MCH6628

Ordering number : ENN7919 MCH6628 N-Channel and P-Channel Silicon MOSFETs MCH6628 General-Purpose Switching Device Applications Features • Package Dimensions unit : mm 2173A [MCH6628] 0.25 0.3 4 5 6 0.15 • • The MCH6628 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 2.5V drive. 2.1 1.6 32 0.65 2.0 (Bottom view) 0.25 0.07 1 6 5 4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 1 2 3 (Top view) N-channel 30 ±10 0.35 1.4 0.8 150 P-channel -20 ±10 --1.0 --4.0 Unit V V A A W °C °C --55 to +150 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 30 10 ±10 0.4 130 220 2.9 3.7 6.4 3.7 5.2 12.8 1.3 V µA µA V mS Ω Ω Ω Symbol Conditions Ratings min typ max Unit Marking : WC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 93004 TS IM TA-100978 No.7919-1/6 MCH6628 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--500mA ID=-500mA, VGS=--4V ID=-300mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=--4V, ID=--1A VDS=-10V, VGS=--4V, ID=--1A VDS=-10V, VGS=--4V, ID=--1A IS=--1A, VGS=0 --0.4 0.7 1.2 380 540 115 23 15 8 6 15 7 1.5 0.4 0.3 --0.9 --1.5 500 760 --20 --1 ±10 --1.3 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=150mA VDS=10V, VGS=4V, ID=150mA VDS=10V, VGS=4V, ID=150mA IS=150mA, VGS=0 Ratings min typ 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit [N-channel] VIN 4V 0V VIN PW=10µs D.C.≤1% ID=80mA RL=187.5Ω VDD=15V [P-channel] VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --500mA RL=20Ω VDD= --10V D VOUT D VOUT G G MCH6628 P.G 50Ω MCH6628 P.G 50Ω S S Electrical Connection 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 (Top view) 1 2 3 No.7919-2/6 MCH6628 0.16 0.14 0.12 0.10 0.08 ID -- VDS 2. 5V [Nch] 0.30 ID -- VGS --25 °C VDS=10V [Nch] 3.0 V 3.5V 4.0V V 6.0 2 .0V 0.25 Ta= Drain Current, ID -- A Drain Current, ID -- A 0.15 VGS=1.5V 0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.10 75 °C 0.05 Ta = 0 0 0.5 1.0 --2 5° C 25 °C 1.5 2.0 75 2.5 °C 0.20 25 3.0 IT00030 Drain-to-Source Voltage, VDS -- V 10 9 IT00029 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 10 [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω RDS(on) -- ID °C [Nch] VGS=4V 2 3 5 IT00032 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 8 7 6 5 Ta=75°C 3 80mA 5 ID=40mA 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 25°C --25°C 2 1.0 0.01 2 3 5 7 0.1 Gate-to-Source Voltage, VGS -- V 10 IT00031 RDS(on) -- ID Drain Current, ID -- A 100 7 [Nch] VGS=2.5V RDS(on) -- ID [Nch] VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 3 2 5 Ta=75°C 25°C --25°C 3 10 7 5 3 2 Ta=75°C --25°C 25°C 2 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00033 1.0 0.001 2 3 5 7 0.01 2 3 5 IT00034 Drain Current, ID -- A 7 RDS(on) -- Ta Drain Current, ID -- A 1.0 [Nch] Forward Transfer Admittance, yfs -- S yfs -- ID [Nch] VDS=10V 7 5 3 2 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 25°C 5 4 3 40 I D= 80m I D= ,V mA =2 GS 4.0V S= A, VG .5V Ta= -- 25°C 75°C 0.1 7 5 3 2 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 0.01 0.01 2 3 5 7 0.1 2 3 5 IT00036 IT00035 Drain Current, ID -- A No.7919-3/6 MCH6628 1.0 7 5 IF -- VSD [Nch] VGS=0 Switching Time, SW Time -- ns 1000 7 5 3 2 SW Time -- ID [Nch] VDD=15V VGS=4V Forward Current, IF -- A 3 2 Ta = °C 75 °C td (off) tf tr 25 7 5 3 2 --2 5 °C 0.1 100 7 5 3 2 td(on) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 10 0.01 2 3 5 7 0.1 2 IT00038 100 7 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Drain Current, ID -- A 10 9 [Nch] f=1MHz Gate-to-Source Voltage, VGS -- V VGS -- Qg [Nch] VDS=10V ID=150mA 8 7 6 5 4 3 2 1 Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 1.0 0 2 4 6 8 10 12 14 16 18 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V IT00039 Total Gate Charge, Qg -- nC IT00040 ASO [Nch] 100µs 1m s 3 2 1.0 IDP=1.4A Drain Current, ID -- A 7 5 3 2 0.1 7 5 3 2 0.01 ID=0.35A 10m s DC Operation in this area is limited by RDS(on). 100 ope ms ion rat Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit 2 3 5 7 10 2 3 5 IT02877 1.0 Drain-to-Source Voltage, VDS -- V --1.0 ID -- VDS 0V 5V --2 . [Pch] --2.0 ID -- VGS Ta =-25 °C 25 °C 75 °C 1.0 [Pch] --4. 0V VDS= --10V --1.8 --1.6 --0.8 Drain Current, ID -- A --3 . --0.9 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 . --2 0V Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 VGS= --1.5V --0.4 --0.2 0 --0.6 --0.7 --0.8 --0.9 --1.0 0 0.5 25 1.5 75 °C °C --25 °C 2.0 --0.6 Ta = 2.5 3.0 IT03369 Drain-to-Source Voltage, VDS -- V IT03368 Gate-to-Source Voltage, VGS -- V No.7919-4/6 MCH6628 1000 RDS(on) -- VGS [Pch] Ta=25°C 1000 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 IT03370 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 ID= --0.3A --0.5A I D= A, --0.3 = --2 VGS .5V 0.5 I D= -- = --4.0 A, V GS V Gate-to-Source Voltage, VGS -- V 3 yfs -- ID Ambient Temperature, Ta -- °C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IT03371 [Pch] VDS= --10V IF -- VSD Forward Transfer Admittance, yfs -- S [Pch] VGS=0 2 1.0 7 5 25° C Ta= --25 °C C 75° 3 2 Forward Current, IF -- A 0.1 --0.01 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A 3 2 7 --1.0 IT03372 --0.01 --0.2 --0.3 --0.4 --0.5 Ta= 75 --0.6 25°C --25°C --0.7 --0.8 --0.9 °C --1.0 --1.1 --1.2 SW Time -- ID [Pch] 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT03373 [Pch] f=1MHz VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 100 7 5 Ciss 100 7 5 2 10 7 5 3 2 1.0 --0.1 td(off) td(on) tf tr 3 3 2 Coss Crss 10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT03374 Drain-to-Source Voltage, VDS -- V --10 7 5 3 2 IT03375 VGS -- Qg [Pch] ASO [Pch]