FSS107

Ordering number:ENN6447 P-Channel Silicon MOSFET FSS107 Load Switching Applications Features · Low ON resistance. · 2.5V drive. Package Dimensions unit:mm 2116 [FSS107] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Conditions Ratings –20 ±10 –8 Unit V V A A W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) –48 2.0 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=–1mA, VGS=0 VDS=–20V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–8A ID=–8A, VGS=–4V ID=–5A, VGS=–2.5V –0.4 15 25 18 26 23 37 Conditions Ratings min –20 –10 ±10 –1.3 typ max Unit V µA µA V S mΩ mΩ Marking : S107 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81000TS (KOTO) TA-2771 No.6447-1/4 FSS107 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–8A VDS=–10V, VGS=–10V, ID=–8A VDS=–10V, VGS=–10V, ID=–8A IS=–8A, VGS=0 Conditions Ratings min typ 2400 1200 600 40 350 200 240 90 8 16 –1.0 –1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --10V 0V --4V VIN ID= --8A RL=1.25Ω VIN D PW=10µs D.C.≤1% VOUT G P.G 50Ω S FSS107 V -2.5V --2. 0V --8 ID -- VDS --4.0V --10 --9 --8 ID -- VGS VDS= --10V --7 --6 --5 --6.0V Drain Current, ID – A --3.0 Drain Current, ID – A --7 --6 --5 --4 --3 --2 --4 --3 --2 --1 0 0 --8.0V VGS= --1.5V Ta= 7 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 0 0 --1.4 25° C --1.6 --1.8 --25° 5°C C --2.0 Drain-to-Source Voltage, VDS – V 70 IT01720 Gate-to-Source Voltage, VGS – V 50 IT01721 RDS(on) -- VGS Ta=25°C RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 60 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 40 50 ID= --5A 40 --8A 30 --5A, I D= .5V = --2 VGS = --4.0 , V GS V 30 20 8A I D= -- 20 10 10 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS – V IT01722 Ambient Temperature, Ta – ˚C IT01723 No.6447-2/4 FSS107 Forward Transfer Admittance, | yfs | – S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT01724 --10 yfs -- ID VDS= --10V --10 7 5 3 2 --1.0 7 5 3 2 IF -- VSD VGS=0 3 2 --0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID – A 10000 7 5 Diode Forward Voltage, VSD – V Ta=7 5 --0.1 7 5 °C 25°C -25 =Ta °C 75 °C 25 °C Forward Current, IF – A -25°C IT01725 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS -- Qg VDS= --10V ID= --8A --9 --8 --7 --6 --5 --4 --3 --2 --1 Ciss, Coss, Crss – pF 3 2 Ciss Coss 1000 7 5 3 2 Crss 100 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 0 0 10 20 30 40 50 60 70 80 90 Drain-to-Source Voltage, VDS – V 1000 7 IT01726 --100 7 5 3 2 Total Gate Charge, Qg – nC IT01727 SW Time -- ID VDD= --10V VGS= --4V td(off) Drain Current, ID – A ASO IDP= --48V 1 10 ms m s 0m s 100µs Switching Time, SW Time – ns 5 3 2 tf tr td(on) --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --8A DC op 10 er 100 7 5 3 2 10 --0.1 ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1000mm2×0.8mm) 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 23 5 7--100 IT01729 2 3 5 7 --1.0 2 3 5 Drain Current, ID – A 2.4 --10 IT01728 7 --0.01 --0.01 2 3 Drain-to-Source Voltage, VDS – V PD -- Ta Allowable Power Dissipation, PD – W 2.0 M ou nt 1.6 ed on ac er 1.2 am ic bo ar d( 0.8 10 00 m m2 ×0 0.4 .8m m ) 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – ˚C IT01730 No.6447-3/4 FSS107 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6447-4/4