2SA1709S-AN

Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor http://onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)120 (--)100 V VEBO IC (--)6 V (--)2 A (--)3 A Collector Dissipation ICP PC 1 W Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7540-001 • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs./box 2.5 6.9 1.05 2SA1709S-AN 2SA1709T-AN 2SC4489S-AN 2SC4489T-AN 1.0 4.5 1.0 1.45 Marking(NMP(Taping)) A1709 RANK C4489 LOT No. RANK LOT No. 0.6 1.0 0.5 15.0 0.9 1 2.54 2 3 0.45 2.54 1 : Emitter 2 : Collector 3 : Base NMP(Taping) Electrical Connection 2 3 2 3 1 2SA1709 Semiconductor Components Industries, LLC, 2013 September, 2013 1 2SC4489 82912 TKIM TC-00002803/40804TN(PC)/5169MO, TS No.3096-1/7 2SA1709 / 2SC4489 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)100mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time min typ Unit max 140* (--)100 nA (--)100 nA 400* VCE=(--)10V, IC=(--)100mA V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Ratings Conditions 120 MHz (25)16 pF (--0.22)0.13 (--0.6)0.4 V (--)0.85 (--)1.2 V IC=(--)1A, IB=(--)100mA IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V 80 ns (750)1000 ns (40)50 ns * : The 2SA1709/2SC4489 are classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit 2SA1709 2SC4489 IB1 IB2 PW=20μs D.C.≤1% VR RB 100μF PW=20μs D.C.≤1% RL + + 50Ω IB2 OUTPUT INPUT IB1 RB VR + + 50Ω 470μF VBE=5V OUTPUT INPUT 100μF 470μF VBE= --5V VCC= --50V IC=10IB1= --10IB2= --0.7A RL VCC=50V IC=10IB1= --10IB2=0.7A Ordering Information Package Shipping 2SA1709S-AN Device NMP(Taping) 2,500pcs./bag 2SA1709T-AN NMP(Taping) 2,500pcs./bag 2SC4489S-AN NMP(Taping) 2,500pcs./bag 2SC4489T-AN NMP(Taping) 2,500pcs./bag IC -- VCE 2SA1709 A A --1.6 0 --3 0m --4 IC -- VCE 2SC4489 A 50m A --20m 0m --5 --10mA --1.2 Pb Free 2.0 mA Collector Current, IC -- A Collector Current, IC -- A --2.0 memo --0.8 --5mA --0.4 --3mA --2mA 1.6 20mA 1.2 10mA 5mA 0.8 3mA 2mA 0.4 --1mA 0 0 1mA IB=0A --1 --2 --3 --4 Collector-to-Emitter Voltage, VCE -- V 40mA 30mA --5 ITR04340 0 IB=0A 0 1 2 3 4 Collector-to-Emitter Voltage, VCE -- V 5 ITR04341 No.3096-2/7 2SA1709 / 2SC4489 IC -- VCE A --5mA --4mA --0.8 Collector Current, IC -- A Collector Current, IC -- A --6m --3mA --0.6 IC -- VCE 1.0 2SA1709 .5mA 5.0 mA --1.0 --2mA --0.4 --1mA --0.2 4 2SC4489 4.0mA 3.5mA 0.8 3.0mA 0.6 2.5mA 2.0mA 0.4 1.5mA 1.0mA 0.2 0.5mA 0 0 IB=0A --10 --20 --30 --40 0 --50 IB=0A 0 10 Collector-to-Emitter Voltage, VCE -- V ITR04342 IC -- VBE Collector Current, IC -- A 75°C 25°C --25°C Ta= Collector Current, IC -- A --1.2 --0.4 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0.8 0 --1.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 2SC4489 VCE=5V 7 5 1.2 ITR04345 hFE -- IC 1000 2SA1709 VCE= --5V 7 0.2 ITR04344 hFE -- IC 1000 5 DC Current Gain, hFE DC Current Gain, hFE 1.2 0 0 Ta=75°C 25°C --25°C 3 2 100 7 3 2 Ta=75°C 25°C --25°C 100 7 5 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 3 5 Collector Current, IC -- A 7 --1.0 2 3 ITR04348 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A Gain-Bandwidth Product, f T -- MHz 2SA1709 VCE= --10V 2 2 2 3 ITR04347 f T -- IC 3 2 7 --0.01 3 7 0.01 3 ITR04346 f T -- IC 3 Gain-Bandwidth Product, f T -- MHz 1.6 0.4 0 10 50 2SC4489 VCE=5V 2.0 --1.6 --0.8 40 IC -- VBE 2.4 2SA1709 VCE= --5V --2.0 30 Ta=7 5°C 25°C --25°C --2.4 20 Collector-to-Emitter Voltage, VCE -- V ITR04343 2SC4489 VCE=10V 2 100 7 5 3 2 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR04349 No.3096-3/7 2SA1709 / 2SC4489 Cob -- VCB 100 Output Capacitance, Cob -- pF 5 3 2 10 7 5 3 7 --1.0 2 3 5 7 --10 2 3 5 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 C 25° 5 C Ta=75° 3 2 --10 --25°C 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 --1.0 3 Ta= --25°C 7 --0.01 2 25°C 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 5 3 2 IC=2.0A 2 0m s 1.0 5 DC 3 op era 2 tio n 0.1 5 3 2 0.01 5 3 Single pulse Ta=25°C (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 10 2 3 5 3 5 Collector-to-Emitter Voltage, VCE -- 7 2 10 3 5 7 100 2 V ITR04356 7 100 2 ITR04351 VCE(sat) -- IC 2SC4489 IC / IB=10 7 5 3 2 100 7 5 25°C Ta=75°C 3 --25°C 2 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR04353 VBE(sat) -- IC 2SC4489 IC / IB=10 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 3 2SA1709 / 2SC4489 10 1m ms s 10 2 1.0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A ITR04354 ASO ICP=3.0A 7 7 3 75°C 5 10 3 5 5 7 10 7 Collector Current, IC -- A 2 2SA1709 IC / IB=10 7 10 ITR04352 VBE(sat) -- IC --10 2 1000 2SA1709 IC / IB=10 7 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 5 3 7 --100 2 V ITR04350 Collector-to-Base Voltage, VCB -- 2SC4489 f=1MHz 7 PC -- Ta 1.2 2 3 ITR04355 2SA1709 / 2SC4489 Collector Dissipation, PC -- W Output Capacitance, Cob -- pF 7 Cob -- VCB 100 2SA1709 f=1MHz 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- ∞C 140 160 ITR04357 No.3096-4/7 2SA1709 / 2SC4489 Bag Packing Specification 2SA1709S-AN, 2SA1709T-AN, 2SC4489S-AN, 2SC4489T-AN No.3096-5/7 2SA1709 / 2SC4489 Outline Drawing 2SA1709S-AN, 2SA1709T-AN, 2SC4489S-AN, 2SC4489T-AN Mass (g) Unit 0.275 mm * For reference No.3096-6/7 2SA1709 / 2SC4489 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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