MCH3320

Ordering number : ENN7992 MCH3320 MCH3320 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings Unit --100 ±20 --0.3 --1.2 0.8 150 --55 to +150 V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=--100V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=- 1mA VDS=--10V, ID=- 150mA ID=--150mA, VGS=--10V ID=--150mA, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min typ max Unit V --100 --1 ±10 µA µA V S Ω Ω pF pF pF ns ns ns ns --1.2 0.2 0.45 3.0 3.6 78 6.0 4.0 6.0 3.0 16 16 --2.6 3.9 5.0 Marking : JV Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TB-00000241 No.7992-1/4 MCH3320 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--50V, VGS=--10V, ID=--0.3A VDS=--50V, VGS=--10V, ID=--0.3A VDS=--50V, VGS=--10V, ID=--0.3A IS=--0.3A, VGS=0 Ratings min typ 3.0 0.5 0.5 max Unit nC nC nC --0.87 - 1.2 - V Package Dimensions unit : mm 2167A 0.25 0.3 3 0.15 Switching Time Test Circuit VIN 0V --10V VIN VDD= --50V 2.1 1.6 ID= --150mA RL=333Ω 0.25 0.65 2.0 (Bottom view) 0.07 2 1 PW=10µs D.C.≤1% D VOUT G 3 MCH3320 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) P.G 50Ω S 0.85 SANYO : MCPH3 .0V --6.0V --4. 0V --0.30 ID -- VDS 5V --3 .0V --0.6 ID -- VGS Ta= -25°C 75°C --0.25 --0.5 Drain Current, ID -- A --0.20 --10 --2.5V Drain Current, ID -- A --3 . --0.4 --0.15 --0.3 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 IT07433 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 8 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 7 25 VGS= --2.0V Ta= 7 --0.05 --0.1 5°C °C --25° C --0.10 --0.2 25°C IT06236 120 140 VDS= --10V RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C ID= --0.15A 6 6 5 5 4 4 3 V --4 V S= -10 VG =A, S 15 , VG -0. 5A =0.1 ID =ID 3 2 1 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 2 1 --60 --40 --20 0 20 40 60 80 100 160 Gate-to-Source Voltage, VGS -- V IT06237 Ambient Temperature, Ta -- °C IT06238 No.7992-2/4 MCH3320 3 yfs -- ID VDS= --10V --1.0 7 5 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 Forward Current, IF -- A 1.0 7 5 3 2 3 2 25° C Ta= 5 --2 °C C 75° --0.1 7 5 3 2 Ta=7 5 --0.6 °C 25°C --25° C --0.8 0.1 7 5 --0.01 2 3 5 7 --0.1 2 3 5 --1.0 IT06239 7 --0.01 --0.4 --1.0 --1.2 IT06240 Drain Current, ID -- A 5 3 SW Time -- ID VDD= --50V VGS= --10V td(off) 3 2 100 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 Ciss Ciss, Coss, Crss -- pF 7 5 3 2 10 7 5 3 2 10 7 5 tf td(on) tr 3 2 Coss Crss 1.0 --0.1 2 3 5 7 1.0 Drain Current, ID -- A --10 --1.0 IT06241 3 2 --1.0 7 5 0 --5 --10 --15 --20 --25 --30 IT06242 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --50V ID= --0.3A --8 IDP= --1.2A ID= --0.3A