2SK1740

Ordering number : EN4112A 2SK1740 SANYO Semiconductors DATA SHEET 2SK1740 Features • • • • N-Channel Junction Silicon FET HF Amplifiers Low-Frequency Amplifiers Analog Switches Adoption of FBET process. Large yfs. Small Ciss Small-sized package permitting 2SK1740-applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 40 --40 10 75 250 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure Static Drain-to-Source On-State Resistance Symbol V(BR)GDS IGSS VGS(off) IDSS yfs1 yfs2 Ciss Crss NF RDS(on) Conditions IG=- µA, VDS=0V -10 VGS=--20V, VDS=0V VDS=10V, ID=100µA VDS=10V, VGS=0V VDS=10V, ID=10mA, f=1kHz VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz ID=10mA, VGS=0V Ratings min --40 --1.0 --2.0 40* 10 22 15 30 11 2.5 1.5 30 --3.0 --5.0 75* typ max Unit V nA V mA mS mS pF pF dB Ω Marking : IJ * : Pulse Test Pulse Width≤2ms. * : The 2SK1740 is classified by IDSS as follows : (unit : mA). Rank 3 4 5 IDSS 40 to 52 48 to 63 57 to 75 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1806GB SY IM AX-7275 / 62199TH (KT) / N1593TH (KOTO) 8-7275 No.4112-1/5 2SK1740 Package Dimensions unit : mm (typ) 7013A-011 2.9 0.1 0.5 3 2.5 1.5 0.5 1 0.95 2 0.4 1 : Source 2 : Drain 3 : Gate SANYO : CP 0.05 1.1 0.3 80 ID -- VDS 80 ID -- VDS Drain Current, ID -- mA 60 Drain Current, ID -- mA VGS=0V --0.5V --1.0V 60 VGS=0V --0.5V 40 40 --1.0V 20 20 --1.5V --2.0V --2.5V --1.5V --2.0V --3.0V 0 5 0 4 8 12 16 --3.0V 0 0 1 2 3 4 --2.5V 20 ITR01961 100 Drain-to-Source Voltage, VDS -- V 10 ITR01960 ID -- VDS V GS =0 V .5V Drain-to-Source Voltage, VDS -- V ID -- VGS VDS=10V 8 --0 Drain Current, ID -- mA --1 6 . --1 5V 60 SS 55 m V --2.0 =7 5m 4 40 2 40 m 20 --2.5V 0 0 0 100 200 300 400 500 ITR01962 --6 --5 --4 --3 --2 --1 0 ITR01963 Drain-to-Source Voltage, VDS -- mV Gate-to-Source Voltage, VGS -- V No.4112-2/5 Drain Current, ID -- mA .0V 80 A A A ID 2SK1740 ID -- VGS VDS=10V IDSS=60mA 80 100 6 5 VGS(off) -- IDSS VDS=10V IDSS=100µA Cutoff Voltage, VGS(off) -- V Drain Current, ID -- mA 4 60 3 25 °C 40 2 5° C --2 Ta = 7 C 5° 20 --6 --5 --4 --3 --2 --1 0 0 ITR01964 --1.0 3 4 5 7 Gate-to-Source Voltage, VGS -- V 6 5 RDS(on) -- IDSS Drain Current, IDSS -- mA 5 yfs -- IDSS = yfs2(V GS 0V) 100 ITR01965 Forward Transfer Admittance, yfs -- mS Static Drain-to-Source on State Resistance, RDS(on) -- Ω ID=10mA VGS=0V VDS=10V f=1kHz 4 3 3 2 yfs1(I =10m A) D 2 10 7 5 10 3 4 5 7 Drain Current, IDSS -- mA 100 yfs -- ID 100 ITR01966 24 3 4 5 7 Drain Current, IDSS -- mA 100 ITR01967 yfg -- ID Forward Transfer Admittance, yfs -- mS 7 5 3 2 VDS=10V f=1kHz 20 VDG=10V f=100MHz Common Gate =4 I DSS bfg, gfg -- mS 0mA 55m A 75m A g --gf 16 12 10 7 5 8 4 3 2 2 0 3 5 7 10 2 3 5 7 2 100 ITR01968 24 0 4 bfg 8 12 16 ITR01969 Drain Current, ID -- mA 28 yfg -- VDG Drain Current, ID -- mA yig -- ID 24 ID=10mA f=100MHz Common Gate --gfg big, gig -- mS 20 VDG=10V f=100MHz Common Gate gig 20 bfg, gfg -- mS 16 16 12 12 8 8 4 4 0 0 bfg big 0 4 8 12 16 ITR01970 0 4 8 12 16 ITR01971 Drain-to-Gate Voltage, VDG -- V Drain Current, ID -- mA No.4112-3/5 2SK1740 28 yig -- VDG ID=10mA f=100MHz Common Gate gig bog, gog -- mS 2.8 yog -- ID VDG=10V, f=100MHz Common Gate bog 24 2.4 20 2.0 big, gig -- mS 16 1.6 12 1.2 8 0.8 gog 4 0 0 4 0.4 big 8 12 16 ITR01972 0 0 4 8 12 16 ITR01973 Drain-to-Gate Voltage, VDG -- V 3.2 2.8 yog -- VDG bog Drain Current, ID -- mA 1.2 yrg -- ID ID=10mA f=100MHz Common Gate 1.0 VDG=10V f=100MHz Common Gate 2.4 --brg brg, grg -- mS 0.8 bog, gog -- mS 2.0 1.6 1.2 0.8 0.6 0.4 --grg gog 0.2 0.4 0 0 4 8 12 16 ITR01974 24 0 0 4 8 12 16 ITR01975 Drain-to-Gate Voltage, VDG -- V 2.8 yrg -- VDG Drain Current, ID -- mA yfg -- f 2.4 ID=10mA f=100MHz Common Gate 20 VDG=10V ID=10mA Common Gate 2.0 brg, grg -- mS bfg, gfg -- mS --brg 1.6 16 --gfg 12 1.2 8 bfg 0.8 --grg 0.4 0 0 4 0 4 8 12 16 ITR01976 20 0 200 400 600 800 1000 ITR01977 Drain-to-Gate Voltage, VDG -- V 40 Frequency, f -- MHz yig -- f yog -- f VDG=10V ID=10mA Common Gate VDG=10V ID=10mA Common Gate 16 30 bog, gog -- mS big, gig -- mS 12 gig 20 8 bo 4 g 10 gig gog 0 600 800 1000 ITR01978 0 200 400 600 800 1000 ITR01979 0 0 200 400 Frequency, f -- MHz Frequency, f -- MHz No.4112-4/5 2SK1740 5 yrg -- f VDG=10V ID=10mA Common Gate 7 5 Ciss -- VDS VGS=0V f=1MHz Input Capacitance, Ciss -- pF 4 3 2 brg, grg -- mS 3 --g 2 rg 10 7 5 1 rg --b 3 0 0 200 400 600 800 1000 ITR01980 300 2 1.0 2 3 5 7 10 2 3 5 Frequency, f -- MHz 2 Drain-to-Source Voltage, VDS -- V ITR01981 Crss -- VDS Allowable Power Dissipation, PD -- mW VGS=0V f=1MHz PD -- Ta Reverse Transfer Capacitance, Crss -- pF 10 7 5 250 200 3 2 150 100 1.0 7 5 1.0 2 3 5 7 10 2 3 5 50 0 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -- V ITR01982 Ambient Temperature, Ta -- °C ITR01983 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No.4112-5/5