2SC5100

2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A 20typ MHz VCB=10V, f=1MHz 200typ pF VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ 0.32typ I B =10mA 0 0 1 2 3 1 0 4 0 0.2 0.4 2A 0.6 0.8 0 1.0 0.5 (V C E =4V) 200 Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 8 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 100 0.1 Collector Current I C (A) 0.5 1.5 1 5 8 4 1 0.5 0.2 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 20 40 10 he at 40 si nk Collecto r Cur ren t I C (A) ite Without Heatsink Natural Cooling fin 0.5 In 1 60 ith 10 s 20 0m DC 5 Typ s 10 m 30 W Ma xim um Powe r Dissipation P C ( W) 10 Cut -off Fre quen cy f T (MH Z ) DC C urrent G ain h FE 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 mp) 4A Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 2 I C =8A Collector-Emitter Voltage V C E (V) 20 0.02 4 e Te 20mA 2 6 Cas 4 2 ˚C ( 50m A E (V C E =4V) 125 6 C Weight : Approx 6.5g a. Part No. b. Lot No. 8 Collector Current I C (A) 75 m A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 1 A 00m 4.4 B 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A A 0m 20 350m Collector Current I C (A) 15 V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 IC (A) I C – V CE Characteristics (Typical) 0.8 2.15 1.05 +0.2 -0.1 RL (Ω) A 1.75 5.45±0.1 VCC (V) 0m ø3.3±0.2 a b O(50 to 100), P(70 to 140), Y(90 to 180) ■Typical Switching Characteristics (Common Emitter) 8 3.45 ±0.2 3.0 V(BR)CEO A 0.8±0.2 V 8 µA 5.5 6 IC 10max 5.5±0.2 1.6 VEBO VEB=6V 15.6±0.2 ) IEBO µA Temp V 10max (Case 120 VCB=160V –30˚C VCEO Conditions mp) ICBO e Te V (Cas 160 Unit 25˚C Unit VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Ratings 3.3 Symbol 9.5±0.2 ■Electrical Characteristics Ratings 23.0±0.3 Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –8 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 127