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2SC3851_07

2SC3851_07

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SC3851_07 - Silicon NPN Epitaxial Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SC3851_07 数据手册
2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3851 2SC3851A VCBO VCEO VEBO IC IB PC Tj Tstg 80 60 6 4 1 25(Tc=25°C) 150 –55 to +150 100 80 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=25mA VCE=4V, IC=1A IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz Application : Audio and PPC High Voltage Power Supply, and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO VCB= 80 100max 60min 80min 40 to320 0.5max 15typ 60typ Conditions External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Ratings 2SC3851 2SC3851A 100max 100 Unit µA µA V V MHz pF 2.54 2.2±0.2 16.9±0.3 V 8.4±0.2 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 12 RL (Ω) 6 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 200 IB2 (mA) –200 ton (µs) 0.2typ tstg (µs) 1typ tf (µs) 0.3typ 3.9 BCE I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 4 V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 4 (V CE =4V) 0m 60 m A 50mA IB =7 A Collector Current I C (A) 3 30mA Collector Current I C (A) 40mA 1.0 3 Tem emp ) se T (Ca 2 2 p) 20mA ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. (Ca ˚C 10mA I C =1 A 0 0 1 2 3 4 5 6 0 0.005 0.01 0.05 0.1 0.5 1 0 0 0.5 Base-Emittor Voltage V B E (V) –30˚C 5mA 2A 25˚C 1 1 125 (Cas 3A e Te 0.5 mp) se 1.0 1.2 Collector-Emitter Voltage V C E (V) Base Current I B (A) (V C E =4V) 500 DC Curr ent Gain h FE DC Curr ent Gain h FE 500 (V C E =4V) θ j - a (˚C/W) Transient Thermal Resistance h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 5 125˚C 25˚ C Typ 100 100 – 3 0 ˚C 50 50 1 20 0.01 0.1 0.5 1 4 20 0.01 0.05 0.1 0.5 1 4 0.5 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 40 (V C E =12V) 10 Safe Operating Area (Single Pulse) 30 1m 10 0m P c – T a Derating s 10 s 30 Collector Cur rent I C (A) DC s Ma xim um Powe r Dissipat io n P C (W) 5 Cu t-off Fr eque ncy f T ( MH Z ) m W 20 ith In fin 1 0.5 ite 20 Typ he at si nk 10 10 Without Heatsink Natural Cooling 0.1 Without Heatsink 3 5 10 50 80 0 0 –0.005 –0.1 –0.5 –1 –4 Emitter Current I E (A) 0.05 Collector-Emitter Voltage V C E (V) 0 50 100 150 Ambient Temperature Ta(˚C) 77
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