SLA5064

SLA5064 N-channel+P-channel External dimensions A 3-phase motor drive Absolute maximum ratings Unit N channel P channel VDSS 60 –60 V VGSS ±20 ±20 V ID 10 –10 A ID(pulse) 15 (PW≤1ms, duty≤25%) –15 (PW≤1ms, duty≤25%) A PT SLA (12-pin) (Ta=25°C) Ratings Symbol ••• 5 (Ta=25°C, with all circuits operating, without heatsink) W 40 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 3.125 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C ■Equivalent circuit diagram 5 4 12 11 6 7 3 2 8 10 9 1 Characteristic curves ID-VDS Characteristics (Typical) –15 4.0V –14 10V 14 12 –12 10 –10 ID (A) ID (A) 3.3V 14 12 10 –3.5V –8 –3.3V –6 6 (VDS=10V) 15 –4.0V 3.5V 8 N-ch (Ta=25°C) ID (A) 15 ID-VGS Characteristics (Typical) P-ch (Ta=25°C) –10V N-ch 8 6 TC=125°C 4 3.0V –4 –3.0V 2 VGS=2.7V –2 VGS=–2.7V 0 0 2 4 6 8 0 10 0 –2 –4 –6 –8 4 25°C –40°C 2 0 0 –10 1 2 3 4 5 VGS (V) VDS (V) VDS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.20 Ta=25°C VGS=4V P-ch 0.20 Ta=25°C VGS=–10V P-ch –15 (VDS=10V) 0.18 0.16 0.16 –12 0.14 0.14 –10 0.08 0.12 0.12 ID (A) 0.10 (ON) (Ω) 0.18 RDS RDS (ON) (Ω) –14 0.10 –6 0.06 0.06 –4 0.04 0.04 0.02 0.02 0.00 0.00 0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10–11 –12–13–14–15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 TC=125°C 25°C –2 RDS(ON)-TC Characteristics (Typical) ID=5A VGS=4V N-ch 0.18 0.16 0.16 0.14 0.14 0.10 (ON) (Ω) 0.18 0.08 0.12 ID=–5A VGS=–10V 0.12 0.10 0.08 0.06 0.06 0.04 0.04 0.02 0.02 0.00 ---40 P-ch 0.20 RDS RDS (ON) (Ω) 0.20 0 50 TC (°C) 100 150 0.00 ---40 0 50 TC (°C) 0 0 –40°C –1 –2 –3 VGS (V) ID (A) ID (A) 88 –8 0.08 100 150 –4 –5 SLA5064 Electrical characteristics (Ta=25°C) N channel Symbol Specification min V(BR)DSS typ max 60 P channel Specification Unit Conditions V ID=100µA, VGS=0V min IGSS ±10 µA VGS=±20V IDSS 100 µA VDS=60V, VGS=0V VTH 1.0 2.0 Re(yfs) 8 RDS(ON) 0.14 V VDS=10V, ID=250µA S VDS=10V, ID=5A Ω VGS=4V, ID=5A Ciss 460 pF Coss 225 pF Crss 50 pF td(on) 25 ns tr 110 ns td(off) 90 ns tf 55 ns VSD 1.15 V trr 75 typ Unit Conditions V ID=–100µA, VGS=0V –60 –1.0 10 µA VGS=±20V –100 µA VDS=–60V, VGS=0V –2.0 8.7 0.14 VDS=10V, f=1.0MHz, VGS=0V ID=5A, VDD 20V, RL=4Ω, VGS=5V, see Fig. 3 on page 16. ISD=10A, VGS=0V ISD=5A, VGS=0V, ns max di/dt=100A/µs V VDS=–10V, ID=–250µA S VDS=–10V, ID=–5A Ω VGS=–10V, ID=–5A 1200 pF 440 pF 120 pF 50 ns 170 ns 180 ns 100 ns –1.25 V 100 ns VDS=–10V, f=1.0MHz, VGS=0V ID=–5A, VDD 20V, RL=4Ω, VGS=–5V, see Fig. 4 on page 16. ISD=–10A, VGS=0V ISD=–5A, VGS=0V, di/dt=100A/µs Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 20 (VDS=10V) Safe Operating Area (SOA) P-ch 20 (VDS=–10V) 10 100µs 10 s 1m M LI 1 (O N) S 25°C 125°C RD ID(A) Re (yfs) (S) Re (yfs) (S) TC=–40°C s 25°C 1 m TC=–40°C 10 IT ED 10 TC=25°C SINGLE PULSE N-ch 20 1 125°C 0.1 0.05 0.1 1 10 0.1 –0.05 –0.1 20 –1 ID (A) –10 0.1 0.1 –20 1 ID (A) 10 100 VDS (V) Capacitance-VDS Characteristics (Typical) VGS=0V N-ch (Ta=25°C) f=1MHz N-ch 5000 5000 VGS=0V P-ch (Ta=25°C) f=1MHz P-ch TC=25°C SINGLE PULSE P-ch –20 100µs 1m –10 s 10 ED IT M (O N) LI 100 S Coss RD ID (A) Capacitance (pF) Coss 100 s Ciss 1000 m –1 Crss Crss 10 10 0 10 20 30 40 50 0 –10 –20 –30 –40 –0.1 –0.1 –50 –14 13 –13 12 11 –12 –11 10 –10 –5 4 –4 3 2 –3 –2 1 0 0 –1 0 1.0 VSD (V) 1.5 30 PT (W) 0V –1 S= G V 25 W ith In fin 25 ite He at 20 –4 5 0.5 30 –8 –7 –6 40 35 –9 6 All Circuits Operating (Ta=25°C) sin k 0V 0V 8 7 IDR (A) 10 VG S= 9 4V V 14 –100 PT-Ta Characteristics P-ch –15 V (Ta=25°C) –10 VDS (V) IDR-VSD Characteristics (Typical) N-ch 15 –1 VDS (V) VDS (V) IDR (A) Capacitance (pF) Ciss 1000 15 10 Without Heatsink 5 0 –0.5 –1.0 VSD (V) –1.5 0 0 50 100 150 Ta (°C) 89 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 C1.5 ± 0.5 4.0 ± 0.2 4 5 6 7 1 E 8 2 B 3 C 4 B 5 C 6 B 7 C 8 9 10 B C E • SIP 15 (SMA15Pin) 4.0 ± 0.2 31.0 ± 0.2 4.0 ± 0.2 2.5 ± 0.2 b a R-End (10.4) 2.4 a 1.46 ± 0.15 0.65 +0.2 0.85 ‒0.1 2.54 0.55 27.94 +0.2 ‒0.1 1.2 2.5 ± 0.2 b 10.2 ± 0.2 31.0 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 ± 0.1 +1.0 Pin No. • SIP 12 (SMA12Pin) 3 9.7 ‒0.5 2 (3.0) 6.7 ± 0.5 0.5 ± 0.15 7 ×P2.54 = 17.78 1.2 ± 0.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 10.2 ± 0.2 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 +0.2 ‒0.1 ± 0.7 a: Part Number b: Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 15 with Fin (SLA15Pin) 1.7 ± 0.1 13.0 a 2.45 ± b Pin1 12 +0.2 0.65 ‒0.1 +0.2 1.2 1.45 ± 0.15 ± 0.15 11 × P2.54 ± 0.7= 27.94 ± 1.0 0.85 ‒0.1 0.55 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * 4.8 ± 0.2 +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 16.4 1.7 ± 0.1 13.0 ± 0.2 4.8 ± 0.2 9.9 ± 0.2 ± 0.2 24.4 ± 0.2 ± 0.2 R-End 2.7 9.5min 16.0± 0.2 φ 3.2 31.0 ± 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 24.4 ± 0.2 Ellipse 3.2 ± 0.15×3.8 ± 0.2 16.0 ± 0.2 31.5max 31.3 ± 0.2 0.15 9.7 ‒0.5 φ 3.2 ± (3.0) 6.7 ± 0.5 • SIP 12 with Fin (SLA12Pin) +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)