2SK4210

Ordering number : ENA1517 2SK4210 SANYO Semiconductors DATA SHEET 2SK4210 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 900 ±30 10 20 2.5 190 150 --55 to +150 560 10 Unit V V A A W W °C °C mJ A Note : *1 VDD=99V, L=10mH, IAV=10A *2 L≤10mH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=10mA, VGS=0V VDS=720V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA 2.0 Ratings min 900 1.0 ±100 4.0 typ max Unit V mA nA V Marking : K4210 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2809QB TK IM TC-00002110 No. A1517-1/5 2SK4210 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, ID=5A ID=5A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=10A VDS=200V, VGS=10V, ID=10A VDS=200V, VGS=10V, ID=10A IS=10A, VGS=0V Ratings min 2.8 typ 5.6 1.0 1500 230 77 27 80 250 80 75 12 38 0.85 1.2 1.3 max Unit S Ω pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7503-004 15.6 14.0 2.6 3.5 4.8 3.2 2.0 1.6 2.0 20.0 1.0 0.6 1 23 0.6 1.4 1.3 15.0 20.0 1.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB 5.45 5.45 Switching Time Test Circuit VIN VDD=200V Avalanche Resistance Test Circuit 10V 0V L VIN ID=5A RL=40Ω D VOUT 10V 0V G 2SK4210 50Ω VDD ≥50Ω RG PW=10μs D.C.≤0.5% P.G RGS=50Ω S 2SK4210 No. A1517-2/5 2SK4210 20 18 16 ID -- VDS Tc=25°C 25 ID -- VGS VDS=20V 10 V 8V Drain Current, ID -- A 20 Tc= --25°C 25°C 15 Drain Current, ID -- A 14 12 6V 10 8 6 4 2 0 75°C 10 5 VGS=4V 0 5 10 15 20 25 IT14801 0 0 3 6 9 12 15 IT14802 Drain-to-Source Voltage, VDS -- V 3.0 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 3.5 RDS(on) -- Tc ID=5A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3.0 2.5 2.0 1.5 2.0 Tc=75°C 1.5 1.0 25°C --25°C VG 1.0 0.5 0 --50 =1 S =5 ID V, 0 .0A 0.5 0 4 5 6 7 8 9 10 IT14803 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID Case Temperature, Tc -- °C 3 2 10 7 5 3 2 1.0 7 5 3 2 IS -- VSD IT14804 Forward Transfer Admittance, | yfs | -- S VDS=10V 10 VGS=0V 5 3 2 = Tc 5°C --2 C 75° Source Current, IS -- A 7 C 25° Tc= 75°C 1.0 7 5 3 0.1 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.2 0.4 0.6 --25°C 0.8 25°C 1.0 1.2 IT14806 Drain Current, ID -- A 1000 7 IT14805 7 5 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=200V VGS=10V td(off) f=1MHz Ciss, Coss, Crss -- pF Ciss 1000 7 5 3 2 100 7 5 3 100 7 5 3 2 10 0.1 tf Coss tr td(on) Crss 2 3 5 7 1.0 2 3 5 7 10 2 3 2 0 10 20 30 40 50 IT14808 Drain Current, ID -- A IT14807 Drain-to-Source Voltage, VDS -- V No. A1517-3/5 2SK4210 10 VGS -- Qg VDS=200V ID=10A Drain Current, ID -- A 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=20A PW≤10μs 9 Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 1m ID=10A DC 10 0μ s s Operation in this area is limited by RDS(on). ms s 10 n 0m tio 10 pera o 2 1 0 0 10 20 30 40 50 60 70 80 0.1 0.1 Tc=25°C Single pulse 23 5 7 1.0 23 5 7 10 23 5 7100 23 Total Gate Charge, Qg -- nC 3.0 PD -- Ta IT14809 200 190 180 160 140 120 100 80 60 40 20 0 0 20 Drain-to-Source Voltage, VDS -- V PD -- Tc 57 1000 2 IT14810 Allowable Power Dissipation, PD -- W 2.5 2.0 1.5 1.0 0.5 0 Allowable Power Dissipation, PD -- W 0 20 40 60 80 100 120 140 160 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT14799 Case Temperature, Tc -- °C IT14800 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A1517-4/5 2SK4210 Note on usage : Since the 2SK4210 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice. PS No. A1517-5/5