STU407DH

S T U407DH S amHop Microelectronics C orp. Apr 20 2007 D ual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 40V P R ODUC T S UMMAR Y (P -C hannel) V DS S -40V ID 16A R DS (ON) ( m Ω ) Max ID -12A R DS (ON) ( m Ω ) Max 29 @ V G S = 10V 39 @ V G S = 4.5V D1 47 @ V G S = -10V 64 @ V G S = -4.5V D2 D1/D2 G1 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed a S ymbol V DS V GS 25 C 70 C ID IDM IS Tc= 25 C PD Tc= 70 C N-C hannel P-C hannel 40 20 16 13.8 50 8 11 7.7 -40 20 -12 -10 -50 -6 Unit V V A A A A Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange W C T J , T S TG -55 to 175 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 13.6 120 C /W C /W S T U407DH N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 6A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 8A Min Typ C Max Unit 40 1 10 1 1.8 21 29 20 15 735 120 70 0.36 13 15 26 10 15 7.2 2.0 3.8 3 29 39 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =20V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 20V ID = 3 A V GS = 10V R GE N = 3 ohm V DS =20V, ID =8A,V GS =10V V DS =20V, ID =8A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =20V, ID = 8 A V GS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T U407DH P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = -32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID= -6A V GS =-4.5V, ID= -4A V DS = -5V, V GS = -10V V DS = -10V, ID = -6A Min Typ C Max Unit -40 -1 10 -1 -1.6 39 49 -20 9 920 135 75 3.5 12 13 60 25 15 7.2 2 4.0 -3 47 64 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =-20V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = -20V ID = -3A V GS = -10V R GE N = 3 ohm V DS =-20V, ID =-6A,V GS =-10V V DS =-20V, ID =-6A,V GS =-4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =-20V, ID = -6 A V GS =-10V 3 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T U407DH ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =8A VGS = 0V, Is =-6A N-Ch P-Ch Min Typ Max Unit 0.94 -0.87 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Pulse Test:Pulse Width 300 s,Duty Cycle 2%. b.Guaranteed by design,not subject to production testing. N-Channel 30 V G S =4.5V 25 12 15 ID , Drain C urrent(A) 20 V G S =10V I D , Drain C urrent (A) V G S =3.5V 15 10 5 0 V G S =8V 9 T j=125 C 6 25 C 3 -55 C 0 0 0.8 1.6 2.4 3.2 4.0 4.8 V G S =3V 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 2.0 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance Normalized 50 1.8 1.6 1.4 1.2 1.0 0.0 V G S =4.5V I D =6A V G S =10V I D =8A R DS (on) ( m Ω) 40 30 20 V G S =4.5V V G S =10V 10 0 1 6 12 18 24 30 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 STU407DH BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250uA 1.40 ID=250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 6 Tj, Junction Temperature ( C ) Tj, Junction Temperature ( C ) Figure 5. Gate Threshold Variation with Temperature 60 Figure 6. Breakdown Voltage Variation with Temperature 20.0 ID=8A 50 RDS(on) (m Ω) 40 30 20 10 0 75 C 25 C Is, Source-drain current (A) 125 C 10.0 25 C 125 C 75 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 VGS, Gate- Source Voltage (V) VSD, Body Diode Forward Voltage (V) Figure 7. On-Resistance vs. Gate-Source Voltage 200 160 Figure 8. Body Diode Forward Voltage Variation with Source Current Tj(max)=175 C TA=25 C Power (W) 120 80 40 0 0.0001 0.001 0.01 0.1 1 Figure 9. Single Pulse Power Rating Junction-to-Case 5 S T U407DH 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 V DS =20V I D =8A 1000 C , C apacitance (pF ) C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 10. C apacitance F igure 11. G ate C harge 300 Tr 100 80 I D , Drain C urrent (A) S witching T ime (ns ) 100 60 10 T D(off) T D(on) Tf 10 R DS ( ) ON L im it 10 10 ms 1m s 1s DC 0m s 1 1 V DS =20V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V ) F igure 12.s witching characteris tics F igure 13. Maximum S afe O perating Area 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 14. Normalized T hermal T rans ient Impedance C urve 6 S T U407DH P-C hannel 20 V G S =-10V V G S =-4.5V 15 -I D , Drain C urrent(A) 16 V G S =-3.5V 12 -I D , Drain C urrent (A) 12 9 T j=125 C 6 25 C 3 0 -55 C 8 V G S =-8V 4 0 V G S =-3V 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 120 1.5 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance Normalized 100 1.4 1.3 1.2 1.1 1.0 0.0 V G S =-4.5V I D =-4A V G S =-10V I D =-6A R DS (on) ( m Ω) 80 60 40 V G S =-4.5V V G S =-10V 20 0 1 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) -I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 S T U407DH B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =-250uA 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 120 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =-6A -Is , S ource-drain current (A) 100 125 C 10.0 25 C R DS (on) ( m Ω) 80 60 25 C 40 20 0 75 C 125 C 75 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 -V G S , G ate- S ource Voltage (V ) -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage 200 160 F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent P ower (W ) T j(max)=175 C T A =25 C 120 80 40 0 0.0001 0.001 0.01 0.1 1 F igure 9. S ingle P uls e P ower R ating J unction-to-C as e 8 S T U407DH -V G S , G ate to S ource V oltage (V ) 1200 1000 C is s 10 8 6 4 2 0 V DS =-20V I D =-6A C , C apacitance (pF ) 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 -V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 10. C apacitance 300 Tr F igure 11. G ate C harge 70 -I D , Drain C urrent (A) S witching T ime (ns ) (O N Tf )L 100 60 10 T D(on) im i t T D(off) 50 10 0 1 s ms 10 10 RD ms S DC 1 1 V DS =20V ,ID=1A V G S =10V 1 0.03 V G S =-10V S ingle P ulse T c=25 C 0.1 1 10 30 60 6 10 60 100 300 600 R g, G ate R es is tance ( Ω) -V DS , Drain-S ource V oltage (V ) F igure 12.s witching characteris tics 2 F igure 13. Maximum S afe O perating Area r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 14. Normalized T hermal T rans ient Impedance C urve 9 S T U407DH P A C K A G E OUT L INE DIME NS IONS TO-252-4L A B H K C M J D L S P G REF . Millimeters MIN MAX A B C D P S G H J K L M 6.40 5.2 6.80 2.20 0.50 0.40 2.20 0.45 0 0.90 5.40 6.80 5.50 10.20 3.00 0.80 0.60 2.40 0.60 0.15 1.50 5.80 1.27 REF. 10 S T U407DH TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape TO-252-4L Reel UNIT: 11