MCH6613_06

Ordering number : EN6920A MCH6613 SANYO Semiconductors DATA SHEET MCH6613 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 ±10 0.35 1.4 0.8 150 --55 to +150 P-channel -30 ±10 --0.2 --0.8 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 30 1 ±10 0.4 150 220 2.9 3.7 6.4 7.0 5.9 2.3 3.7 5.2 12.8 1.3 V µA µA V mS Ω Ω Ω pF pF pF Symbol Conditions Ratings min typ max Unit Marking : FM Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 52506PE MS IM TB-00002278 / 52101 TS IM TA-3241 No.6920-1/7 MCH6613 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0V VDS=--30V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--100µA VDS=--10V, ID=--50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-1mA, VGS=--1.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--100mA VDS=--10V, VGS=-10V, ID=--100mA VDS=--10V, VGS=-10V, ID=--100mA IS=--100mA, VGS=0V --0.4 80 110 8 11 27 7.5 5.7 1.8 24 55 120 130 1.43 0.18 0.25 --0.83 --1.2 10.4 15.4 54 --30 --1 ±10 --1.4 V µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V Ratings min typ 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7022A-006 2.0 0.15 Electrical Connection 6 0.25 5 4 6 5 4 0 to 0.02 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 2.1 1.6 0.25 1 0.65 2 3 0.3 1 2 3 0.85 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 0.07 6 5 4 No.6920-2/7 MCH6613 Switching Time Test Circuit [N-channel] VDD=15V VIN VIN ID=80mA RL=187.5Ω VIN VIN [P-channel] VDD= --15V ID= --50mA RL=300Ω 4V 0V D VOUT 0V --4V D VOUT PW=10µs D.C.≤1% PW=10µs D.C.≤1% G P.G 50Ω P.G G MCH6613 S 50Ω MCH6613 S 0.16 0.14 0.12 0.10 0.08 ID -- VDS 2. 5V [Nch] --0.10 --0.09 --0.08 ID -- VDS 0V [Pch] --3.5V 2 .0V Drain Current, ID -- A V --4 . --3 .0 V 3.5V 4.0V V 6.0 --2 Drain Current, ID -- A 3.0 .5 V --6.0 --0.07 --0.06 --0.05 --0.04 --0.03 --0.02 V --2.0V VGS=1.5V 0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS= --1.5V --0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 Drain-to-Source Voltage, VDS -- V 0.30 IT00029 ID -- VGS Drain-to-Source Voltage, VDS -- V --0.20 --0.18 --0.16 IT00077 [Nch] --25 °C ID -- VGS [Pch] VDS=10V 0.25 VDS= --10V 25°C Ta= Drain Current, ID -- A Drain Current, ID -- A 75 °C 0.20 --0.14 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02 Ta= 0 --0.5 --1.0 --1.5 --2.0 --2.5 0.10 0.05 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030 0 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V 10 9 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 30 75° 0.15 C --25 °C 25 °C IT00078 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 7 6 25 20 80mA 5 4 15 ID= --30mA 10 --50mA ID=40mA 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS -- V IT00031 Gate-to-Source Voltage, VGS -- V IT00079 No.6920-3/7 MCH6613 10 RDS(on) -- ID [Nch] VGS=4V 100 7 RDS(on) -- ID [Pch] VGS= --4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 3 2 5 Ta=75°C 3 25°C --25°C 10 7 5 3 2 Ta=75°C --25°C 25°C 2 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00032 1.0 --0.01 2 3 5 7 --0.1 2 3 Drain Current, ID -- A 10 RDS(on) -- ID Drain Current, ID -- A 100 7 IT00080 [Nch] VGS=2.5V RDS(on) -- ID [Pch] VGS= --2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 5 Ta=75°C 25°C --25°C Ta=75°C 25°C --25°C 3 10 7 5 3 2 2 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00033 1.0 --0.01 2 3 5 7 --0.1 2 3 Drain Current, ID -- A 100 7 RDS(on) -- ID Drain Current, ID -- A 1000 7 IT00081 [Nch] VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω RDS(on) -- ID [Pch] VGS= --1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 5 3 2 10 7 5 3 2 Ta=75°C --25°C 25°C 100 7 5 3 2 Ta=75°C --25°C 2 3 5 25°C 7 --0.001 2 3 1.0 0.001 2 3 5 7 0.01 2 3 5 IT00034 10 --0.0001 Drain Current, ID -- A 7 Drain Current, ID -- A 18 16 14 12 10 8 6 4 2 --60 IT00082 RDS(on) -- Ta [Nch] RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 5 4 3 V 2.5 S= , VG A V 40m =4.0 I D= , VGS A 80m I D= 0 --3 I D= mA , = -V GS 2.5 V --50 I D= mA , = -V GS 4.0 V 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT00035 Ambient Temperature, Ta -- °C IT00083 No.6920-4/7 MCH6613 1.0 yfs -- ID [Nch] Forward Transfer Admittance, yfs -- S 1.0 7 5 3 2 yfs -- ID [Pch] VDS= --10V Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V 25°C 2 Ta= -- 5°C 75°C 25°C 0.1 7 5 3 2 0.1 7 5 3 2 2 Ta= -- 5°C 75°C 0.01 0.01 2 3 5 7 0.1 2 3 5 IT00036 0.01 --0.01 2 3 5 7 --0.1 2 3 Drain Current, ID -- A 1.0 7 5 IS -- VSD Drain Current, ID -- A 5 3 IT00084 [Nch] VGS=0V IS -- VSD [Pch] VGS=0V Source Current, IS -- A 2 Source Current, IS -- A 3 2 Ta =7 5° C 25 °C --2 5°C --0.1 7 5 3 0.1 7 5 3 2 5°C 25°C --0.7 Ta= 7 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 --0.01 --0.5 --0.6 --25° --0.8 2 C --0.9 --1.0 --1.1 IT00085 Diode Forward Voltage, VSD -- V 1000 7 Diode Forward Voltage, VSD -- V 1000 7 SW Time -- ID Switching Time, SW Time -- ns 3 2 Switching Time, SW Time -- ns 5 [Nch] VDD=15V VGS=4V SW Time -- ID [Pch] VDD= --15V VGS= --4V 5 3 2 td (off) tf tr td(off) tf 100 7 5 3 2 100 7 5 3 2 tr td(on) td(on) 10 0.01 2 3 5 7 0.1 2 IT00038 10 --0.01 2 3 5 7 100 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A [Nch] f=1MHz 100 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A --0.1 IT00086 [Pch] f=1MHz Ciss, Coss, Crss -- pF 3 2 Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 10 7 5 3 Ciss Coss Ciss Coss Crss 2 1.0 Crss 0 --5 --10 --15 --20 --25 --30 IT00087 1.0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT00039 Drain-to-Source Voltage, VDS -- V No.6920-5/7 MCH6613 10 9 VGS -- Qg VDS=10V ID=150mA [Nch] --10 --9 VGS -- Qg VDS= --10V ID= --100mA [Pch] Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC IT00040 Total Gate Charge, Qg -- nC --1.0 7 5 IT00088 ASO 3 2 1.0 [Nch] PW≤10µs ASO IDP= --0.8A 10 1m s [Pch] PW≤10µs IDP=1.4A 1m ID=0.35A 10m s Drain Current, ID -- A Drain Current, ID -- A 7 5 3 2 0.1 7 5 3 2 0.01 s 3 2 ms ID= --0.2A DC 10 op 0m DC Operation in this area is limited by RDS(on). 100 ope rat s n ms --0.1 7 5 3 2 era ion tio Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit 2 3 5 7 --10 2 3 5 IT02878 Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit 2 3 5 7 10 2 3 5 IT02877 Drain-to-Source Voltage, VDS -- V PD -- Ta [Pch, Nch] 1.0 --0.01 --1.0 Drain-to-Source Voltage, VDS -- V 1.0 Allowable Power Dissipation, PD -- W 0.8 M ou nte do 0.6 na ce ram ic bo 0.4 ard (90 0m m2 !0 0.2 .8m m) 1u nit 140 160 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT02879 No.6920-6/7 MCH6613 Note on usage : Since the MCH6613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No.6920-7/7