THYRISTOR( Surface Mount Device/Non-isolated)
SMG8C60H
Thyristor SMG8C60H is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation.
Typical Applications
● ●
(0.9)
TO-263
(7.0) (4.0)
Home Appliances : Electric Blankets, Starter for FL, other control applications Industrial Use : SMPS, Solenoid for Breakers, Motor Controls, Heater Controls, other control applications
10.4 0.3 ±
10 0.3 ± (0.4) (6.91)
4.5 0.2 ± 1.3 0.2 ±
(
RO 2×
.4
5)
9.2 0.3 ± 1.4 0.5 ±
Features
2.36 0.15 ±
1
2
3
1
2.4 0.2 ±
IT(AV)=8A ● High Surge Current ● Low Voltage Drop ● Lead-Free Package
●
4.9 0.5 ±
1.27 0.2 ±
3
2.54 0.15 ±
0.5 0.15 ± 2.5 0.2 ±
0.8 0.15 ± 2.54 0.25 ± 5.08 0.5 ±
2
1K 2A 3 Gate
Identifying Code:S8C6H
Unit:mm
■Maximum Ratings
Symbol VRRM VRSM VDRM IT AV) ( IT RMS) ( ITSM I2t PGM
( PG AV)
(Tj=25℃ unless otherwise specified)
Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Average On-State Current R.M.S. On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Forward) ( Peak Gate Voltage Reverse) ( Operating Junction Temperature Storage Temperature Mass
Reference
Ratings 600 720 600
Unit V V V A A A A2S W W A V V ℃ ℃ g
Single phase, half wave, 180°conduction, Tc=102℃ , Single phase, half wave, 180°conduction, Tc=102℃ , 50Hz/60Hz,
1 / 2
8 12.6 80/88 72 5 0.5 2 6 10 −40∼+125 −40∼+150 1.2
cycle Peak value, non-repetitive
IFGM VFGM VRGM Tj Tstg
■Electrical Characteristics
Symbol IDRM IRRM VTM IGT VGT VGD IH
( Rth j-c)
Item Repetitive Peak Off-State Current Repetitive Peak Reverse Current Peak On-State Voltage Gate Trigger Current Gate Trigger Voltage Non-Trigger Gate Voltage Holding Current Thermal Resistance
Reference Tj=125℃, VD=VDRM Tj=125℃, VR=VRRM IT=25A, Inst. measurement VD=6V, RL=10Ω Tj=125℃, VD=1 2VDRM / Junction to case
Ratings Min. Typ. Max. 2 2 1.5 10 1.4 0.2 15 2
Unit mA mA V mA V V mA ℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
(7.2)
SMG8C60H
1 0
Gate Characteristics
VFGM 6 ( V) PGM 5 ( W)
10 00
On-State Voltage Max
T= 5 j2 ℃ T= 2 ℃ j1 5
PG ( . W) (AV) 0 5 IFGM 2 ( A)
1
2℃ 5
On-State Current A) (
100 00
Gate Voltage (V)
10 0
1 0
VGD 02 ( . V)
01 . 1
1 0
10 0
10 00
1 05 .
1
15 .
2
25 .
3
Gate Current mA) (
On-State Voltage (V)
1 2
Average On-State Current vs Power Dissipation (Single phase half wave)
θ1 0 =8゜ θ1 0 =2゜ θ9 ゜ =0
10 3
Average On-State Current vs Ambient Temperature (Single phase half wave)
0 π θ 30 6゜ 2π
Power Dissipation (W)
1 0 8 6 4
θ3 ゜ =0 θ6 ゜ =0
Ambient Temperature (℃)
15 2 10 2 15 1 10 1 15 0 10 0
θ3 ゜ =0 θ6 ゜ =0
θ Conduction Angle :
0
π θ 30 6゜
2π
2 0 0
θ9 ゜ θ 1 0 =0 =2゜
θ1 0 =8゜
θ Conduction Angle :
9 5 9 0 0 1 2 3 4 5 6 7 8 9
1
2
3
4
5
6
7
8
9
Average On-State Current (A)
Average On-State Current (A)
10 4
Transient Thermal Impedance (℃/W)
Surge On-State Current Rating (Non-Repetitive)
1 0
Maximum Transient Thermal Impedance Characteristics
Surge On-State Current A) (
10 2 10 0 8 0 6 0 4 0 2 0 0 1 1 0 10 0
6 Hz 0 5 Hz 0
1
01 . 00 .1
01 .
1
1 0
10 0
Time (Cycles)
Time (sec.)
10 00
IGT −Tj [Change Rate] (Typical)
Gate Trigger Voltage (V)
−5 2 0 2 5 5 0 7 5 10 0 15 2
1 09 . 08 . 07 . 06 . 05 . 04 . 03 . 02 .
VGT −Tj (Typical)
IGT (t℃) ×100 (%) IGT 2 ℃) (5
10 0
1 0 −0 5
01 . 0 −0 5
−5 2
0
2 5
5 0
7 5
10 0
15 2
Junction Temp. (℃)
Junction Temp. (℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
SMG8C60H
150 140
VD −Tj Change Rate (Typical)
150 140
VR −Tj Change Rate (Typical)
VD t℃) ( ×100 (%) VD 2 ℃) (5
120 110 100 90 80 70 60 50 −0 5 −5 2 0 2 5 5 0 7 5 10 0 15 2
V(t℃) R ×100 (%) V( 5 R 2 ℃)
130
130 120 110 100 90 80 70 60 50 −0 5 −5 2 0 2 5 5 0 7 5 10 0 15 2
Junction Temp. (℃)
Junction Temp. (℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com
很抱歉,暂时无法提供与“SMG8C60H”相匹配的价格&库存,您可以联系我们找货
免费人工找货