SMA4021

SMA4021 PNP Darlington With built-in flywheel diode Electrical characteristics (Ta=25°C) Symbol Ratings Unit Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR –60 –60 –6 –3 –6 (PW≤1ms, Du≤50%) –0.5 –6 (PW≤0.5ms, Du≤25%) –8 (PW≤10ms, Single pulse) 100 4 (Ta=25°C) 20 (Tc=25°C) 150 –40 to +150 V V V A A A A A V ICBO IEBO VCEO hFE VCE(sat) VBE(sat) Tj Tstg VR VF IR trr W °C °C 7 IC=–2A, IB=–4mA (Ta=25°C) Unit Conditions V V µA ns IR=10µA IF=1A VR=100V IF=±100mA D ew 10 9 11 R1: 2kΩ typ R2: 150Ω typ fo Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) A –1.5m en hFE m 75˚C 100 –6 –0.05 –0.1 –0.5 –1 50 –0.03 –5 –6 IC (A) VCE(sat)-IC Temperature Characteristics (Typical) –1 (VCE=–4V) –3 –6 –4 IC (A) VCE (sat) (V) Ta=–30°C 75°C –2 25°C –3 IC=–4A IC=–2A –1 –1 –2 IC=–1A 125°C –1 –1 0 –0.2 –5 –6 –0.5 –1 IC (A) θ j-a-PW Characteristics 20 –5 –10 –50 0 –100 0 –1 –2 VBE (V) PT-Ta Characteristics Safe Operating Area (SOA) 20 –10 10 0µ s m s –1 ts ea IC (A) eH ink PT (W) init 10 5 s Inf 5 1m 10 ith W 15 10µs –5 1 –3 IB (mA) 10 θ j–a (°C / W) –5 –6 IC-VBE Temperature Characteristics (Typical) R ot 75°C N –0.5 –5 25°C 0 –0.5 –0.05 –0.1 IC (A) VCE(sat)-IB Characteristics (Typical) (IC / IB=1000) –3 100 50 –0.03 ec o –5 0˚ –30°C –4 C –3 500 25˚C m –3 VCE (V) 1000 500 °C IC (A) –2 ˚C 25 =1 Ta 1000 –2 0 5000 hFE IB=–2 –1.0mA –0.9mA –0.8mA –4 (VCE=–4V) 10000 typ de 5000 A –1.2m –1 d A .2mA m –1.8 hFE-IC Temperature Characteristics (Typical) (VCE=–4V) 10000 –6 Ta=125 4 3 2 12 8 5 VCE (sat) (V) VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–2A rN 1 –2 Conditions µA mA V V V Specification min typ max 100 1.2 10 100 R1 R2 0 Unit ●Diode for flyback voltage absorption ■Equivalent circuit diagram 6 (Ta=25°C) Specification min typ max –10 –10 –60 2000 5000 12000 –1.5 –2.0 Symbol SMA es ig PT ••• ns Absolute maximum ratings External dimensions B Without Heatsink –0.5 –0.1 Single Pulse –0.05 Without Heatsink 0.5 1 5 10 50 PW (mS) 100 500 1000 0 –40 0 50 Ta (°C) 100 150 –0.03 –3 Ta=25°C –5 –10 –50 –100 VCE (V) 123 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 ns C1.5 ± 0.5 1 E 8 +0.2 ‒0.1 ew 10.2 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 de en m R ot 1.45 ± 0.15 * 4.0 • SIP 15 with Fin (SLA15Pin) φ 3.2 ± 31.3 ± 0.2 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 16.4 ± 0.2 N 11 × P2.54 ± 0.7= 27.94 ± 1.0 1.7 ± 0.1 13.0 ± 0.2 9.9 ± 0.2 2.45 ± R-End +0.2 0.55 4.8 ± 0.2 ± 0.2 1.7 ± 0.1 ± 0.2 12 0.85 ‒0.1 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 24.4 ± 0.2 0.65 ‒0.1 +0.2 ± 0.15 +0.2 0.55 ‒0.1 +0.2 ‒0.1 b Pin1 2.5 ± 0.2 +1.0 R-End ec o 13.0 a 4.8 m 24.4 ± 0.2 ± 0.2 2.7 Ellipse 3.2 ± 0.15×3.8 4.0 ± 0.2 D 1.2 ± 0.1 a: Part Number b: Lot No. 31.0 8 9 10 B C E d 0.55 27.94 ± 0.2 7 C b 0.65 +0.2 0.85 ‒0.1 31.5max 6 B a fo 1.46 ± 0.15 • SIP 12 with Fin (SLA12Pin) 5 C rN 2.4 a (10.4) 10.2 ± 0.2 2.5 ± 0.2 2.54 16.0± 0.2 4 B 31.0 ± 0.2 4.0 ± 0.2 b 9.5min 3 C • SIP 15 (SMA15Pin) 31.0 ± 0.2 1.2 2 B 9.7 ‒0.5 7 (3.0) 6.7 ± 0.5 6 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 5 9.7 ‒0.5 4 16.0 Pin No. 3 es ig 4.0 ± 0.2 2 (3.0) 6.7 ± 0.5 1.2 ± 0.2 0.5 ± 0.15 7 ×P2.54 = 17.78 • SIP 12 (SMA12Pin) φ 3.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 ± 0.15 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)