2SB1258

(3 kΩ)(1 0 0 Ω) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) A µA –100min hFE VCE=–2V, IC=–3A 1000min V IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 100typ pF V 3.9 V I C – V CE Characteristics (Typical) –2 –1 –2 –3 –4 –5 –0.6 –0.5 –1 –6 Collector-Emitter Voltage V C E (V) –1 –10 m m –1 (V C E =–4V) –1 5000 12 1000 5˚C ˚C 25 500 –3 0˚C 100 30 –0.03 –6 –0.1 Collector Current I C (A) –0.5 5 –1 –6 1 0.5 1 10 Safe Operating Area (Single Pulse) 30 –20 s s 150x150x2 ite he 100x100x2 at si 10 nk –0.1 fin 20 In Without Heatsink Natural Cooling 20 ith –1 –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Cur rent I C (A) 0µ s 0µ s 40 m 60 DC 50 10 –5 80 1m 100 10 –10 Ma xim um Powe r Dissipation P C (W) Typ 1000 P c – T a Derating (V C E =–12V) 120 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –2 –2.2 θ j-a – t Characteristics Transient Thermal Resistance DC Curr ent Gain h FE ec o –0.5 0 Base-Emittor Voltage V B E (V) 8000 R ot –0.1 N 80 –0.03 Cu t-off Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 500 0 –100 –200 h FE – I C Temperature Characteristics (Typical) Typ 1000 es ig –4A (V C E =–4V) 5000 –2 –6A Base Current I B (mA) h FE – I C Characteristics (Typical) 8000 –3 I C =–2A –1 en –1 0 –4 mp) –3 –2 e Te –0.9mA –5 (Cas Collector Current I C (A) –4 (V C E =–4V) –6 –3 125˚C –1 .8 m A –1.2 mA 0 I C – V BE Temperature Characteristics (Typical) ew mA IB –5 0.5typ Collector Current I C (A) –2.0 Weight : Approx 2.0g a. Part No. b. Lot No. B C E fo mA =– 3. – 4 2. 1.6typ V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 4m A –6 0.6typ 6 –6 tf (µs) D 5 –10 tstg (µs) θ j- a ( ˚ C/ W) –3 ton (µs) IB2 (mA) IB1 (mA) rN 10 –30 VBB2 (V) VBB1 (V) d IC (A) 2.4±0.2 2.2±0.2 de RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) 1.35±0.15 ns Tstg ø3.3±0.2 a b ) –6(Pulse–10) IC –10max VEB=–6V IC=–10mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 ) IEBO V 10.1±0.2 (Case V –6 µA –30˚C –100 VEBO –10max 4.0±0.2 VCEO VCB=–100V 0.8±0.2 ICBO Unit ±0.2 V Ratings Temp –100 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Case VCBO Symbol 25˚C Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 50x50x2 Without Heatsink 2 0 0.05 0.1 0.5 1 Emitter Current I E (A) 40 5 6 C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) B Equivalent circuit 13.0min Darlington –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150