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2SD1796_01

2SD1796_01

  • 厂商:

    SANKEN(三垦)

  • 封装:

  • 描述:

    2SD1796_01 - Silicon NPN Triple Diffused Planar Transistor - Sanken electric

  • 数据手册
  • 价格&库存
2SD1796_01 数据手册
Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60±10 60±10 6 4 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD1796 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz Ratings 10max 10max 60±10 2000min 1.5max 60typ 45 typ V MHz pF 13.0min Equivalent circuit B C (3 k Ω)(15 0 Ω) E Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 IB2 (mA) –10 ton (µs) 1.0typ tstg (µs) 4.0typ tf (µs) 1.5typ 2.54 3.9 BCE ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) 0m A 1.0m A 0 .8 m A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 4 4 =2 IB Collector Current I C (A) 0. 5m A 2 Collector Current I C (A) 3 0 .6 m A 3 p) ase Tem 25˚C (C 4A 1 0.3mA 1 0 0 1 2 3 4 0 0.2 0.5 1 5 10 50 100 0 0 125˚C 1 1 Base-Emittor Voltage V B E (V) –30˚C (C I C= 2 A I C =1 A (Cas I C= 3 A ase Tem 2 I C= 2 e Tem 0.4 mA p) p) 2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =4V) 20000 D C Cur r ent åGai n h FE 10000 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 10000 5000 125 ˚C θ j-a – t Characteristics θ j- a ( ˚ C/W) Transient Thermal Resistance 5 Typ 5000 DC Cur rent åGain h FE 1000 500 1000 500 ˚C 25 0˚C –3 1 V C B =10V I E =–2V 0.5 1 10 Time t(ms) 100 1000 100 50 0.05 0.1 0.5 1 4 Collector Current I C (A) 100 50 0.05 0.1 0.5 1 4 Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =10V) 120 10 Safe Operating Area (Single Pulse) 30 10 P c – T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 1m 100 Cut- off F req uency f T (M H Z ) Collector Cur rent I C (A) s 80 DC Typ 60 1 0.5 Ma xim um Powe r Dissipat io n P C (W) 5 10 s m 0m s fin 150x150x2 1 00x 1 0 10 0x 2 ite he at 40 si nk Without Heatsink Natural Cooling 0.1 0.05 50x50x2 Without Heatsink 2 20 0 –0.01 –0.1 –1 –4 3 5 10 50 100 0 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 139
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