3LN01S

Ordering number : EN6957A 3LN01S SANYO Semiconductors DATA SHEET 3LN01S Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 30 ±10 0.15 0.6 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off)  yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=± 8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ± 10 0.4 0.15 0.22 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 3.7 5.2 12.8 1.3 typ max Unit V µA µA V S Ω Ω Ω pF pF pF ns ns ns ns Marking : YA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 41006PE MS IM TB-00002189 / 60801 TS IM TA-1922 No.6957-1/4 3LN01S Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V Ratings min typ 1.58 0.26 0.31 0.87 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7027-004 Switching Time Test Circuit VDD=15V 1.6 0.8 VIN 0.4 4V 0V VIN PW=10µs D.C.≤1% ID=80mA RL=187.5Ω 0.4 0.2 0.3 1.6 0.5 0.5 1 2 D VOUT 3 G 0.1 0 to 0.1 0.1 MIN 1 : Gate 2 : Source 3 : Drain SANYO : SMCP 0.75 0.6 P.G 50Ω 3LN01S S 0.16 0.14 ID -- VDS V 3.5 5V 0.30 ID -- VGS --25 °C Ta= C Ta =7 5° 1.0 VDS=10V 3.0 2.0 2. V Drain Current, ID -- A V Drain Current, ID -- A 6.0 0.08 0.15 VGS=1.5V 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029 0.10 0 0 0.5 --2 5 °C 0.05 25°C 1.5 2.0 2.5 3.0 IT00030 Drain-to-Source Voltage, VDS -- V 10 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 10 RDS(on) -- ID Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 75 0.10 °C Ta=75°C V 0.20 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 7 5 ID=80mA 40mA 3 25°C --25°C 2 1.0 0.01 2 3 5 7 0.1 2 25° C VGS=4V 3 5 IT00032 0.12 4.0 V 0.25 Gate-to-Source Voltage, VGS -- V IT00031 Drain Current, ID -- A No.6957-2/4 3LN01S 10 RDS(on) -- ID VGS=2.5V 100 7 RDS(on) -- ID VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 3 2 5 Ta=75°C 25°C --25°C 3 10 7 5 3 2 Ta=75°C --25°C 25°C 2 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00033 1.0 0.001 2 3 5 7 0.01 2 3 5 IT00034 Drain Current, ID -- A 7 RDS(on) -- Ta Drain Current, ID -- A 1.0 yfs -- ID 6 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 4 3 V 40m =4.0 I D= , VGS A 80m I D= A, =2. V GS 5V Ta= -- 25°C 75°C 25°C 0.1 7 5 3 2 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 1.0 7 5 0.01 0.01 2 3 5 7 0.1 2 3 5 IT00036 IT00035 1000 IS -- VSD VGS=0V Drain Current, ID -- A SW Time -- ID 7 Source Current, IS -- A 3 2 Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=4V Ta = °C 75 °C td(off) tf tr 25 7 5 3 2 --2 5 °C 0.1 100 7 5 3 2 td(on) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 10 0.01 2 3 5 7 0.1 2 IT00038 100 7 5 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Drain Current, ID -- A 10 9 VGS -- Qg Gate-to-Sourse Voltage, VGS -- V VDS=10V ID=150mA 8 7 6 5 4 3 2 1 Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 1.0 0 2 4 6 8 10 12 14 16 18 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V IT00039 Total Gate Charge, Qg -- nC IT00040 No.6957-3/4 3LN01S 0.20 PD -- Ta Allowable Power Dissipation, PD -- W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT01961 Note on usage : Since the 3LN01S is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.6957-4/4