2SC3851/3851A
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) sAbsolute maximum ratings (Ta=25°C)
Ratings Symbol 2SC3851 2SC3851A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 4 1 25(Tc=25°C) 150 –55 to +150 100 80 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz
Application : Audio and PPC High Voltage Power Supply, and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO VCB= 80 100max 60min 80min 40 to320 0.5max 15typ 60typ Conditions
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Ratings 2SC3851 2SC3851A 100max 100
Unit
µA µA
V V MHz pF
2.54 2.2±0.2 16.9±0.3
V
8.4±0.2
13.0min
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 12 RL (Ω) 6 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 200 IB2 (mA) –200 ton (µs) 0.2typ tstg (µs) 1typ tf (µs) 0.3typ
3.9 BCE
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V ) 4
V CE ( sat ) – I B Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
4 (V CE =4V)
0m
60 m A
50mA
IB
=7
A
Collector Current I C (A)
3
30mA
Collector Current I C (A)
40mA
1.0
3
Tem
emp
) se T (Ca
2
2
p)
20mA
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Part No. b. Lot No.
(Ca
˚C
10mA
I C =1 A
0
0
1
2
3
4
5
6
0 0.005 0.01
0.05
0.1
0.5
1
0
0
0.5 Base-Emittor Voltage V B E (V)
–30˚C
5mA
2A
25˚C
1
1
125
(Cas
3A
e Te
0.5
mp)
se
1.0
1.2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
(V C E =4V) 500 DC Curr ent Gain h FE DC Curr ent Gain h FE 500
(V C E =4V)
θ j - a (˚C/W)
Transient Thermal Resistance
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
5
125˚C
25˚ C
Typ
100
100
– 3 0 ˚C
50
50
1
20 0.01
0.1
0.5
1
4
20 0.01
0.05
0.1
0.5
1
4
0.5
1
10 Time t(ms)
100
1000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
40 (V C E =12V) 10
Safe Operating Area (Single Pulse)
30
1m 10
0m
P c – T a Derating
s
10
s
30 Collector Cur rent I C (A)
DC
s
Ma xim um Powe r Dissipat io n P C (W)
5 Cu t-off Fr eque ncy f T ( MH Z )
m
W
20
ith In fin
1 0.5
ite
20
Typ
he at si nk
10
10
Without Heatsink Natural Cooling 0.1
Without Heatsink 3 5 10 50 80 0
0 –0.005 –0.1 –0.5 –1 –4 Emitter Current I E (A)
0.05 Collector-Emitter Voltage V C E (V)
0
50
100
150
Ambient Temperature Ta(˚C)
77
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