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TMG5C80

TMG5C80

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    TMG5C80 - TRIAC(Through Hole/Non-isolated) - SanRex Corporation

  • 数据手册
  • 价格&库存
TMG5C80 数据手册
TRIAC(Through Hole / Non-isolated) TMG5C80 Triac TMG5C80 is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. 2.98 ±0.44 10.10 + 0.18 − 0.44 TO-220AB 4.5 + 0.2 − 0.1 1.27 ±0.12 Typical Applications 2 Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro Wave Ovens, Hair Dryers, other control applications ● Industrial Use : SMPS, Copier Machines, Motor Controls, Dimmer, SSR, Heater Controls, Vending Machines, other control applications ● 1 15.00 + 0.87 − 0.57 φ3 .8 8.60+ 0.30 − 0.22 3 3 2 2.48 ±0.45 13.5 ±0.8 4.23 ±0.5 1.27 ±0.13 0.85 ±0.1 0.45 + 0.15 − 0.1 1 T1 2 T2 3 Gate Features IT(RMS)=5A High Surge Current ● Low Voltage Drop ● Lead-Free Package ● ● 1 2 3 2.54 2.54 Identifying Code:T5C8 Unit:mm ■Maximum Ratings (Tj=25℃ unless otherwise specified) Symbol VDRM ( IT RMS) ITSM I2t PGM ( PG AV) IGM VGM Tj Tstg Item Repetitive Peak Off-State Voltage R.M.S. On-State Current Surge On-State Current I2t(for fusing) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Reference Tc=107℃ One cycle, 50Hz/60Hz, Peak value non-repetitive Ratings 800 5 50/55 12.6 3 0.3 2 10 −40∼+125 −40∼+150 2 Unit V A A A2S W W A V ℃ ℃ g ■Electrical Characteristics Symbol IDRM VTM + I GT1 − I GT1 + I GT3 − I GT3 + V GT1 − V GT1 + V GT3 − V GT3 VGD 〔dv/dt〕 c IH Rth Item Repetitive Peak Off-State Current Peak On-State Voltage 1 2 Gate Trigger Current 3 4 1 2 Gate Trigger Voltage 3 4 Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Reference VD=VDRM, Single phase, half wave, Tj=125℃ IT=7A, Inst. measurement Min. VD=6V,RL=10Ω Ratings Typ. Max. 1 1.4 20 20 ― 20 1.5 1.5 ― 1.5 Unit mA V mA V Tj=125℃,VD=1 2VDRM / Tj=125℃, di/dt〕=−2.5A/ms,VD=400V 〔 c Junction to case 0.2 5 10 3.0 V V/ s μ mA ℃/W Holding Current Thermal Resistance Trigger mode of the triac Mode 1 I ( + ) Mode 2 I ) ( − Mode 3 III ( + ) Mode 4 III ) ( − TMG5C80 10 0 Gate Characteristics 10 0 On-State Characteristics MAX) ( On-State Peak Current A) ( 5 0 2 0 1 0 5 2 1 05 . 02 . 05 . 10 . 15 . 20 . 25 . T= 5 j2 ℃ T= 2 ℃ j1 5 Gate Voltage (V) 1 0 VGM (10V) PGM (3W) PG (0.3W) (AV) 1 25℃ 1+GT1 1−GT1 1−GT3 VGD 0.2V) ( 01 . 1 0 IGM (2A) 10 0 10 00 100 00 30 . 35 . Gate Current mA) ( On-State Voltage (V) Power Dissipation (W) 6 5 4 3 2 1 0 0 0 θ π θ 2π θ1 0 =8゜ θ1 0 =5゜ θ1 0 =2゜ θ9 ゜ =0 θ6 ゜ =0 θ3 ゜ =0 30 6゜ θ Conduction Angle : Allowable Case Temperature (℃) 7 RMS On-State Current vs Maximum Power Dissipation 15 2 RMS On-State vs Allowable Case Temperature 10 2 θ =30゜ θ =60゜ 0 θ 30 6゜ π θ 2π 15 1 θ =90゜ θ =120゜ θ =150゜ θ =180゜ 10 1 θ Conduction Angle : 1 2 3 4 5 6 15 0 0 1 2 3 4 5 RMS On-State Current (A) RMS On-State Current (A) Transient Thermal Impedance (℃/W) 6 0 Surge On-State Current Rating (Non-Repetitive) 1 0 Transient Thermal Impedance Surge On-State Current A) ( 5 0 4 0 3 0 5 HZ 0 6 HZ 0 2 0 1 0 0 1 2 5 1 0 2 0 5 0 10 0 1 00 .1 01 . 1 1 0 10 0 Time (Cycles) Time (Sec.) IGT −Tj (Typical) 10 00 50 0 20 0 10 0 5 0 I−GT3 3−) ( I+GT1 1+) ( I−GT1 1−) ( 10 00 50 0 VGT −Tj (Typical) IGT (t℃) ×100 (%) IGT 2 ℃) (5 VGT (t℃) ×100 (%) VGT 2 ℃) (5 20 0 V−GT3 3−) ( V+GT1 1+) ( V−GT1 1−) ( 10 0 5 0 2 0 1 0 −0 5 2 0 1 0 −0 5 0 5 0 10 0 10 5 0 5 0 10 0 10 5 Junction Temp. Tj (℃) Junction Temp. Tj (℃)
TMG5C80 价格&库存

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