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2SB1647_07

2SB1647_07

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SB1647_07 - Silicon PNP Epitaxial Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SB1647_07 数据手册
(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –150 –150 –5 –15 –1 130(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1647 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–30mA VCE=–4V, IC=–10A IC=–10A, IB=–10mA IC=–10A, IB=–10mA VCE=–12V, IE=2A VCB=–10V, f=1MHz Ratings –100max –100max –150min 5000min∗ –2.5max –3.0max 45typ 320typ V V MHz pF 20.0min 4.0max 2 3 B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit 5.0±0.2 2.0 1.8 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 4.8±0.2 2.0±0.1 µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) 10 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –10 IB2 (mA) 10 ton (µs) 0.7typ tstg (µs) 1.6typ tf (µs) 1.1typ Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –15 –2 m A –1.5mA V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –3 I C – V BE Temperature Characteristics (Typical) –15 (V C E =–4V) –50mA –10mA –3mA –1 .0m A Collector Current I C (A) –0.8 mA Collector Current I C (A) –10 –0. 5m A –2 –10 p) Tem I C =–15A emp se T (Ca I C =–1 0A I C =–5A ) (Ca ˚C 125 25˚C 0 0 –2 –4 –6 0 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 0 –1 –30 ˚C ( Cas –5 –1 –5 e Te I B =–0.3mA –2 mp) se –3 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) 50,000 DC C urrent G ain h FE (V C E =–4V) 50000 DC C urrent G ain h FE 125˚C 25˚C 10000 5000 –30˚C (V C E =–4V) θ j- a ( ˚ C/ W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 Typ Transient Thermal Resistance 1 10,000 5,000 0.5 1,000 –0.2 –0.5 –1 Collector Current I C (A) –5 –10 –15 1000 –0.2 –0.5 –1 Collector Current I C (A) –5 –10 –15 0.1 1 10 100 Time t(ms) 1000 2000 f T – I E Characteristics (Typical) (V C E =–12V) 60 Safe Operating Area (Single Pulse) –50 10 P c – T a Derating 130 10 Cut -off Fre quen cy f T (MH Z ) –10 40 Collect or Cur ren t I C ( A) –5 0m m s DC s M aximum Po wer Dissipat io n P C (W) 100 W ith In fin ite he at si nk –1 –0.5 Without Heatsink Natural Cooling 50 20 –0.1 0 0.02 0.05 0.1 0.5 1 5 10 –0.05 –3 –5 –10 –50 –100 –200 3.5 0 0 Without Heatsink 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 52
2SB1647_07 价格&库存

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