0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SB1559_07

2SB1559_07

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SB1559_07 - Silicon PNP Epitaxial Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SB1559_07 数据手册
(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –160 –150 –5 –8 –1 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1559 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–6A IC=–6A, IB=–6mA IC=–6A, IB=–6mA VCE=–12V, IE=1A VCB=–10V, f=1MHz Ratings –100max –100max –150min 5000min∗ –2.5max –3.0max 65typ 160typ V V MHz pF 20.0min 4.0max 3 B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 10 IC (A) –6 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –6 IB2 (mA) 6 ton (µs) 0.7typ tstg (µs) 3.6typ tf (µs) 0.9typ Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –3 I C – V BE Temperature Characteristics (Typical) –8 (V C E =–4V) –2 –8 mA .5 –10 –2.0 mA – 1 .8 m A A – 1 .5 m –1. 3m A –1 .0 mA –0.8m A Collector Current I C (A) Collector Current I C (A) –6 –6 –2 –8A –6A I C =–4A –4 –0.5m A –4 p) Tem emp se T (Ca (Ca se I B =–0.3mA –2 –1 ˚C –2 25˚C 125 0 0 –2 –4 –6 0 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 0 –1 –30 ˚C ( Cas e Te mp) ) –2 –3 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) (V C E =–4V) 40,000 DC C urrent G ain h FE DC Cur rent Gain h FE 50000 125˚C (V C E =–4V) θ j - a (˚ C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 4 Typ 25˚C 10000 –30˚C 5000 10,000 Transient Thermal Resistance 1 5,000 0.5 2,000 –0.2 –0.5 –1 Collector Current I C (A) –5 –8 1000 –0.2 0.2 –0.5 –1 –5 –8 Collector Current I C (A) 1 5 10 50 100 Time t(ms) 500 1000 2000 f T – I E Characteristics (Typical) (V C E =–12V) 100 –20 –10 Cut -off Fre quen cy f T ( MH Z ) 80 Collector Curre nt I C (A) Safe Operating Area (Single Pulse) 80 10 0m s P c – T a Derating m s –5 Typ 60 D M aximum Po wer Dissipation P C (W) 10 C 60 W ith In fin ite he –1 –0.5 Without Heatsink Natural Cooling –0.1 40 at si nk 40 20 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 5 8 –0.05 –2 –5 –10 –50 –100 –200 3.5 0 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 47
2SB1559_07 价格&库存

很抱歉,暂时无法提供与“2SB1559_07”相匹配的价格&库存,您可以联系我们找货

免费人工找货