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LA4587

LA4587

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    LA4587 - Preamplifier Power Amplifier for 1.5 V Headphone Stereos - Sanyo Semicon Device

  • 数据手册
  • 价格&库存
LA4587 数据手册
Ordering number: EN5204A Monolithic Linear IC LA4587M Preamplifier + Power Amplifier for 1.5 V Headphone Stereos Overview The LA4587M is a system IC that includes all of the necessary functions for a playback set on a single chip, reducing the number of external components needed. Package Dimensions unit : mm 3102-QFP48D [LA4587M] Functions . Stereo preamplifier (supports auto reverse function, . switchable between metal and normal tape) . Stereo power amplifier (OCL, mute function) . Ripple filterfunction (BTL operation in low-frequency range) . Low boost (Automatic . AMSS switch Music Select System) Power Features CC preamplifier and power amplifier inputs; anti-buzz provision. Specifications Maximum Ratings at Ta = 25 °C Parameter Maximum supply voltage Allowable power dissipation Operating temperature Storage temperature Symbol VCC max Pd max Topr Tstg Allowable power dissipation, Pd max − mW . Preamplifier has a high open-loop gain (VG = 73 dB). . Preamplifier requires no NF capacitor. . Virtual ground capacitor can be 1 µF or less. (Lower amplifier built in.) achieved having V . impedance isrequires nobycapacitor afor preventing oscillation. Ripple filter . Powerful output is obtained in low boost output = 21 mW/V = 1.2 V, f = 100 . (Pohigh-frequency cutoff capacitor is Hz). into the A built O REF SANYO : QIP48D Ambient temperature, Ta − °C Ratings 3.0 635 –10 to +60 –40 to +125 Unit V mW °C °C Conditions SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 13097HA(II)/N3095HA(II) No.5204-1/18 LA4587M Operating Conditions at Ta = 25 °C Parameter Recommended supply voltage Operating supply voltage range Symbol VCC VCC op Conditions Ratings 1.5 0.95 to 2.2 Unit V V Operation Characteristics at Ta = 25 °C, VCC = 1.2 V, f = 1 kHz, 0.775 V = 0 dBm, RL = 10 kΩ (preamplifier), RL = 16 Ω (power amplifier) Parameter [Preamplifier + Power Amplifier] Quiescent current Voltage gain (closed) [Preamplifier] Voltage gain (open) Voltage gain (closed) Maximum output voltage Total harmonic distortion Equivalent input noise voltage Interchannel crosstalk Interchannel crosstalk between F and R Ripple rejection ratio [Low Boost + Power Amplifier] VG3 VG4 VG5 VG6 PO1 PO2 THD2 CT3 VNO Rr2 VM Ri ∆VG3 Rr3 VRF VOAMSS VO = –20 dBm VO = –20 dBm, L.B. = on VO = –20 dBm, L.B. = on, f = 10 kHz VO = –20 dBm, L.B. = on, f = 100 Hz THD = 10 % THD = 10 %, f = 100 Hz, L.B. = on PO = 1 mW VO = –20 dBm, RV = 0 Ω RV = 0 Ω, BPF: 20 Hz to 20 kHz RV = 0 Ω, Vr = –30 dBm, fr = 100 Hz, 100 Hz TUNE VIN = –30 dBm, 1 KHz TUNE, mute on 20.5 20.5 24.5 30 5 13 38 50 8 23 23 27.5 34 9 21 0.5 43 35 74 10 0 39 0.93 2.55 3.60 –85 12 +1.5 25.5 25.5 30.5 38 dB dB dB dB mW mW % dB µV dB dBm kΩ dB dB V mV Symbol ICCO1 ICCO2 VGT VG0 VG1 VG2 VO max THD1 VNI CT1 CT2 Rr1 Conditions Rg = 2.2 kΩ, Rv = 0 Ω When power switch is off VO = –20 dBm, RV = 10 kΩ VO = –20 dBm VO = –20 dBm VO = –20 dBm, f = 10 kHz, metal on THD = 1 % VG = 35.5 dB/NAB, VO = 100 mV Rg = 2.2 kΩ, BPF: 20 Hz to 20 kHz Rg = 2.2 kΩ, 1 kHz TUNE, VO = –20 dBm Rg = 2.2 kΩ, 1 kHz TUNE, VO = –20 dBm Rg = 2.2 kΩ, Vr = –30 dBm, fr = 100 Hz, 100 Hz TUNE min 8 54 60 34 25.5 100 typ 15 0.1 57 73 35.5 28 210 0.1 1.3 56 78 52 max 24 5 60 Unit mA µA dB dB dB dB mV % µV dB dB dB 37 30.5 0.5 3.0 45 65 45 Voltage gain (closed) Output power Total harmonic distortion Interchannel crosstalk Output noise voltage Ripple rejection ratio Output mute voltage Input resistance Voltage gain difference [Ripple Filter ] Ripple rejection ratio Output voltage [AMSS] Operating output voltage 1.5 48 fr = 100 Hz, Vr = –30 dBm, VCC = 1.0 V, IRF = 25 mA, 2SB1295, hFE6 rank used VCC = 1.0 V, IRF = 25 mA Preout voltage when AMSS VO = 0.6 Vp-p Pin 34 is short-circuited through 270 kΩ. 33 0.89 1.80 Note: L.B. = Low boost No.5204-2/18 LA4587M Block Diagram Unit (resistance: Ω) Test Circuit Diagram Unit (resistance: Ω, capacitance: F) No.5204-3/18 LA4587M Sample Application Circuit Unit (resistance: Ω, capacitance: F) Note 1: Transistors equivalent to the 2SB1295 with hFE6 rank and upward are recommended. Note 2: C18, C23, and C26 are oscillation prevention capacitors; a polyester film or ceramic capacitor (which can guarantee the specified capacitance at operating temperatures) is recommended. No.5204-4/18 LA4587M Pin Functions Unit (resistance:Ω, capacitance: F) Pin No. 45 Pin name R.F OUT Pin voltage [V] 1.13 Internal equivalent circuit * Pin voltage is when VCC = 1.2 V Remarks 2 7 13 POWER OUT1 POWER OUTC POWER OUT2 0.6 c A 160 Ω resistor is connected between individual outputs (between pins 2 and 7, and between pins 13 and 7). 3 9 12 POWER NF REF1 POWER NF REFC POWER NF REF2 0.75 c Each power NF connection 4 8 11 POWER NF1 POWER NFC POWER NF2 0.75 c Each power NF connection. 5 10 POWER H.P1 POWER H.P2 0.75 c Grounded to VREF through a 1 kΩ resistor when low boost is on (pin 41: floating). 14 L.P2 0.75 c Low boost secondary LP connection. Continued on next page. No.5204-5/18 LA4587M Continued from preceding page. Pin No. 15 Pin name Low Boost NF Pin voltage [V] 0.75 Unit (resistance: Ω, capacitance: F) Internal equivalent circuit Remarks c Low boost amplifier NF connection. 16 18 POWER IN2 POWER IN1 0.75 c Each power input connection. c The input resistance is 10 kΩ. c An anti-buzz capacitor is built in. 17 L.P1 0.75 c Low boost primary LP. connection. 19 20 NFC2 NFC1 0.75 21 28 PRE NF1 PRE NF2 0.75 c Each preamplifier NF connection. c NF requires no capacitor. 22 27 PRE OUT1 PRE OUT2 0.45 c 200 kΩ is connected between each output pin and NF pin. Continued on next page. No.5204-6/18 LA4587M Continued from preceding page. Pin No. 23 26 Pin name METAL1 METAL2 Pin voltage [V] 0 Unit (resistance: Ω, capacitance: F) Internal equivalent circuit Remarks c Connected to GND through 3.9 kΩ in metal on mode (pin 40: floating) 24 25 AMSS IN1 AMSS IN2 0.75 c AMSS inverting input connection. c An external input resistor is required. 29 30 31 32 PRE REV IN1 PRE REV IN2 PRE FWD IN2 PRE FWD IN1 0.75 33 VREF 0.75 b Pins 29 and 30 turn on in REV mode (pin 39: GND). c Pins 31 and 32 turn on in FWD mode (pin 39: floating) c When not using the head, a bias resistor (2.2 kΩ) is required between these pins and VREF (pin 33). c An anti-buzz capacitor is built in. c VREF amplifier output. Low impedance is achieved due to the output resistor (ro = 10 Ω). c Inflow/outflow current: 200 µA max. 34 REF 0.75 c The VREF amplifier is referenced hereto. 36 AMSS OUT c Outputs a pulse waveform in accordance with the AMSS IN (pins 24 and 25) input level. Continued on next page. No.5204-7/18 LA4587M Continued from preceding page. Pin No. 37 41 Pin name POWER MUTE SW Low Boost SW Pin voltage [V] Unit (resistance: Ω, capacitance: F) Internal equivalent circuit Remarks c When pin 37 is grounded, mute is on. c When pin 41 is floating, low boost is on. 38 POWER SW c Power on when grounded. 39 40 FWD/REV SW METAL SW c When pin 39 is floating: FWD mode; when grounded: REV mode. c When pin 40 is in FL mode: metal on. 44 R.F REF 1.13 c RF is referenced hereto. An external capacitor can be used to vary RF SVRR. 46 R.F BASE 0.5 c Used for external PNP transistor base drive. No.5204-8/18 LA4587M Description of External Components .C 1 (1.0 to 10 µF): VREF amplifier is referenced to this decoupling capacitor. The VREF SVRR depends on the value of this capacitor. Note that if the capacitance is reduced, the SVRR worsens. Playback preamplifier EQ constant. Preamplifier output capacitor. AMSS input HPF capacitor. EQ constant for metal (built-in resistance 3.9 kΩ ±15%). VREF decoupling capacitor. For high-frequency noise rejection. NFC decoupling capacitor. Note that if the capacitance is reduced, the preamplifier low-frequency gain decreases. Power amplifier input capacitor (Input resistance: 10 kΩ). Capacitor for low boost LPF. The low boost gain depends on the capacitance. Boost amplifier NF capacitator. Note that if the capacitance is reduced, the low boost low-frequency gain decreases. Oscillation blocking capacitator. Power amplifier NF capacitor. Note that if the capacitance is reduced, the power amplifier low-frequency gain decreases. Bass high boost capacitor. The high gain depends on the capacitance. Oscillation blocking capacitator. RF output decoupling capacitor. (Also serves as the power supply capacitor and the oscillation blocking capacitor.) Power supply capacitor. RF is referenced to this LPF capacitor. The RF SVRR depends on the capacitance. Switching circuit smoothing capacitor. Must be adjusted according to the set timing. For preamplifier gain adjustment. Playback preamplifier EQ constant. EQ constant for metal. 10 kΩ volume control. For AMSS gain adjustment and HPF. For oscillation blocking. For switching circuit smoothing (discharge resistors). .C,C : . C , C (0.47 to 3.3 µF): .C,C: .C,C: . C (0.1 to 22 µF): . C , C (3.3 to 10 µF): . C , C (1.0 to 3.3 µF): .C ,C : . C (1.0 to 4.7 µF): . C , C , C (0.1 to 1.0 µF): . C , C , C (3.3 to 10 µF): 2 3 4 5 6 10 9 8 7 11 12 13 14 15 17 16 18 19 23 22 26 25 .C ,C : . C (100 to 2200 pF): . C (4.7 to 10 µF): . C (22 to 220 µF): . C (2.2 to 10 µF): . C , C (0.047 to 0.22 µF): .R,R : .R,R: .R,R: .R,R: .R,R: .R ,R ,R : . R , R (100 to 430 kΩ): 20 24 21 29 28 30 31 1 2 3 4 5 32 10 9 8 7 6 11 12 13 14 15 No.5204-9/18 LA4587M Operation Descprition . Low boost system Low-frequency region amplification: 12 dB/oct, high-frequency region amplification: 6 dB/oct. Phase 90 ° Phase 180 ° . Note on low boost The signals that are applied to each power input are mixed and then passed through a two-stage LPF. Because the signal levels are attenuated by the LPF, level compensation is accomplished by amplifying the signals through a low boost amplifier located in between. The phase of signals that pass through the secondary LPF is inverted relative to the input signal; these signals are then input to each power amplifier. . Note on channels 1 and 2 The positive phase signals that were input from the positive (‘‘+’’) input pins and the reverse phase signals that were input from the negative (‘‘–’’) input pins and then were passed through the secondary LPF are all input, amplified, and then output. . Note on the common amplifier The phase of the signals that passed through the secondary LPF is inverted by the inverting amplifier; the signals (with reversed phases relative to channels 1 and 2) are then input to the negative (‘‘–’’) inputs. The positive (‘‘+’’) input signals are grounded to VREF, amplified by the inverting amplifier and then output. The phase of the channel 1 and 2 amplifier outputs and the common amplifier outputs are made to oscillate with inverted phases, making it possible to obtain the dynamic range efficiently. No.5204-10/18 LA4587M Sample Application Circuits for Low Boost Switching Sample 1 Sample 2 In the above circuits, MID and MAX are switched by changing the gain of the boost amplifier. The AMSS comparator Block Diagram No.5204-11/18 LA4587M Operation Description . The input amplifiers are inverting amplifiers. The gain and HPF characteristics can be adjusted through an external C-R . (input impedance). outputs pulses for an input waveform that satisfies certain set conditions (frequency and voltage The AMSS comparator level). Input Output .When AMSS is not used, the input pins (pins 24 and 25) are connected to V Notes on the ripple filter REF (pin 33). . The RF SVRR can be adjusted by an external capacitor connected to pin 44. . It is recommended that external transistors be equivalent to the 2SB1295 with h Note on power output 3.3 µF → 39 dB 4.7 µF → 42 dB 10 µF → 47 dB FE 6 rank and upward. .The power amplifier output and the common amplifier output are connected by a resistor of approximately 160 Ω. Notes on power mute . Power mute turns off the fixed current that is supplied to the power section. . The output DC when power mute is on is the V electric potential (0.75 V). . The output impedance when power mute is on is approximately 10 kΩ. REF No.5204-12/18 LA4587M SW Pin Equivalent Circuit Diagram 1. Power switch On when power switch is grounded IO = VCC/200 k + VCC – 0.7 V/22 kΩ Pin 38 VS = 100 mV or less 2. Power mute and low boost switch On when pin 37 power mute is grounded On in pin 41 low boost switch floating mode IO = 0.1 µA or less VS = 80 mV or less * The discharge resistance for smoothing is 430 kΩ max. 3. FWD/REV, METAL switch REV when pin 39 FWD/REV is grounded On in pin 40 metal floating mode IO = 7 µA or less VS = 0.5 V or less No.5204-13/18 LA4587M VG,VGO – fi Quiescent current, ICCO — mA Preamplifier On On Open loop gain, VGo — dB Closed loop gain, VG — dB DIN AUDIO used Normal Metal Total harmonic distortion, THD — % Supply voltage, VCC — V VG, VGO – VCC Preamplifier Open-loop gain, VGo — dB Closed-loop gain, VG — dB Frequency, fi — Hz THD – VO Preamplifier to Supply voltage, VCC — V Interchannel CT − fi Supply voltage, VO — mV CT − fi between FWD/REV Crosstalk, CT — dB Preamplifier Crosstalk, CT — dB Preamplifier CVREF used Frequency, fi — Hz Output noise voltage, VNO — µV Between FWD/REV Crosstalk, CT — dB Frequency, fi — Hz used Interchannel CT Preamplifier Preamplifier to Supply voltage, VCC — V Supply voltage, VCC — V No.5204-14/18 LA4587M VREF VREF Ripple rejection ratio, SVRR — dB VREF VODC — % VREF — % FWD/REV equivalent Pre + VREF Preamplifier Supply voltage, VCC — V Supply voltage, VCC — V VOUT — fi CVREF Output, VOUT — dBm Output, VOUT — dBm VOUT — VCC VREF CVREF Frequency, fi — Hz Supply voltage, VCC — V VREF — IVREF VREF VREF CVREF VREF — V ro — Ω VREF Supply voltage, VCC — V IVREF — µA Operating output voltage, VoAMSS — mV VO Input on both channels Operating output voltage, VoAMSS — mV VO Pre out. = 6 mV Input H.P. Input on both channels Input on one channel Pre out. = 6 mV Input on one channel Pre-output — Hz Supply voltage, VCC — V No.5204-15/18 Ripple rejection ratio, SVRR — dB Output ripple voltage, VRFO — V Ripple rejection ratio, SVRR — dB Operating output voltage, VoAMSS — mV Pre-output — mV Output ripple current, IRFO IRFO Supply voltage, VCC — V Frequency, fR — Hz Input on both channels Input on one channel — mA Ripple rejection ratio, SVRR — dB Output ripple voltage, VRFO — V Output ripple voltage, VRFO — V Supply voltage, VCC — V Supply voltage, VCC — V Input H.P LA4587M Output ripple voltage, VRFO — V Output ripple voltage, VRFO — V Output ripple current, IRFO VRFO, IRFO Ripple voltage, VR — mV — mA No.5204-16/18 Ripple rejection ratio, SVRR — dB Ripple rejection ratio, SVRR — dB Ripple rejection ratio, SVRR — dB LA4587M fi on Voltage gain, VG — dB Output on both channels Voltage gain, VG — dB When low boost is on on on off When low boost is off Output on both channels VO Frequency, fi — Hz VO Output voltage, VO max — V on Input on both channels Supply voltage, VCC — V PO on Input on both channels Output power, PO — mW Supply voltage, VCC — V VO max — fi Supply voltage, VCC — V PO — fi Output voltage, VO max — V L.B.= on Input on both channels, Load on both channels L.B. + Power Output power, PO — mW L.B. = on Input on both chanels, Load on both channels Frequency, fi — Hz Total harmonic distortion, THD — % Frequency, fi — Hz THD — fi on VODC — V off Input on both channels No filter Supply voltage, VCC — V Frequency, fi — Hz No.5204-17/18 LA4587M fi Output noise voltage, VNO — µV on off Crosstalk, CT — dB on off Frequency, fi — Hz Supply voltage, VCC — V Ripple rejection ratio, SVRR — dB off on Supply voltage, VCC — V No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: 1 Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: 2 Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January 1997. Specifications and information herein are subject to change without notice. No.5204-18/18
LA4587 价格&库存

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