MCH6336-TL-E

MCH6336 Power MOSFET –12V, 43mΩ, –5A, Single P-Channel Features • Low On-Resistance • 1.8V Drive • High Speed Switching • ESD Diode-Protected Gate • Pb-Free and RoHS Compliance • Halogen Free Compliance : MCH6336-TL-H, MCH6336-TL-W www.onsemi.com VDSS RDS(on) Max 43mΩ@ −4.5V ID Max −12V 66mΩ@ −2.5V −5A 98mΩ@ −1.8V Electrical Connection P-Channel Specifications 1, 2, 5, 6 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS −12 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −5 A −20 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 3 4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Power Dissipation 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C (1200mm2 × 0.8mm) Packing Type : TL LOT No. Thermal Resistance Ratings Parameter Symbol Value Unit Marking YK LOT No. PD When mounted on ceramic substrate TL Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm) RθJA 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2 1 Publication Order Number : MCH6336/D MCH6336 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ max −12 Unit Drain to Source Breakdown Voltage V(BR)DSS ID=−1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=−12V, VGS=0V −10 μA Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=−6V, ID=−1mA −1.4 V Forward Transconductance gFS VDS=−6V, ID=−3A RDS(on)1 ID=−3A, VGS=−4.5V 33 43 mΩ RDS(on)2 ID=−1.5A, VGS=−2.5V 47 66 mΩ RDS(on)3 ID=−0.5A, VGS=−1.8V 68 98 mΩ Static Drain to Source On-State Resistance V −0.4 4.8 8.1 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time td(off) Fall Time tf 69 ns Total Gate Charge Qg 6.9 nC Gate to Source Charge Qgs 1.2 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD 660 pF 210 pF Crss 155 pF td(on) 7.4 ns tr 57 ns 72 ns VDS=−6V, f=1MHz See specified Test Circuit VDS=−6V, VGS=−4.5V, ID=−5A 1.8 IS=−5A, VGS=0V −0.83 nC −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VIN D VOUT PW=10μs D.C.≤1% G MCH6336 P.G 50Ω S www.onsemi.com 2 MCH6336 www.onsemi.com 3 MCH6336 www.onsemi.com 4 MCH6336 Package Dimensions MCH6336-TL-E / MCH6336-TL-H / MCH6336-TL-W MCPH6 CASE 419AS ISSUE O unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device Package Shipping MCPH6 SC-88FL,SC-70-6,SOT-363 3,000 pcs. / Tape & Reel Note Pb-Free MCH6336-TL-E MCH6336-TL-H MCH6336-TL-W Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6336 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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