2SA1693_07

2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –80 –80 –6 –6 –3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings –10max –10max –80min 50min∗ –1.5max 20typ 150typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–80V VEB=–6V IC=–50mA VCE=–4V, IC=–2A IC=–2A, IB=–0.2A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.3 IB2 (A) 0.3 ton (µs) 0.18typ tstg (µs) 1.10typ tf (µs) 0.21typ Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –6 –2 0 0m A – 0 15 V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –6 (V C E =–4V) mA –1 00 m A –8 0m A Collector Current I C (A) Collector Current I C (A) –4 –50mA –2 –4 –30mA e Te mp) e Te mp) Cas –2 –20mA –1 I C =–6A –4A –2A 0 0 –0.5 –1.0 –1.5 –2 I B =–10mA ˚C ( (Cas 0 0 –1 –2 –3 –4 0 0 –30˚C 25˚C 125 –1 Base-Emittor Voltage V B E (V) (Case Temp ) –2 Collector-Emitter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =–4V) 300 DC Curr ent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 DC Cur rent Gain h FE 125˚C 25˚C 100 –30˚C θ j-a – t Characteristics θ j- a ( ˚ C/W) Transient Thermal Resistance 5 Typ 100 1 50 50 0.5 0.3 30 –0.02 –0.1 –0.5 –1 –5 –6 30 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –20 Safe Operating Area (Single Pulse) 60 10 P c – T a Derating Typ Cut -off Fre quen cy f T (M H Z ) Collector Curr ent I C (A) s –5 20 100ms M aximum Power Dissipa ti on P C ( W) –10 m W ith DC 40 In fin ite he at si –1 –0.5 Without Heatsink Natural Cooling nk 10 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 56 –0.1 –5 –10 –50 –100 3.5 0 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 27