2SA1295

2SA1295 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Ratings Unit ICBO VCB=–230V –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –230min V VCEO –230 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 2-ø3.2±0.1 7 9 21.4±0.3 20.0min a b 2 3 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ –1 00 mA –5 –50mA I B =–20mA 0 –1 –2 –3 ew –1 –5A 0 0 –0.5 –1.0 –1.5 m m h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.5 –1 –5 25˚C 100 50 –30˚C 10 –0.02 –10 –17 N –0.1 125˚C Transient Thermal Resistance 10 –0.02 DC Cur rent Gain h FE ec o ot R 50 0 –0.8 –0.1 –0.5 –1 –1.6 f T – I E Characteristics (Typical) –3.2 –5 –10 –17 θ j-a – t Characteristics 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) –2.4 Base-Emittor Voltage V B E (V) 200 Typ 0 –2.0 (V C E =–4V) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 200 –40 D 1 Emitter Current I E (A) 16 10 –0.05 –3 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 0.1 si 0 0.02 at Without Heatsink Natural Cooling –0.1 he –0.5 120 ite 20 –1 fin p 160 In Ty –5 ith 40 s C W Collect or Cur ren t I C (A) –10 m M aximum Power Dissipa ti on P C (W) 10 Cu t-of f Fr eque ncy f T ( MH Z ) DC Cur rent Gain h F E –5 Base Current I B (A) h FE – I C Characteristics (Typical) 100 p) I C =–10A –4 Collector-Emitter Voltage V C E (V) 200 –10 en 0 –2 em mA eT –200 125 ˚C ( Cas 25˚C 0mA (V C E =–4V) –15 Collector Current I C (A) –30 –10 mA Weight : Approx 18.4g a. Part No. b. Lot No. –17 θ j- a ( ˚C/W) Collector Current I C (A) 0 –50 – 3 rN – A 1.0 fo A d .5 –1 de –15 0A 3.0 +0.3 -0.1 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A –3 .0 . –2 E es ig IC (A) C D RL (Ω) –17 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ns Tstg 6.0±0.2 2.1 mp) V Conditions e Te –230 External Dimensions MT-200 (Ta=25°C) Symbol Cas Unit VCBO ■Electrical Characteristics (Ta=25°C) Ratings ˚C ( Symbol –30 ■Absolute maximum ratings Application : Audio and General 4.0max LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150