SMA5112

SMA5112 Absolute maximum ratings Symbol Ratings VDSS VGSS ID 250 ±20 ±7 ID(pulse) EAS* PT θ j-a θ j-c Tch Tstg N-channel 3-phase DC motor 100V AC direct drive External dimensions B Electrical characteristics (Ta=25°C) Unit V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr * : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. ■Equivalent circuit diagram SMA (Ta=25°C) Specification min typ max 250 ±100 100 2.0 4.0 2.5 5.0 0.4 0.5 450 280 20 30 55 75 1.0 1.5 600 Symbol V V A ±15 (PW≤1ms, Du≤1%) A 55 mJ 4 (Ta=25°C, with all circuits operating, without heatsink) W 35 (Tc=25°C,with all circuits operating, with infinite heatsink) W 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 150 °C –40 to +150 °C ••• Unit Conditions V nA µA V S Ω pF pF ns ns ns ns V ns ID=100µA, VGS=0V VGS=±20V VDS=250V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD 100V, RL=28.6Ω, VGS=10V, see Fig. 3 on page 16. ISD=7A, VGS=0V ISD=±100mA 1 2 8 9 4 3 6 7 11 10 5 12 Characteristic curves ID-VDS Characteristics (Typical) 7 RDS(ON)-ID Characteristics (Typical) (VDS=10V) 7 6V 10V 6 ID-VGS Characteristics (Typical) (VGS=10V) 0.5 5.5V 6 0.4 3 (ON) 3 4.5V 1 VGS=4V 2 4 0.2 2 1 0 0 0.3 6 8 0 0 10 VDS (V) 2 TC=– 40°C 2 4 RDS 5V 125 °C 25° C 4 (Ω) 5 ID (A) ID (A) 5 0.1 4 6 0 0 8 1 2 3 Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) (VDS=10V) 5 6 7 Capacitance-VDS Characteristics (Typical) ID=3.5A VGS=10V 1.0 10 4 ID (A) VGS (V) VGS=0V f=1MHz 2000 1000 0.8 (Ω) (ON) RDS Re (yfs) (S) °C 40 =– TC 5°C 2 C 5° 12 500 Capacitance (pF) 5 0.6 0.4 1 5 0.1 0.5 1 0 –40 5 7 0 50 TC (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) 30 (1 sh ot ) 25 20 ite fin In 1 ith ID (A) 50 With Silicone Grease Natural Cooling All Circuits Operating 35 He 0.5 15 k in s at 2 40 W 3 RDS (ON) LIMITED 30 40 1m s 10 m s 20 PT-Ta Characteristics 10 0µ s 5 10 VDS (V) ID (pulse) max 5 4 150 (TC=25°C) 10 Crss 2 0 PT (W) 20 6 IDR (A) 100 ID (A) 7 VGS=0V 10 5.10V 1 5 Without Heatsink 0.1 0.5 1.0 VSD (V) 136 50 10 0.2 0 0 Coss 100 0.5 0.3 0.05 Ciss 1.5 0.05 3 0 5 10 50 VDS (V) 100 500 0 50 100 Ta (°C) 150 Package Type (Dimensions) • SIP 8 (STA8Pin) • SIP 10 (STA10Pin) 20.4 max 9.0 ± 0.2 11.3 ± 0.2 b a 0.5 ± 0.15 C1.5 ± 0.5 4.0 ± 0.2 4 5 6 7 1 E 8 2 B 3 C 4 B 5 C 6 B 7 C 8 9 10 B C E • SIP 15 (SMA15Pin) 4.0 ± 0.2 31.0 ± 0.2 4.0 ± 0.2 2.5 ± 0.2 b a R-End (10.4) 2.4 a 1.46 ± 0.15 0.65 +0.2 0.85 ‒0.1 2.54 0.55 27.94 +0.2 ‒0.1 1.2 2.5 ± 0.2 b 10.2 ± 0.2 31.0 ± 0.2 +0.2 ‒0.1 * 1.15 * 14 ×P2.03 ± 0.7= 28.42 ±1.0 ± 0.1 +1.0 Pin No. • SIP 12 (SMA12Pin) 3 9.7 ‒0.5 2 (3.0) 6.7 ± 0.5 0.5 ± 0.15 7 ×P2.54 = 17.78 1.2 ± 0.2 a: Part Number b: Lot No. 9 × 2.54 = 22.86 ± 0.25 C1.5 ± 0.5 1 10.2 ± 0.2 (2.54) 0.5 ± 0.15 (2.54) 0.5 ± 0.15 4.0 ± 0.2 1.0 ± 0.25 1.0 ± 0.25 1.2 ± 0.2 4.7 ± 0.5 4.7 ± 0.5 9.0 ± 0.2 11.3 ± 0.2 2.5 max 2.3 ± 0.2 25.25 ± 0.2 +0.2 0.55 ‒0.1 * 4.0 +0.2 ‒0.1 ± 0.7 a: Part Number b: Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 15 with Fin (SLA15Pin) 1.7 ± 0.1 13.0 a 2.45 ± b Pin1 12 +0.2 0.65 ‒0.1 +0.2 1.2 1.45 ± 0.15 ± 0.15 11 × P2.54 ± 0.7= 27.94 ± 1.0 0.85 ‒0.1 0.55 +0.2 ‒0.1 a: Part Number b: Lot No. 2.2 ± 0.7 * 14 ×P2.03 ± 0.7 * 4.8 ± 0.2 +0.2 =28.42 ± 1.0 1.15 ‒0.1 0.2 +1.0 16.4 1.7 ± 0.1 13.0 ± 0.2 4.8 ± 0.2 9.9 ± 0.2 ± 0.2 24.4 ± 0.2 ± 0.2 R-End 2.7 9.5min 16.0± 0.2 φ 3.2 31.0 ± 0.15 φ 3.2 ± 0.15×3.8 31.0 ± 0.2 24.4 ± 0.2 Ellipse 3.2 ± 0.15×3.8 ± 0.2 16.0 ± 0.2 31.5max 31.3 ± 0.2 0.15 9.7 ‒0.5 φ 3.2 ± (3.0) 6.7 ± 0.5 • SIP 12 with Fin (SLA12Pin) +0.2 0.55 ‒0.1 * 4.0 ± 0.7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 • SIP 21 with Fin (SLA21Pin) 31.0 ± 0.2 24.4 ± 0.2 16.4 ± 0.2 φ 3.2 ± 0.15× 3.8 4.8 ± 1.7 ± 17.9 ± (5) b 12.9 ± 0.2 a 16± 0.2 0.15 9.9 ± 0.2 φ 3.2 ± 0.6 Gate burr 0.2 0.1 2.45 ± 0.2 4‒(R1) +0.2 0.5 0.65 ‒0.1 3± 20 ×P1.43± 0.5 =28.6± 1.0 31.3 ± 0.2 1 190 2 Transistors 3 4 5 6 7 9 11 13 15 17 19 21 8 10 12 14 16 18 20 a: Part Number b: Lot No. +0.2 0.55 ‒0.1 4 ± 0.7 (Unit:mm)