BBL4001

Ordering number : ENA1356 BBL4001 SANYO Semiconductors DATA SHEET BBL4001 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Motor drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 74 296 2.0 35 150 --55 to +150 370 65 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=100μH, IAV=65A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V Ratings min 60 1 ±10 typ max Unit V μA μA Marking : BL4001 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N2608QA TI IM TC-00001754 No. A1356-1/5 BBL4001 Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=37A ID=37A, VGS=10V ID=37A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A IS=74A, VGS=0V Ratings min 1.2 32 53 4.7 7.0 6900 740 540 48 300 510 340 135 18 32 1.0 1.2 6.1 9.8 typ max 2.6 Unit V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7525-002 10.0 3.5 3.2 4.5 2.8 16.0 3.6 7.2 1.6 1.2 14.0 0.75 123 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 2.55 2.55 Switching Time Test Circuit VIN VDD=30V 2.4 Avalanche Resistance Test Circuit 10V 0V L VIN ID=37A RL=0.81Ω D VOUT 10V 0V BBL4001 50Ω ≥50Ω BBL4001 VDD PW=10μs D.C.≤1% G P.G 50Ω S No. A1356-2/5 BBL4001 150 ID -- VDS V8 V 6V Tc= -25°C 75°C 5°C 1.5 2.0 4V 120 120 Drain Current, ID -- A 10 90 Drain Current, ID -- A 90 60 60 30 30 0 VGS=3V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT14161 0 0 0.5 1.0 25 °C 2.5 Tc= 7 3.0 --25 ° C 3.5 4.0 25°C 4.5 IT14162 150 IT14164 1.4 IT14166 30 IT14168 Tc=25°C 150 ID -- VGS VDS=10V Drain-to-Source Voltage, VDS -- V 16 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 14 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 14 12 10 8 6 4 2 0 0 ID=37A Single pulse Single pulse 12 10 8 6 4 2 0 --50 Tc=75°C 25°C --25°C A =37 V, I D =4 V GS A =37 , ID 10V = VGS 1 2 3 4 5 6 7 8 9 10 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V 100 | yfs | -- ID IT14163 3 2 100 7 5 3 2 Case Temperature, Tc -- °C IS -- VSD Forward Transfer Admittance, | yfs | -- S 7 5 VDS=10V VGS=0V Single pulse Source Current, IS -- A 3 2 25 °C 10 7 5 3 2 1.0 0.1 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT14165 0.01 7 5 3 2 0.001 0 0.2 Tc= 7 0.4 0.6 --25° C 0.8 = Tc --2 5° C °C 75 10 7 5 3 2 1.0 7 5 3 2 5°C 25°C 1.0 1.2 Drain Current, ID -- A 1000 7 SW Time -- ID td(off) 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V VDD=30V VGS=10V Ciss, Coss, Crss -- pF 3 2 10000 7 5 3 2 f=1MHz Switching Time, SW Time -- ns 5 Ciss 3 2 tf 100 7 5 3 0.1 1000 7 5 3 2 Coss Crss tr td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT14167 100 0 5 10 15 20 25 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1356-3/5 BBL4001 10 9 VGS -- Qg VDS=30V ID=74A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=296A ID=74A 10 ms PW≤10μs 10 0μ s 8 7 6 5 4 3 2 1 0 0 50 100 150 IT14169 10 1m s μs 10 Operation in DC 0m op s this area is era tio limited by RDS(on). n 0.1 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Drain-to-Source Voltage, VDS -- V 40 PD -- Tc 5 7 100 IT14170 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 35 30 25 20 15 10 5 0 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT14158 Case Temperature, Tc -- °C IT14159 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT14160 Ambient Temperature, Ta -- °C No. A1356-4/5 BBL4001 Note on usage : Since the BBL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice. PS No. A1356-5/5