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2SB1257_07

2SB1257_07

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SB1257_07 - Silicon PNP Epitaxial Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SB1257_07 数据手册
(2 k Ω)(6 5 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –60 –60 –6 –4(Pulse–6) –1 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1257 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz Ratings –10max –10max –60min 2000min –1.5max –2max 150typ 75typ V V 16.2 B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA µA V 23.0±0.3 9.5±0.2 a b MHz pF 1.75 2.15 1.05 5.45±0.1 1.5 4.4 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –10 IB2 (mA) 10 ton (µs) 0.4typ tstg (µs) 0.8typ tf (µs) 0.6typ 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 2.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –6 A 3m – 1 .8 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –4 (V C E =–2V) mA IB –5 Collector Current I C (A) =– 2. –1 .5 m A –1.2 mA Collector Current I C (A) –3 –4 –1.0mA –2 Temp –3A –1 I C =–1A –2A (Cas (Case –2 125˚C –1 0 0 –1 –2 –3 –4 –5 –6 –0.6 –0.2 –0.5 –1 –5 –10 –50 0 0 –1 Base-Emittor Voltage V B E (V) –30˚C –1 25˚C (Case Temp e Te –3 ) –0.8mA mp) –2 ) –2 –2.2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) (V C E =–2V) 8000 5000 DC Cur r ent Gai n h F E 8000 (V C E =–2V) 5000 DC Cur r ent Gai n h F E θ j - a (˚ C/W) h FE – I C Characteristics (Typical) Typ h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 1000 500 1000 500 12 5˚C 25 ˚C –3 100 50 0˚C 100 50 20 –0.02 –0.1 –0.5 –1 –5 –6 Transient Thermal Resistance 1 0.7 20 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 Time t(ms) 100 3.0 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 240 (V C E =–12V) –10 Safe Operating Area (Single Pulse) 25 P c – T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm 200 Cut- off F req uency f T (M H Z ) Co lle ctor Cu rre nt I C ( A) Maxim um Power Dissipation P C (W) –5 10 m DC 1m s 20 s Typ 160 W ith In 120 –1 150x150x2 1 00x 1 0 10 0x fin ite he –0.5 2 at si nk 80 40 –0.1 0 0.05 0.1 0.5 1 4 –0.07 –3 Without Heatsink Natural Cooling 50x50x2 Without Heatsink 2 0 –5 –10 –70 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 39
2SB1257_07 价格&库存

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