CPH5501

Ordering number:ENN6257 PNP Epitaxial Planar Silicon Transistor CPH5501 DC/DC Converter Applications Applications · Relay drivers, motor drivers, strobes. Package Dimensions unit:mm 2162 [CPH5501] 2.9 5 4 3 0.6 0.2 Features · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · The CPH5501 consists of two chips which are equivalent to the 2SA1338 and the CPH3105, respectively. · Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR1] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [TR2] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC Tj Tstg VCBO VCEO VEBO IC ICP PC Tj Tstg Symbol Conditions 0.4 1 : Collector (TR1) 2 : Collector (TR2) 3 : Base (TR2) 4 : Emitter Common 5 : Base (TR1) SANYO : CPH5 0.2 0.7 0.9 Ratings –60 –50 –5 –500 –800 0.2 150 –55 to +150 –50 –50 –6 –3 –6 –600 Unit V V V mA mA W ˚C ˚C V V V A A mA W ˚C ˚C Mounted on a ceramic board (600mm2×0.8mm) 0.9 150 –55 to +150 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13100TS (KOTO) TA-2356 No.6257–1/6 CPH5501 Electrical Characteristics at Ta = 25˚C Parameter [TR1] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [TR2] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time ICBO IEBO hFE1 hFE2 fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) VCB=–40V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–100mA VCE=–2V, IC=–3A VCE=–10V, IC=–500mA VCB=–10V, f=1MHz IC=–1A, IB=–50mA IC=–2A, IB=–100mA –60 –50 –6 30 230 15 200 40 360 24 –100 –185 –0.88 –200 –500 –1.2 MHz pF mV mV V V V V ns ns ns –1 –1 560 µA µA ICBO IEBO hFE fT Cob VCE(sat) VCB=–40V, IE=0 VEB=–4V, IC=0 VCE=–5V, IC=–10mA VCE=–10V, IC=–50mA VCB=–10V, f=1MHz IC=–100mA, IB=–10mA IC=–100mA, IB=–10mA –60 –50 –5 70 400 50 100 200 5.6 0.15 0.8 0.4 1.2 –0.1 –0.1 560 MHz pF V V V V V ns ns ns µA µA Symbol Conditions Ratings min typ max Unit VBE(sat) V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–100µA, RBE=∞ V(BR)EBO ton tstg tf IE=–10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IC=–2A, IB=–100mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IE=–10µA, IC=0 ton tstg tf See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Electrical Connection B1 EC B2 Tr1 Tr2 C1 C2 Switching Time Test Circuit [TR1] PW=10µs D.C.≤1% INPUT RB VR 50Ω + 100µF 5V + 470µF VCC=–20V IB1 IB2 OUTPUT [TR2] PW=20µs D.C.≤1% INPUT IB1 IB2 OUTPUT RL VR10 50Ω RB + 100µF + 470µF RL –10IB1=10IB2=IC=–100mA 5V –25V –10IB1=10IB2=IC=–1A No.6257–2/6 CPH5501 --100 IC -- VCE 0µ A [TR1] --20 --18 IC -- VCE -60µA [TR1] -7 0 --90 -50 A 0µ Collector Current, IC – mA Collector Current, IC – mA --80 --70 --60 --50 --40 --30 --20 --10 0 0 -600µA -400µA -300µA A -50µ A -40µ -30µ A --16 --14 --12 --10 --8 --6 --4 --2 -200µA -20µA -100µA -10µA IB=0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --5 --10 --15 --20 --25 --30 IB=0 --35 --40 Collector-to-Emitter Voltage, VCE – V --120 IT00010 IC -- VBE Collector-to-Emitter Voltage, VCE – V 2 IT00011 [TR1] VCE=-5V hFE -- IC [TR1] VCE=-5V --100 1000 7 Collector Current, IC – mA DC Current Gain, hFE --80 5 3 2 Ta=75°C 25°C -25°C --60 --40 100 7 5 -25 °C Ta= 7 --20 5°C C 25 ° 3 --0.9 --1.0 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 IT00015 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Base-to-Emitter Voltage, VBE – V --10 5 IT00013 VCE(sat) -- IC Collector Current, IC – mA --10 7 [TR1] IC / IB=10 VBE(sat) -- IC [TR1] IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) – V 3 2 --1.0 5 3 2 --0.1 5 3 2 --0.01 5 --1.0 2 3 5 --10 2 3 5 --100 2 3 Base-to-Emitter Saturation Voltage, VBE(sat) – V 5 3 2 --1.0 7 5 3 Collector Current, IC – mA 3 2 5 --1000 IT00020 5 --0.1 2 3 5 --10 2 3 5 --100 2 3 Cob -- VCB Collector Current, IC – mA 1000 7 5 --1000 IT00023 [TR1] f=1MHz f T -- IC [TR1] VCE=-10V Gain-Bandwidth Product, f T – MHz 5 3 2 Output Capacitance, Cob – pF --10 7 5 100 7 5 3 2 3 2 --1.0 7 --1.0 2 3 5 7 --10 2 3 5 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector-to-Base Voltage, VCB – V IT00018 Collector Current, IC – mA 5 7 --1000 IT00017 No.6257–3/6 CPH5501 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 --10 2 3 5 7 --100 2 3 5 7 SW Time -- IC [TR1] --1000 7 5 ASO IC ICP [TR1] VCC=20V IC=10IB1=-10IB2 Collector Current, IC – mA Switching Time, SW Time – µs tstg 3 2 1m s 10 ms 10 0m s --100 7 5 3 2 --10 7 5 3 DC op tr tf era tio n td Ta=25°C 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC – mA 0.3 IT00025 PC -- Ta Collector-to-Emitter Voltage, VCE – V --2.0 --1.8 7 --100 IT00026 [TR1] IC -- VCE [TR2] Collector Dissipation, PC – W mA mA -40 mA -30 -20 -10m A Collector Current, IC – A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0.2 Mo un ted -8mA -6mA -4mA on a 0.1 cer am ic b oar d( 60 0m m 2 ×0 .8m m) -2mA IB=0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 IT00012 0 0 20 40 60 80 100 120 140 160 0 0 Ambient Temperature,Ta – °C --1.2 IT01304 IC -- VBE VCE=--2V Collector-to-Emitter Voltage, VCE – mV 1000 7 5 3 2 [TR2] hFE -- IC Ta=75°C [TR2] VCE=-2V --1.0 Collector Current, IC – mA DC Current Gain, hFE --0.8 100 7 5 3 2 10 7 5 3 2 25°C -25°C --0.6 --0.4 Ta=7 5° C 0 0 25° C --0.2 -25°C --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Base-to-Emitter Voltage, VBE – V --10 7 5 IT00014 Collector Current, IC – A --10 7 5 5 7 --10 IT00016 VCE(sat) -- IC [TR2] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) – V VCE(sat) -- IC [TR2] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) – V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 25° C Ta=75° C 25° C 5 Ta=7 2 3 °C °C -25 C -25° 2 3 5 7 --1.0 2 3 5 7 --10 IT00022 --0.01 --0.01 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 7 --10 IT00021 --0.01 --0.01 2 3 5 7 --0.1 Collector Current, IC – A No.6257–4/6 CPH5501 --10 7 VBE(sat) -- IC [TR2] IC / IB=50 1000 7 5 f T -- IC [TR2] VCE=-10V Base-to-Emitter Saturation Voltage, VBE(sat) – V 5 DC Current Gain, hFE 5 7 --1.0 2 3 5 7 --10 IT00024 3 2 --1.0 7 5 3 2 --0.1 --0.01 3 2 Ta=-25°C 75°C 100 7 5 3 2 5 7 --0.01 25°C 2 3 5 7 --0.1 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 100 Cob -- VCB Collector Current, IC – A 2 --10 7 5 5 7 --10 IT00017 [TR2] f=1MHz ASO [TR2] Output Capacitance, Cob – pF 7 ICP IC Collector Current, IC – A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1m s 50 10 ms 10 s 0µ 5 0µ s 3 10 0m DC s op era tio n 2 10 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB – V 1.4 --100 IT00019 7 --0.01 --0.1 Ta=25°C Single pulse Mounted on a ceramic board(600mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 PC -- Ta Collector-to-Emitter Voltage, VCE – V 5 7 --100 IT00027 [TR2] Collector Dissipation, PC – W 1.2 1.0 0.8 Mo un ted on a 0.6 0.4 cer am ic b oar d( 60 0m m 2 ×0 .8m 0.2 0 0 20 40 60 80 100 120 m) 140 160 Ambient Temperature,Ta – °C IT00028 No.6257–5/6 CPH5501 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6257–6/6