6LN04MH

Ordering number : ENA0458 6LN04MH SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 6LN04MH Features • General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 60 ±10 200 800 0.6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 ±10 0.4 280 480 2.2 2.4 3.5 26 5.9 3.2 18.5 26 146 69 2.9 3.4 7.0 1.3 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns Marking : FA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71006PE MS IM TB-00002393 No. A0458-1/4 6LN04MH Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA IS=200mA, VGS=0V Ratings min typ 1.0 0.2 0.2 0.83 1.2 max Unit nC nC nC V Package Dimensions unit : mm (typ) 7019A-003 Switching Time Test Circuit VIN 2.0 0.25 0.15 4V 0V VIN 0 to 0.02 PW=10µs D.C.≤1% VDD=30V 3 2.1 1.6 D Rg ID=200mA RL=150Ω VOUT 1 0.25 0.65 2 0.3 P.G G 0.85 50Ω 6LN04MH S 0.07 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Rg=1.2kΩ 200 180 160 ID -- VDS V 6.0V 4.0V 2.0 V 1.5 V 300 ID -- VGS VDS=10V 250 Drain Current, ID -- mA 8.0 V 140 120 100 80 60 40 20 0 0 0.1 Drain Current, ID -- mA 2.5 200 150 100 Ta =7 5 0 0.5 1.0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 IT11275 Drain-to-Source Voltage, VDS -- V 10 9 8 7 6 IT11274 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 7 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 5 --25 1.5 S= V VGS=1.0V 50mA 5 4 100mA 4 3 2 1 0 0 2 4 6 8 10 IT11276 1 I D= 3 , VG 0mA °C 2.5 S= V 50 5 I D= , VG 0mA °C 25° C 2 ID=10mA 10 I D= 0m 4.0 S= A, V G V 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT11277 No. A0458-2/4 6LN04MH Forward Transfer Admittance, yfs -- mS 1000 7 5 3 yfs -- ID VDS=10V 1000 7 5 3 2 IS -- VSD VGS=0V Source Current, IS -- mA 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT11278 = Ta 75 °C 1.0 7 5 3 2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Drain Current, ID -- mA 3 2 SW Time -- ID VDD=30V VGS=4V Ciss, Coss, Crss -- pF 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Ta= 75 25° °C C --25 °C °C 25 5°C --2 100 7 5 3 2 10 7 5 3 2 IT11322 Switching Time, SW Time -- ns 1000 7 5 3 2 td(off) 10 7 5 3 2 tf 100 7 5 3 2 10 0.001 Coss Crss td(on) 2 3 5 7 0.01 2 3 tr 1.0 5 7 0.1 2 3 57 IT11279 2 1.0 7 5 0 5 10 15 20 25 30 35 40 45 50 55 60 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT11280 ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=200mA Drain Current, ID -- A IDP=800mA 10 ≤10µs 10 3 2 0.1 7 5 3 2 0.01 7 5 3 2 ID=200mA DC ms 1m 0µ s s op era 10 tio 0m n( s Operation in this area is limited by RDS(on). Ta = 25 °C ) 0.9 1.0 0.001 0.1 Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 0.7 IT11281 PD -- Ta Drain-to-Source Voltage, VDS -- V 5 7 100 IT11282 Allowable Power Dissipation, PD -- W 0.6 M 0.5 ou nt ed on 0.4 ac er am ic 0.3 bo ar d (9 00 m 0.2 m2 ! 0. 8m 0.1 0 0 20 40 60 80 100 120 m ) 160 140 Ambient Temperature, Ta -- °C IT11283 No. A0458-3/4 6LN04MH Note on usage : Since the 6LN04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No. A0458-4/4