2SD2082_01

Darlington 2SD2082 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=8A IC=8A, IB=16mA IC=8A, IB=16mA VCE=12V, IE=–1A VCB=10V, f=1MHz Ratings 10max 10max 120min 2000min 1.5max 2.5max 20typ 210typ V V 16.2 Equivalent circuit B C (2k Ω) (100 Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 120 6 16(Pulse26) 1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Driver for Solenoid, Motor and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA 23.0±0.3 V 9.5±0.2 mA a b MHz pF 1.75 2.15 1.05 5.45±0.1 1.5 4.4 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 5 IC (A) 8 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 16 IB2 (mA) –16 ton (µs) 0.6typ tstg (µs) 7.0typ tf (µs) 1.5typ 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 2.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) A V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 16 (V CE =4V) A 26 40m 20 m 12 m A 6mA 20 Collector Current I C (A) 3mA 2 1. 5m A I C =16A 8A 1 4A Collector Current I C (A) 12 8 ) ) Te 10 I B =1m A emp (Ca se T 4 12 5˚C (Ca 25˚C 0 0 1 2 3 4 5 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 Base-Emittor Voltage V B E (V) –30 ˚C ( Cas e Te se mp) mp 2 Collector-Emitter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =4V) 30000 DC Curr ent Gain h F E 10000 5000 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 DC Curr ent Gain h F E 10000 5000 25 θ j - a (˚C /W) θ j-a – t Characteristics 5 ˚C –30 ˚C Transient Thermal Resistance Typ 125 ˚C 1 0.5 1000 500 1000 500 100 0.2 0.5 1 Collector Current I C (A) 5 10 16 100 0.02 0.5 1 Collector Current I C (A) 5 10 16 0.1 1 10 Time t(ms) 100 3.0 1000 f T – I E Characteristics (Typical) (V C E =12V) 30 50 Safe Operating Area (Single Pulse) 80 10 10 P c – T a Derating Typ Cut- off F req uenc y f T (MH Z ) 10 Collector Cur rent I C (A) 20 5 DC s Ma xim um Powe r Dissipat io n P C (W) m 1m s 0µ s 60 W ith In fin ite he 1 0.5 Without Heatsink Natural Cooling 0.1 0.05 0.03 3 40 at si nk 10 20 0 –0.05 –0.1 –0.5 –1 –5 –10 –16 5 10 50 100 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 146