ra me te r O F F C H A R A C T E R IS T IC S D ra in-S ourc e B re a kdown V olta ge Z e ro G a te V olta ge D ra in C urre nt G a te -B ody L e a ka ge B V DS S IDS S IG S S V G S (th) R DS (O N ) ID(O N ) gF S C IS S C OS S CRSS c S ymbol C ondition V G S = 0 V , I D = - 2 5 0 uA V D S = -2 4 V, V G S = 0 V V G S = 2 0 V, V D S = 0 V V D S = V G S , I D = - 2 5 0 uA V G S =-10V, ID= -5A V G S = -4. 5V, ID= -4A V D S = -1 5 V, V G S = -1 0 V V D S = -1 5 V, I D = - 5 A Min Typ C Ma x U nit -3 0 -1 V uA 1 0 0 nA -1 -1.7 29 42 -2 0 9.6 850 235 150 -3 V O N C H A R A C T E R IS T IC S b G a te T hre s hold V olta ge D ra in-S ourc e O n-S ta te R e s is ta nc e O n-S ta te D ra in C urre nt F orwa rd T ra ns c onduc ta nc e 38 m ohm 52 m ohm A S PF PF PF D Y N A MI C C H A R A C T E R I S T I C S c Input C a pa c ita nc e O utput C a pa c ita nc e R e ve rs e T ra ns fe r C a pa c ita nc e V DS =-15V, V G S = 0V f =1. 0MH Z S W IT C H IN G C H A R A C T E R IS T IC S T urn-O n D e la y T ime R is e T ime T urn-O ff D e la y T ime F a ll T ime Tota l G a te C ha rge G a te -S ourc e C ha rge G a te -D ra in C ha rge tD(O N) tr tD(O F F ) tf Qg Q gs Q gd V D = -1 5 V, R L=15 ohm, I D = -1 A , V G E N = -1 0 V, R G E N =6 ohm V DS =-15V, ID=-5A , V G S =-10V V DS =-15V, ID=-5A , V G S =-4. 5V V DS =-15V, ID = - 5A , V G S =-10V 3 11 23 45 48 17. 1 9. 3 1. 5 5. 5 ns ns ns ns nC nC nC nC S T M8306 E L E C T R I C A L C H A R AC T E R I S T I C S ( T A = 2 5 C u n l e s s o t h e r w i s e n o t e d ) Parameter Diode Forward Voltage Sy m b o l b Co n d i t i o n VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.79 1.2 -0.77 -1.2 C D R A I N - S O U R C E D I O D E C H A R AC T E R I S T I C S V SD V N o te s a.Surface Mounted on FR4 Board, t＜10sec. b.Pulse Test:Pulse Width＜300μs, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. N-Channel 5 20 VGS=4,4.5~10V 16 25 20 I D , D r a i n Cu r r e n t ( A ) 12 VGS=3.5V 8 VGS=3V ID, Drain Current (A) 15 10 Tj=125 C 5 0 0.0 -55 C 25 C 1 2 3 4 5 6 4 0 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage ( V ) VGS, Gate-to-Source Voltage ( V ) Figure 1. Output Characteristics 1200 1000 2.2 1.8 1.4 1.0 0.6 0.4 0 -50 Figure 2. Transfer Characteristics V G S =10V I D =7A C, Capacitance (pF) Ciss 600 400 200 0 0 Crss 5 10 15 20 25 30 Coss RDS(ON), On-Resistance ( N orma liz e d) 800 -25 0 25 50 75 100 125 150 Tj( C) VDS, Drain-to Source Voltage ( V ) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 S T M8306 N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 25 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) Is , S ource-drain current (A) 20 20 15 10 5 0 0 5 10 V DS =10V 15 10.0 5 .0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 5 S T M8306 P-C hannel 20 -VGS=4.5~10V 16 20 -VGS=4V 25 25 C -55 C -I D , D ra in C urre nt ( A ) -I D , D ra in C urre nt ( A ) 12 -V G S =3.5V 8 4 0 15 10 -VGS=3V 5 T j=125 C 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 -V D S , D ra in-to-S ourc e V olta ge ( V ) -V G S , G a te -to-S ourc e V olta ge ( V ) F i gur e 1. O utput C har acter i sti cs F i gur e 2. T r ansf er C har acter i sti cs 1200 1. 8 R DS (ON) , O n-R e s is ta nc e ( N orma liz e d) 1000 1. 6 1. 4 1. 2 1. 0 0. 8 V G S =-10V I D =-5A C , C a pa c ita nc e ( pF ) C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 0. 6 -5 0 0 50 100 150 -V D S , D ra in-to S ourc e V olta ge ( V ) T j, J unction T emperature ( C ) F i gur e 3. C apaci tance F i gur e 4. O n-R esi stance V ar i ati on wi th T emper atur e 6 S T M8306 P-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V GS I D =-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gF S , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =-10V 15 10.0 5.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S T M8306 N-C hannel V G S , G ate to S ource V oltage (V ) 10 I D , Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS =15V I D =7A 10 R DS (O N) L im it 10m 100 ms s 11 DC 1s 0.1 0.03 V G S =10V S ingle P ulse T A =25 C 0.1 1 10 30 50 4 8 12 16 20 24 28 32 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea P-C hannel -V G S , G ate to S ource V oltage (V ) 10 -I D , Drain C urrent (A) 50 8 6 4 2 0 0 V DS =-15V I D =-5A 10 R (O DS N) L im it 10m 100 1s DC s 11 ms 0.1 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 50 4 8 12 16 20 24 28 32 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea 8 S T M8306 V DD ton V IN D VG S RL V OUT V OUT R GE N G 90% 10% toff tr 90% td(on) td(off) 90% 10% tf INVE R TE D 5 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 10 Normalized Transient Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. 2. 3. 4. R thJ A ( t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A ( t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 9 S T M8306 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 ° A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° 10 S T M8306 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 2.10 D0 ψ1.5 (MIN) D1 ψ1.5 + 0.1 - 0.0 E 12.0 ±0.3 E1 1.75 E2 5.5 ±0.05 P0 8.0 P1 4.0 P2 2.0 ±0.05 T 0.3 ±0.05 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M 330 ±1 N 62 ±1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H ψ12.75 + 0.15 K S 2.0 ±0.15 G R V 11