2SD2439

Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 3.3 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 0.6mA 4 I B =0.4mA 2 0 0 2 4 2 I C =10A I C =7A I C =5A 1 0 6 0.2 0.5 1 5 10 50 h FE – I C Characteristics (Typical) 1 (V C E =4V) 10000 5000 125˚C 10000 25˚C 5000 –30˚C Transient Thermal Resistance DC Curr ent Gain h F E Typ 1000 5 500 0.2 10 0.5 Collector Current I C (A) 2.5 1 5 10 3 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 70000 50000 1 0 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 30 10 m 10 s s he 40 at si nk Without Heatsink Natural Cooling 20 ite 0.5 fin 1 60 In 40 5 0m ith Typ 60 DC 10 W Collecto r Cur ren t I C (A) 80 Ma xim um Powe r Dissipation P C ( W) 100 Cut- off Fr equ ency f T (MH Z ) DC Curr ent Gain h FE 0 100 200 Base Current I B (mA) 40000 0.5 4 2 Collector-Emitter Voltage V C E (V) 1000 02 6 p) 0.8mA Tem 6 8 se 1m A (V C E =4V) 10 3 (Ca 1.2 mA 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. E ˚C Collector Current I C (A) 8 C 125 1. 5m A Collector Current I C (A) A 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/ W) 2m Collector-Emitter Saturation Voltage V C E (s at) (V ) 10 m A 2. 5m A 10 4.4 B V CE ( sat ) – I B Characteristics (Typical) +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 1.75 16.2 Tstg 3.0 1 VCE(sat) 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 mp) VEBO 0.8±0.2 µA 5.5 100max 23.0±0.3 VCB=160V 1.6 150 ICBO mp) VCEO Unit e Te V Ratings e Te 160 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol (Cas VCBO ■Electrical Characteristics (Cas Unit –30˚C Ratings Symbol E Application : Audio, Series Regulator and General Purpose 25˚C ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 9.5±0.2 Darlington C B 20 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 153