2SC3835_07

2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 120 8 7(Pulse14) 3 70(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Humidifier, DC-DC Converter, and General Purpose (Ta=25°C) Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 50 RL (Ω) 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.6 ton (µs) 0.5max tstg (µs) 3.0max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 7 2 A 00m V CE ( sat ) – I B Characteristics (Typical) 2.6 I C – V BE Temperature Characteristics (Typical) 7 (V C E =4V) 1 A 50m 100 mA 6 6 Collector Current I C (A) 2 Collector Current I C (A) 5 60mA 40m A 5 4 4 p) Tem mp) (Cas e Te (Ca 1 se 3 20 mA 3 ˚C 1 1 0 0.005 0.01 0 0 1 2 3 4 0.05 0.1 0.5 1 0 0 –30˚C I B =10mA 25˚C 125 2 2 (Case Temp 5A ) 3A I C= 1 A 0.5 Base-Emittor Voltage V B E (V) 1.0 1.1 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =4V) 200 DC C urrent G ain h FE DC C urrent G ain h FE 300 1 2 5 ˚C (V C E =4V) θ j - a (˚ C/W) Transient Thermal Resistance h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 Typ 100 100 25˚ C –30 50 ˚C 50 1 0.5 0.4 1 10 100 Time t(ms) 1000 2000 20 0.02 0.1 0.5 1 5 7 20 0.01 0.05 0.1 0.5 1 57 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 30 20 10 Cut-o ff Fr equ ency f T (MH Z ) 5 Co lle ctor Cu rre nt I C (A) 20 Safe Operating Area (Single Pulse) 10 P c – T a Derating 70 0µ s M aximu m Power Dissip ation P C (W) 60 W 10 ms 50 ith In fin ite 40 he 1 0.5 Without Heatsink Natural Cooling at si nk 30 10 20 0.1 0 –0.01 0.05 –0.05 –0.1 –0.5 –1 –5 5 10 50 120 200 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) 10 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 76