2SA1186_07

LAPT 2SA1186 Application : Audio and General Purpose (Ta=25°C) Ratings –100max –100max –150min 50min∗ –2.0max 60typ 110typ V pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –150 –150 –5 –10 –2 100(Ta=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–3A IC=–5A, IB=–0.5A VCE=–12V, IE=1A VCB=–80V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA V 19.9±0.3 4.0 a b ø3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.8typ tf (µs) 0.2typ 5.45±0.1 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –10 (V C E =–4V) –10 00 00 m –1 m A 60m A –2 Collector Current I C (A) –8 0m A –6 –2 Collector Current I C (A) –8 mA –120 100mA – –4 –8 –6 –60mA –4 Tem p) Tem (Ca se ˚C 125 25˚ –5A 0 0 –1 –2 –3 –4 0 0 –0.5 –1.0 –1.5 –2.0 0 0 –30 –1 Base-Emittor Voltage V B E (V) ˚C ( C( –2 –2 Ca I B =–20m A Cas eT se –1 emp –40mA –4 p) I C =–10A ) –2 Collector-Emitter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =–4V) 300 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 125˚C DC C urrent G ain h FE θ j - a ( ˚ C/W) θ j-a – t Characteristics 3 DC Curr ent Gain h FE 25˚C 100 Typ 100 –30˚C Transient Thermal Resistance –1 –5 –10 1 50 0.5 50 20 –0.02 –0.1 –0.5 –1 –5 –10 30 –0.02 –0.1 –0.5 0.2 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 80 –30 Safe Operating Area (Single Pulse) 100 M aximum Power Dissip ation P C (W) P c – T a Derating Cu t-of f Fr eque ncy f T ( MH Z ) Collecto r Cur rent I C (A) 60 T yp –10 10 ms W ith In –5 fin D C ite he 40 50 at si nk –1 Without Heatsink Natural Cooling 20 –0.5 0 0.02 0.1 1 10 –0.2 –2 –10 –100 –200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 11