2SA1216

2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Ratings Unit VCBO VCB=–180V –100max µA VEB=–5V –100max µA IC=–25mA –180min V 24.4±0.2 VCEO –180 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 30min∗ IB –5 A VCE(sat) IC=–8A, IB=–0.8A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 40typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 b ns IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 5 –1 1 0.3typ 0.7typ 0.2typ I C – V CE Characteristics (Typical) I B =–20mA –2 –3 0 –0.2 –0.4 10 –0.02 –0.5 –1 –5 (V C E =–4V) 125˚C 100 25˚C –30˚C 50 10 –0.02 –10 –17 N –0.1 –0.1 f T – I E Characteristics (Typical) e T emp –1 –2 –2.4 θ j-a – t Characteristics –0.5 –1 –5 –10 –17 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) ) e T em p) Tem p) Cas 0 Base-Emittor Voltage V B E (V) m m ot R 50 0 –1.0 200 DC Cur rent Gain h F E Typ ec o 100 –0.8 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 –0.6 Base Current I B (A) h FE – I C Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 200 10 m Emitter Current I E (A) 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 1 si 0.1 at 0 0.02 Without Heatsink Natural Cooling he –0.5 120 ite –1 fin –5 160 In 20 DC –10 ith Collect or Cur ren t I C (A) s T 40 yp W M aximum Power Dissipa ti on P C (W) –50 60 Cu t-off Fre quen cy f T (MH Z ) DC Curr ent Gain h F E ew –4 Collector-Emitter Voltage V C E (V) θ j - a (˚ C/W) –1 –5A 0 Transient Thermal Resistance 0 –5 I C =–10A en 0 –1 Cas –50mA –10 ˚C( –5 –2 125 –100mA Collector Current I C (A) –150mA rN –2 00 mA –10 –15 fo A d –3 00 m (V C E =–4V) –17 de 5A –1 A 00 m A –5 –1. –7 mA Weight : Approx 18.4g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –15 0 –40 V CE ( sa t ) – I B Characteristics (Typical) E es ig VB2 (V) 3.0 +0.3 -0.1 5.45±0.1 C D IC (A) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 B RL (Ω) A 2 3 5.45±0.1 VCC (V) m 00 9 a ■Typical Switching Characteristics (Common Emitter) –17 2.1 ˚C( Tstg 6.0±0.2 36.4±0.3 –30 V Conditions ase –180 VCBO External Dimensions MT-200 (Ta=25°C) SymboI C(C Unit 25˚ Ratings 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 20.0min LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 13