2SC4883A

2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SC4883 2SC4883A 150 150 6 2 1 20(Tc=25°C) 150 –55 to +150 180 180 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=10mA VCE=10V, IC=0.7A IC=0.7A, IB=70mA VCE=12V, IE=–0.7A VCB=10V, f=1MHz Application : Audio Output Driver and TV Velocity-modulation (Ta=25°C) Ratings 2SC4883 2SC4883A 10max 150 10max 150min 180min 60 to 240 1.0max 120typ 30typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO VCB= Conditions External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA µA V 16.9±0.3 8.4±0.2 180 V 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 100 IB2 (mA) –100 ton (µs) 0.5typ tstg (µs) 1.5typ tf (µs) 0.5typ 2.54 3.9 BCE I C – V CE Characteristics (Typical) 2 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 2 (V C E =4V) 100mA 60mA 30m A 15m A Collector Current I C (A) 10m A 2 Collector Current I C (A) 1 1 ) Temp) –55˚C (Case eT Cas 1 ˚C ( I C =2A 0.5A 0 2 5 10 50 1A 100 500 1000 0 0 0 0 2 4 6 8 10 0.5 Base-Emittor Voltage V B E (V) 25˚C 125 (Cas e Te mp) I B =5mA emp ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. 1.0 Collector-Emitter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =4V) 300 DC Curr ent Gain h FE h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 DC Curr ent Gain h FE 125˚C 25˚C 100 θ j- a ( ˚ C/W) Transient Thermal Resistance θ j-a – t Characteristics 7 5 Typ 100 –55˚C 50 30 0.01 50 40 0.01 0.05 0.1 0.5 1 2 0.05 0.1 0.5 1 2 1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 160 140 5 Safe Operating Area (Single Pulse) 20 1m s P c – T a Derating Typ Cut-o ff Fr equ ency f T (M H Z ) 120 Collect or Cur ren t I C (A) 100 80 60 40 20 0 –0.01 0.01 –0.1 Emitter Current I E (A) –1 –2 1 5 10 1 0.5 D C Ma xim um Powe r Dissipat io n P C (W) 10 ms 10 0m s W ith In fin ite he 10 at si nk 0.1 0.5 Without Heatsink Natural Cooling 1.2SC4883 2.2SC4883A 1 50 100 2 200 2 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 119