(7 0 Ω ) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –160 –150 –5 –8 –1 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SB1559
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–6A IC=–6A, IB=–6mA IC=–6A, IB=–6mA VCE=–12V, IE=1A VCB=–10V, f=1MHz Ratings –100max –100max –150min 5000min∗ –2.5max –3.0max 65typ 160typ V V MHz pF
20.0min 4.0max 3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389)
Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit
5.0±0.2
External Dimensions MT-100(TO3P)
15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
µA µA
19.9±0.3
V
4.0
a b
ø3.2±0.1
2
1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1
0.65 +0.2 -0.1 1.4
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC (V) –60 RL (Ω) 10 IC (A) –6 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –6 IB2 (mA) 6 ton (µs) 0.7typ tstg (µs) 3.6typ tf (µs) 0.9typ
Weight : Approx 6.0g a. Part No. b. Lot No.
I C – V CE Characteristics (Typical)
m A
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) –3
I C – V BE Temperature Characteristics (Typical)
–8 (V C E =–4V)
–2
–8
mA
.5
–10
–2.0
mA
– 1 .8 m
A
A – 1 .5 m –1. 3m A
–1 .0 mA
–0.8m A
Collector Current I C (A)
Collector Current I C (A)
–6
–6
–2
–8A –6A I C =–4A
–4
–0.5m A
–4
p) Tem
emp se T (Ca
(Ca
se
I B =–0.3mA
–2
–1
˚C
–2
25˚C
125
0
0
–2
–4
–6
0 –0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30
˚C (
Cas
e Te
mp)
)
–2
–3
Collector-Emitter Voltage V C E (V)
Base Current I B (mA)
Base-Emittor Voltage V B E (V)
(V C E =–4V) 40,000 DC C urrent G ain h FE DC Cur rent Gain h FE 50000 125˚C
(V C E =–4V)
θ j - a (˚ C/W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
4
Typ
25˚C 10000 –30˚C 5000
10,000
Transient Thermal Resistance
1
5,000
0.5
2,000 –0.2
–0.5
–1 Collector Current I C (A)
–5
–8
1000 –0.2
0.2 –0.5 –1 –5 –8 Collector Current I C (A)
1
5
10
50 100 Time t(ms)
500 1000 2000
f T – I E Characteristics (Typical)
(V C E =–12V) 100 –20 –10 Cut -off Fre quen cy f T ( MH Z ) 80 Collector Curre nt I C (A)
Safe Operating Area (Single Pulse)
80
10
0m s
P c – T a Derating
m
s
–5
Typ
60
D
M aximum Po wer Dissipation P C (W)
10
C
60
W ith In fin ite he
–1 –0.5 Without Heatsink Natural Cooling –0.1
40
at si nk
40
20
20
Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 8 –0.05 –2 –5 –10 –50 –100 –200 3.5 0 0 25 50 75 100 125 150
Emitter Current I E (A)
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
47
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