6HN04CH

Ordering number : ENA0526 6HN04CH SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6HN04CH Features • General-Purpose Switching Device Applications 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings 60 ±20 200 800 0.6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100μA VDS=10V, ID=100mA ID=100mA, VGS=10V ID=50mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 1.2 140 240 1.8 2.6 27 8.6 4.4 2.4 3.7 Ratings min 60 1 ±10 2.6 typ max Unit V μA μA V mS Ω Ω pF pF pF Marking : ZX Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40208PE TI IM TC-00001292 No. A0526-1/4 6HN04CH Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=200mA VDS=30V, VGS=10V, ID=200mA VDS=30V, VGS=10V, ID=200mA IS=200mA, VGS=0V Ratings min typ 13.5 11.5 81 39 1.88 0.4 0.37 0.85 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7015A-004 2.9 0.15 Switching Time Test Circuit VIN 10V 0V VDD=30V 0.6 3 0.2 PW=10μs D.C.≤1% VIN D Rg ID=200mA RL=150Ω VOUT 2.8 1.6 0.05 G 0.6 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 P.G 6HN04CH 50Ω S 0.9 0.2 Rg=1.2kΩ 200 180 160 ID -- VDS 8V 300 ID -- VGS VDS=10V 5V 4V 15V 10V 250 Drain Current, ID -- mA 140 120 100 80 60 40 20 0 0 0.1 Drain Current, ID -- mA 6V 200 VGS=3V 150 100 5° C Ta =7 0 0.5 1.0 1.5 2.0 25° C 50 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 5.5 5.0 IT11263 5.5 5.0 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V --25 °C IT11264 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4.5 4.0 3.5 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100mA 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 18 20 ID=50mA mA =50 V, I D =4 mA VGS 100 I D= V, =10 V GS 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT11265 Ambient Temperature, Ta -- °C IT11266 No. A0526-2/4 6HN04CH 7 ⏐yfs⏐ -- ID VDS=10V Forward Transfer Admittance, ⏐yfs⏐ -- S 5 3 2 1000 7 5 3 IS -- VSD VGS=0V Source Current, IS -- mA 2 100 7 5 --2 5° C Ta= 75° C 75 2 10 7 5 3 2 5 3 2 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain Current, ID -- mA 3 2 5 7 1000 IT11267 1.0 0.4 0.5 0.6 0.7 --25 0.8 0.9 7 Ta = °C 3 25° C °C 0.1 °C 25 1.0 1.1 IT11268 SW Time -- ID VDD=30V VGS=10V 7 5 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 100 7 5 3 2 Ciss, Coss, Crss -- pF td(off) 3 2 Ciss tf 10 7 Coss Crss td(on) 10 7 5 0.01 2 3 5 7 0.1 2 3 5 1.0 IT11269 7 5 tr 3 2 0 5 10 15 20 IT11270 Drain Current, ID -- A 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=200mA IDP=0.8A PW≤10μs 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 s 0μ 10 ms 1 ms s 10 Drain Current, ID -- A ID=0.2A 10 0m Operation in this area is limited by RDS(on). 0.01 0.1 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT13433 Total Gate Charge, Qg -- nC 0.8 IT11271 PD -- Ta When mounted on ceramic substrate (900mm2✕0.8mm) Drain-to-Source Voltage, VDS -- V DC e op ra tio n a= (T ) °C 25 Collector Dissipation, PD -- W 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13434 No. A0526-3/4 6HN04CH Note on usage : Since the 6HN04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2008. Specifications and information herein are subject to change without notice. PS No. A0526-4/4