STD01N

STD01N and STD01P Darlington Transistors for Audio Amplifiers Description ▪ Built-in temperature compensation diodes ▪ High power (100 W) handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes, reducing external component count and simplifying circuit design ▪ NPN and PNP versions ▪ Emitter terminals placed symmetrically, pin 5 on NPN and pin 1 on PNP models, allowing adjacent placement on PCB to minimize trace length and output skew when used in pairs ▪ Approved by major manufacturers The STD01N and STD01P are enhanced Darlington transistors with built-in drivers and temperature compensation diode. Manufactured using the unique Sanken thin-wafer production technology, these devices achieve higher power levels through decreased thermal resistance, and can withstand higher voltages than similar devices on the market. ns Features and Benefits ew D es ig The temperature compensation diode is integrated on the same chip as the power transistors. By this design, the STD01N and STD01P eliminate delays that would otherwise be induced between thermal sensing at the heat source, and the operation of the compensation circuitry. Thus, these transistors are ideal for applications where enhanced thermal stability is required. This device is provided in a 5-pin TO-3P plastic package with pin 4 removed. Contact Sanken™ for application support and additional information on device performance. rN Package: 5 pin TO-3P (MT-100) Applications include: STD01P m en STD01N de d fo ▪ General amplifier applications ▪ Professional audio amplifiers ▪ Car audio amplifiers 1 2 3 4 5 Not to scale 1 2 3 4 5 Equivalent Circuits STD01N 3 4 STD01P 1 N ot R ec o m Emitter pins symmetrical 1 5 2 5 3 Datasheet 28104.011 STD01N and STD01P Darlington Transistors for Audio Amplifiers SELECTION GUIDE Type STD01N* hFE Rating Range O: 5000 to 12000 NPN STD01P* Packing Range Y: 8000 to 20000 Bulk, 100 pieces Range O: 5000 to 12000 PNP Range Y: 8000 to 20000 ns Part Number es ig *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. Rating Unit VCBO 150 V VCEO 150 V VEBO 5 V IC 10 A IB 1 Collector-Base Voltage1 Collector-Emitter Voltage1 Emitter-Base Voltage1 Collector Current1 Base Current1 A 100 IF 10 Junction Temperature TJ 150 °C Storage Temperature Tstg –55 to150 °C d PNP type (STD01P), voltage and current values are negative. 2T = 25°C. C en 1For W mA de Collector Power fo PC Diode Forward Current Dissipation2 ew Symbol rN Characteristic D ABSOLUTE MAXIMUM RATINGS at TA = 25°C m ELECTRICAL CHARACTERISTICS at TA = 25°C Current1 Emitter Cutoff Current1 Collector-Emitter Voltage1 R DC Current Transfer Ratio2,3 Collector-Emitter Saturation Voltage1 ot Base-Emitter Saturation Voltage1 N Base-Emitter Voltage Diode Forward Voltage Test Conditions Min. Typ. Max. Unit ICBO VCB = 150 V – – 100 μA IEBO VEB = 5 V – – 100 μA VCEO IC = 30 mA 150 – – V hFE VCE = 4 V, IC = 6 A 5000 – 20000 – VCE(sat) IC = 6 A, IB = 6 mA – – –2.0 V VBE(sat) IC = 6 A, IB = 6 mA – – –2.5 V STD01N VCE = 20 V, IC = 40 mA – 1220 – mV STD01P VCE = –20 V, IC = –40 mA – 1230 – mV STD01N IF = 2.5 mA – 705 – mV STD01P IF = 2.5 mA – 1580 – mV ec o Collector-Cutoff Symbol m Characteristic VBE VF 1For PNP type (STD01P), voltage and current values are negative. rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y). 3When the transistor is used in pairs, the following conditions must be satisfied: Total V ≤ Total V F BE of the transistors (the above measurement conditions shall be applied), and ∆V = 0 to 500 mV. 2h FE All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature of +25°C, unless otherwise stated. Sanken Electric Co., Ltd. 3-6-3 Kitano, Niiza-shi, Saitama-ken 352-8666, Japan Phone:+81-48-472-1111 http://www.sanken-ele.co.jp 2 STD01N and STD01P Darlington Transistors for Audio Amplifiers 10 mA 10 2. 0m A STD01N Performance Characteristics at TA = 25°C 1.5 A m 3 A 1.0 m A 0.8 m IC (A) IC vs. VCE VCE(sat) vs. IB 0.3 mA 4 2 8A 6A IC= 4 A ns 0.5 mA 6 VCE(sat) (V) 8 1 es ig IB= 0.2 mA 2 0 0 2 4 0 0.0001 6 VCE = 4 V Continuous fo °C C –30° C 0.5 1.0 1.5 VBE (V) 2.0 2.5 m Single pulse No heatsink Natural cooling TA=25° 1000 1.0 IC (A) m 100 1 10 0 m 0 s DC ms 10.0 R 0.1 1.0 VF (V) 1.5 1 2.0 10 VCE (V) N 100 80 ith W 1.00 ite in k in ts ea H PC vs. TA 0.10 PC (W) 60 f In RθJA (°C/W) 100 0.01 0.5 10.00 RθJA vs. t 10 100.0 Safe Operating Area ec o IF (mA) ot 0 1 IC (A) en 10 102 0.1 de 0 C 125° 25°C C –30° 104 103 d 25° 125 2 1 hFE rN IC (A) hFE vs. IC 4 IF vs. VF For Diode 1 105 6 0 0.1 ew 8 VCE = 4 V Continuous 0.01 IB (A) 106 10 IC vs. VBE 0.001 D VCE (V) 40 20 0.01 3.5 1 10 t (ms) 100 1000 0 Without Heatsink 0 25 50 Sanken Electric Co., Ltd. 3-6-3 Kitano, Niiza-shi, Saitama-ken 352-8666, Japan Phone:+81-48-472-1111 http://www.sanken-ele.co.jp 75 100 TA (°C) 125 150 3 STD01N and STD01P Darlington Transistors for Audio Amplifiers STD01P Performance Characteristics at TA = 25°C A A 0.8 mA –IC (A) 8 IC vs. VCE 3 1.0 mA m 0.5 mA 6 VCE(sat) vs. IB 0.3 mA 4 2 ns 1.5 –VCE(sat) (V) 2. 0m 10 mA 10 8A 6A –IC = 4 A –IB= 0.2 mA 0 0 2 4 0 0.0001 6 –VCE (V) 106 ew 10 8 0.5 1.0 1.5 –VBE (V) 2.5 m Single pulse No heatsink Natural cooling TA=25° 1000 1.0 IC (A) m 100 1 10 0 m 0 s DC ms 10.0 R 2.0 1 2.5 10 –VCE (V) N 100 80 ith W 1.00 fin ite si at He PC vs. TA 40 nk 0.10 PC (W) 60 In RθJA (°C/W) 100 0.1 1.0 1.5 VF (V) 10.00 RθJA vs. t 10 100.0 Safe Operating Area ec o IF (mA) 1 0.01 0.5 ot 0 C –30° –IC (A) en 2.0 104 102 0.1 de 0 10 1 1 103 d 25°C –30° C °C 125 fo –VCE = 4 V Continuous 2 IF vs. VF For Diode hFE hFE vs. IC 4 0 0.1 C 125° 25°C rN –IC (A) –VCE = 4 V Continuous 0.01 –IB (A) 105 6 IC vs. VBE 0.001 D 2 es ig 1 20 0.01 3.5 1 10 t (ms) 100 1000 0 Without Heatsink 0 25 50 75 100 TA (°C) Sanken Electric Co., Ltd. 3-6-3 Kitano, Niiza-shi, Saitama-ken 352-8666, Japan Phone:+81-48-472-1111 http://www.sanken-ele.co.jp 125 150 4 STD01N and STD01P Darlington Transistors for Audio Amplifiers PACKAGE OUTLINE DRAWING, TO-3P STD01P Terminal Configuration 4.8 ±0.2 +0.2 1.34 –0.1 +0.2 +0.1 1.7 ±0.1 Terminal dimension at case surface +1 20.5 –0.5 fo 1.74 –0.1 3.2 –0.2 D rN 3 MAX XXXXXXXX XXXXXXXX (35.4) 14.9 ±0.2 Branding +0.2 –0.1 es ig 2 ew Gate Burr ns 2 ±0.2 15.6 ±0.3 19.9 ±0.3 STD01N Terminal Configuration +0.2 en de d 1.05 –0.1 m m 4×P2.54 ±0.1 = (10.16) Terminal dimensions at case surface 3 4 5 4×P2.54 ±0.6 = 10.16 ±0.8 Terminal dimension at lead tips 15.8 ±0.2 ec o R 2 ot 1 1 2 3 4 5 N Gate burr: 0.3 mm (max.), mold flash may appear at opposite side Terminal core material: Cu Terminal treatment: Ni plating and solder dip Heat sink material: Cu Heat sink treatment: Ni plating Leadform: 2804 Weight (approximate): 6.0 g Dimensions in millimeters +0.2 0.65 –0.1 Branding codes (exact appearance at manufacturer discretion): 1st line, type: STD01X Where: X is the transistor type (N or P) 2nd line, lot: YMDD H Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D) DD is the 2-digit date H is the hFE rating (O or Y; for values see footnote, Electrical Characteristics table) Leadframe plating Pb-free. Device composition includes high-temperature solder (Pb >85%), which is exempted from the RoHS directive. Sanken Electric Co., Ltd. 3-6-3 Kitano, Niiza-shi, Saitama-ken 352-8666, Japan Phone:+81-48-472-1111 http://www.sanken-ele.co.jp 5 STD01N and STD01P Darlington Transistors for Audio Amplifiers WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Precautions must be taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment. ns The use of an isolation transformer is recommended during circuit development and breadboarding. de d fo rN ew D es ig Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage • Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. • Avoid locations where dust or harmful gases are present and avoid direct sunlight. • Reinspect for rust in leads and solderability of products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. Remarks About Using Silicone Grease with a Heatsink • When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce stress. • Volatile-type silicone greases may produce cracks after long periods of time, resulting in reduced heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink. • Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Suppliers en Type G746 Shin-Etsu Chemical Co., Ltd. Dow Corning Toray Silicone Co., Ltd. m SC102 Toshiba Silicone Co., Ltd. m YG6260 ot R ec o Heatsink Mounting Method • Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame. To avoid these problems, observe the recommended tightening torques for this product package type, TO-3P (MT-100): 0.686 to 0.882 N•m (7 to 9 kgf•cm). • Diameter of Heatsink Hole: < 4 mm. The deflection of the press mold when making the hole may cause the case material to crack at the joint with the heatsink. Please pay special attention for this effect. N Soldering • When soldering the products, please be sure to minimize the working time, within the following limits: 260±5°C 10 s 350±5°C 3 s • Soldering iron should be at a distance of at least 1.5 mm from the body of the products Electrostatic Discharge • When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ of resistance to ground to prevent shock hazard. • Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. • When using measuring equipment such as a curve tracer, the equipment should be grounded. • When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products. • The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil. Sanken Electric Co., Ltd. 3-6-3 Kitano, Niiza-shi, Saitama-ken 352-8666, Japan Phone:+81-48-472-1111 http://www.sanken-ele.co.jp 6 STD01N and STD01P de d fo rN ew D es ig ns Darlington Transistors for Audio Amplifiers en The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. m Sanken reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. ec o m When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. R Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. N ot Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken assumes no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or any third party that may result from its use. Copyright © 2007 Sanken Electric Co., Ltd. Sanken Electric Co., Ltd. 3-6-3 Kitano, Niiza-shi, Saitama-ken 352-8666, Japan Phone:+81-48-472-1111 http://www.sanken-ele.co.jp 7 Darlington Transistors for Audio Amplifiers STD01N and STD01P August, 2007 Asia Pacific China es ig D ew Sanken Electric (Shanghai) Co., Ltd. Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757 ns Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494 rN India d fo Saket Devices Pvt. Ltd. Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India Tel: 91-20-5621-2340 91-20-2528-5449 Fax: 91-20-2528-5459 de Japan m en Sanken Electric Co., Ltd. Overseas Sales Headquaters Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan Tel: 81-3-3986-6164 Fax: 81-3-3986-8637 m Korea Singapore R ec o Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145 N ot Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720 Tel: 65-6291-4755 Fax: 65-6297-1744 Taiwan Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261 Sanken Electric Co., Ltd. T02-012EA-070820 Darlington Transistors for Audio Amplifiers STD01N and STD01P August, 2007 Europe United Kingdom ns Sanken Power Systems (UK) Limited Pencoed Technology Park Pencoed, Bridgend CF35 5HY. UK Tel: 44-1656-869-100 Fax: 44-1656-869-162 es ig North America ew fo N ot R ec o m m en de d Allegro MicroSystems, Inc. (Southern California) 14 Hughes Street, Suite B105, Irvine, CA 92618 Tel: 1-949-460-2003 Fax: 1-949-460-7837 rN Allegro MicroSystems, Inc. 115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000 Fax: 1-508-853-3353 D United States Sanken Electric Co., Ltd. T02-012EA-070820