BMS4003

Ordering number : ENA1923 BMS4003 SANYO Semiconductors DATA SHEET BMS4003 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)=50mΩ (typ.) Input capacitance Ciss=680pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±30 18 72 2.0 25 150 --55 to +150 53 15 Unit V V A A W W °C °C mJ A Note : *1 VDD=60V, L=200μH, IAV=15A (Fig.1) *2 L≤200μH, Single pulse Package Dimensions unit : mm (typ) 7525-002 10.0 3.5 3.2 4.5 2.8 Product & Package Information • Package : TO-220ML(LS) • JEITA, JEDEC : SC-67, SOT-186A • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 2 16.0 7.2 MS4003 LOT No. 3.6 1.6 1.2 1 14.0 0.75 123 0.7 3 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 2.55 2.55 2.4 http://semicon.sanyo.com/en/network 21611QA TKIM TC-00002572 No. A1923-1/5 BMS4003 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr IS=18A, VGS=0V See Fig.3 IS=18A, VGS=0V, di/dt=100A/μs VDS=60V, VGS=10V, ID=18A See Fig.2 VDS=20V, f=1MHz Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, VGS=10V Ratings min 100 1 ±100 3 7.8 50 680 130 33 16 33 27 15 11.4 4.1 3.8 0.9 60 114 1.2 65 5 typ max Unit V μA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Fig.1 Avalanche Resistance Test Circuit D ≥50Ω L Fig.2 Switching Time Test Circuit 10V 0V VIN VDD=60V ID=9A RL=6.7Ω D VDD PW=10μs D.C.≤1% G VOUT G S BMS4003 VIN 10V 0V 50Ω P.G 50Ω S BMS4003 Fig.3 Reverse Recovery Time Test Circuit D L S VDD BMS4003 G Driver MOSFET No. A1923-2/5 BMS4003 36 32 28 ID -- VDS Tc=25°C 15 V 36 32 ID -- VGS VDS=10V 10 V 8V Drain Current, ID -- A 28 24 20 16 Drain Current, ID -- A 24 20 16 12 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT16318 8 0 0 1 2 3 4 25 °C 4 5 Tc=7 5°C --25° C 6 7 VGS=6V 12 8 9 10 Drain-to-Source Voltage, VDS -- V 160 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 160 RDS(on) -- Tc IT16319 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 80 ID=9A Single pulse Single pulse 140 120 100 80 60 40 20 0 --50 Tc=75°C 60 25°C 40 20 0 V, =10 V GS 9A I D= --25°C 0 2 4 6 8 10 12 14 IT16320 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 | yfs | -- ID Case Temperature, Tc -- °C 100 7 5 3 2 IS -- VSD IT16321 Forward Transfer Admittance, | yfs | -- S VDS=10V VGS=0V Single pulse C 25° -Tc= 25°C Source Current, IS -- A 10 7 5 3 2 Tc=7 5°C 25°C 0 0.2 0.4 0.6 0.1 7 5 3 2 0.01 0.8 1.0 1.2 IT16323 Drain Current, ID -- A 1000 7 5 SW Time -- ID 5 7 100 IT16322 VDD=60V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V --25°C 75° C 1.0 7 5 3 2 f=1MHz Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT16324 tf Coss td(off) tr 100 7 5 3 2 10 td(on) Crss 0 5 10 15 20 25 30 IT16325 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1923-3/5 BMS4003 10 9 VGS -- Qg VDS=60V ID=18A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 IT16326 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=72A (PW≤10μs) ID=18A 10 DC 10 0m s tio 0μ s 10 μs 1m s s m 10 op era n Operation in this area is limited by RDS(on). 0.01 0.1 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Drain-to-Source Voltage, VDS -- V 30 PD -- Tc 5 7 100 IT16327 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 25 20 1.5 15 1.0 10 0.5 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT16328 Case Temperature, Tc -- °C IT16329 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16330 No. A1923-4/5 BMS4003 Note on usage : Since the BMS4003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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